Abstract:
A memory device includes: a first clock receiver configured to receive a first clock signal; a second clock receiver configured to receive a second clock signal when data is input or output, wherein the second clock signal has a first clock frequency in a preamble period, and has a second clock frequency different from the first clock frequency after the preamble period; a command decoder configured to receive a clock synchronization command synchronized with the first clock signal and generate a clock synchronization signal, wherein the clock synchronization signal is generated during the preamble period; and a clock synchronizing circuit configured to generate a plurality of division clock signals in response to the second clock signal, latch the clock synchronization signal during the preamble period, and selectively provide the plurality of division clock signals as internal data clock signals according to a result of the latching.
Abstract:
A memory device includes: a first clock receiver configured to receive a first clock signal; a second clock receiver configured to receive a second clock signal when data is input or output, wherein the second clock signal has a first clock frequency in a preamble period, and has a second clock frequency different from the first clock frequency after the preamble period; a command decoder configured to receive a clock synchronization command synchronized with the first clock signal and generate a clock synchronization signal, wherein the clock synchronization signal is generated during the preamble period; and a clock synchronizing circuit configured to generate a plurality of division clock signals in response to the second clock signal, latch the clock synchronization signal during the preamble period, and selectively provide the plurality of division clock signals as internal data clock signals according to a result of the latching.
Abstract:
An operating method of a memory device includes entering into a command bus training mode, generating a plurality of internal clock signals by dividing a received clock signal, generating a plurality of internal chip selection signals by latching a received chip selection signal according to the plurality of internal clock signals, generating a second command/address signal by encoding a received first command/address signal based on the plurality of internal chip selection signals, and outputting the second command/address signal.
Abstract:
An impedance calibration circuit includes a first code generator, a first code storing circuit, a second code generator and a second code storing circuit. The first code generator generates a pull-up control code obtained from a result of comparing a target output high level (VOH) voltage with a first voltage of a first node. The first code storing circuit stores the pull-up control code when the target VOH voltage becomes the same as the first voltage. The second code generator generates a pull-down control code obtained from a result of comparing the VOH voltage with a second voltage of a second node. The second storing circuit stores the pull-down control code when the target VOH voltage becomes the same as the second voltage. The first code storing circuit and the second code storing circuit store pull-up control code and pull-down control code pairs respectively.
Abstract:
A memory device includes: a first clock receiver configured to receive a first clock signal; a second clock receiver configured to receive a second clock signal when data is input or output, wherein the second clock signal has a first clock frequency in a preamble period, and has a second clock frequency different from the first clock frequency after the preamble period; a command decoder configured to receive a clock synchronization command synchronized with the first clock signal and generate a clock synchronization signal, wherein the clock synchronization signal is generated during the preamble period; and a clock synchronizing circuit configured to generate a plurality of division clock signals in response to the second clock signal, latch the clock synchronization signal during the preamble period, and selectively provide the plurality of division clock signals as internal data clock signals according to a result of the latching.
Abstract:
A memory device includes: a first clock receiver configured to receive a first clock signal; a second clock receiver configured to receive a second clock signal when data is input or output, wherein the second clock signal has a first clock frequency in a preamble period, and has a second clock frequency different from the first clock frequency after the preamble period; a command decoder configured to receive a clock synchronization command synchronized with the first clock signal and generate a clock synchronization signal, wherein the clock synchronization signal is generated during the preamble period; and a clock synchronizing circuit configured to generate a plurality of division clock signals in response to the second clock signal, latch the clock synchronization signal during the preamble period, and selectively provide the plurality of division clock signals as internal data clock signals according to a result of the latching.
Abstract:
An electronic device and method for providing a communication service are provided. The method of operating an electronic device includes: receiving a first signal transmitted through a first band and a second signal transmitted through a second band; determining a communication mode of the electronic device for processing the first signal and the second signal based on device information or environment information of the electronic device; and processing the first signal and the second signal using at least one of a first modem or a second modem functionally connected to the electronic device based on the communication mode, wherein the processing of the first signal and the second signal includes: processing, when the communication mode is a first mode, the first signal in the first modem and the second signal in the second modem; and processing, when the communication mode is a second mode, the first signal and the second signal in the first modem.
Abstract:
An apparatus and method for providing an LTE service in an electronic device. The method includes: transmitting or receiving a voice signal through a first antenna and a data signal through a second antenna when the electronic device provides a multi-communication service. At least one switch connects at least one antenna and at least one communication interface with each other. When the electronic device provides a single communication service, transmitting or receiving a data signal or a voice signal through the first antenna, using the at least one switch.
Abstract:
An electronic device and method for providing a communication service are provided. The method of operating an electronic device includes: receiving a first signal transmitted through a first band and a second signal transmitted through a second band; determining a communication mode of the electronic device for processing the first signal and the second signal based on device information or environment information of the electronic device; and processing the first signal and the second signal using at least one of a first modem or a second modem functionally connected to the electronic device based on the communication mode, wherein the processing of the first signal and the second signal includes: processing, when the communication mode is a first mode, the first signal in the first modem and the second signal in the second modem; and processing, when the communication mode is a second mode, the first signal and the second signal in the first modem.
Abstract:
A memory interface circuit is provided, comprising: a first signal output circuit configured to output a first signal via a first signal line to a first I/O terminal; a second signal output circuit configured to output a second signal via a second signal line to a second I/O terminal; and a noise cancellation circuit having at least one phase adjusting element and at least one gain adjusting element to reduce a noise signal induced on the second signal line due to the presence of the first signal on the first signal line, wherein the second signal line is disposed adjacent to the first signal line.