公开(公告)号：US11750221B1

公开(公告)日：2023-09-05

申请号：US17706179

申请日：2022-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ariel Doubchak ,  Avner Dor ,  Yaron Shany ,  Tal Philosof ,  Yoav Shereshevski ,  Amit Berman

IPC: G06F11/00 ,  G06F11/30 ,  G08C25/00 ,  H03M13/00 ,  H04L1/00 ,  H03M13/11

CPC classification number: H03M13/1174 ,  H03M13/1108 ,  H03M13/616

Abstract: A method of correcting data stored in a memory device includes: applying an iterative decoder to the data; determining a total number of rows in first data the decoder attempted to correct; estimating first visible error rows among the total number that continue to have an error after the attempt; estimating residual error rows among the total number that no longer have an error after the attempt; determining second visible error rows in second data of the decoder that continue to have an error by permuting indices of the residual error rows according to a permutation; and correcting the first data using the first visible error rows.

公开(公告)号：US12143123B2

公开(公告)日：2024-11-12

申请号：US18358660

申请日：2023-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ariel Doubchak ,  Avner Dor ,  Yaron Shany ,  Tal Philosof ,  Yoav Shereshevski ,  Amit Berman

IPC: H03M13/11 ,  H03M13/00

Abstract: A method of correcting data stored in a memory device includes: applying an iterative decoder to the data; determining a total number of rows in first data the decoder attempted to correct; estimating first visible error rows among the total number that continue to have an error after the attempt; estimating residual error rows among the total number that no longer have an error after the attempt; determining second visible error rows in second data of the decoder that continue to have an error by permuting indices of the residual error rows according to a permutation; and correcting the first data using the first visible error rows.

公开(公告)号：US09792176B2

公开(公告)日：2017-10-17

申请号：US14941051

申请日：2015-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Evgeny Blaichman ,  Moshe Twitto ,  Avner Dor ,  Elona Erez ,  Jun Jin Kong ,  Shay Landis ,  Yaron Shany ,  Yoav Shereshevski

IPC: G06F11/10 ,  G06F3/06 ,  G11C29/52 ,  H03M13/15

CPC classification number: G06F11/1068 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0653 ,  G06F3/0679 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/0411 ,  H03M13/09 ,  H03M13/098 ,  H03M13/1102 ,  H03M13/1515 ,  H03M13/152 ,  H03M13/23 ,  H03M13/2906 ,  H03M13/2909 ,  H03M13/2927 ,  H03M13/2948 ,  H03M13/2957 ,  H03M13/3707 ,  H03M13/455

Abstract: A memory system includes a memory controller; and a memory device, the memory device including a memory cell array, the memory cell array including least a first memory page having a plurality of memory cells storing a plurality of stored bits, the memory controller being such that, the memory controller performs a first hard read operation on the first memory page to generate a plurality of read bits corresponding to the plurality of stored bits, and if the memory controller determines to change a value of one of a first group of bits, from among the plurality of read bits, the memory controller selects one of the first group of bits based on log likelihood ratio (LLR) values corresponding, respectively, to each of the first group of bits, and changes the value of the selected bit.

公开(公告)号：US20230308115A1

公开(公告)日：2023-09-28

申请号：US17706179

申请日：2022-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ariel DOUBCHAK ,  Avner Dor ,  Yaron Shany ,  Tal Philosof ,  Yoav Shereshevski ,  Amit Berman

IPC: H03M13/11 ,  H03M13/00

CPC classification number: H03M13/1174 ,  H03M13/1108 ,  H03M13/616

Abstract: A method of correcting data stored in a memory device includes: applying an iterative decoder to the data; determining a total number of rows in first data the decoder attempted to correct; estimating first visible error rows among the total number that continue to have an error after the attempt; estimating residual error rows among the total number that no longer have an error after the attempt; determining second visible error rows in second data of the decoder that continue to have an error by permuting indices of the residual error rows according to a permutation; and correcting the first data using the first visible error rows.

公开(公告)号：US09202576B2

公开(公告)日：2015-12-01

申请号：US14211077

申请日：2014-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoav Shereshevski ,  Avner Dor ,  Shmuel Dashevsky ,  Jun Jin Kong ,  Pil Sang Yoon

IPC: G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3459

Abstract: A method of programming a non-volatile memory device includes; defining a set of verification voltages, setting a maximum verification voltage among verification voltages that are less than or equal to a first target programming voltage to be a target verification voltage, calculating a number of extra pulses based on the target verification voltage and the first target programming voltage, verifying whether a threshold voltage of the memory cell is equal to or greater than the target verification voltage by applying an incremental step pulse program (ISPP) pulse to the memory cell and then applying at least one verification voltage in the set of verification voltages to the memory cell, and further applying the ISPP pulse to the memory cell a number of times equal to the number of extra pulses when the threshold voltage is verified to be equal to or greater than the target verification voltage.

Abstract translation: 非易失性存储器件的编程方法包括： 定义一组验证电压，将小于或等于第一目标编程电压的验证电压之间的最大验证电压设置为目标验证电压，基于目标验证电压和第一目标计算额外脉冲数 编程电压，通过向存储单元施加增量步进脉冲程序（ISPP）脉冲，然后在验证集合中施加至少一个验证电压来验证存储器单元的阈值电压是否等于或大于目标验证电压 并且当阈值电压被验证为等于或大于目标验证电压时，进一步将ISPP脉冲施加到存储器单元等于额外脉冲数的次数。