公开(公告)号：US12125942B2

公开(公告)日：2024-10-22

申请号：US17352708

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjo Tak ,  Joosung Kim ,  Jonguk Seo ,  Sungjin Ahn ,  Donggun Lee ,  Jeongwook Lee ,  Youngjin Choi ,  Yongseok Choi ,  Jonghoon Ha

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/14 ,  H01L33/385 ,  H01L33/44

Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.

公开(公告)号：US20240021756A1

公开(公告)日：2024-01-18

申请号：US18222223

申请日：2023-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjin Choi ,  Donggun Lee ,  Punjae Choi

IPC: H01L33/32 ,  H01L33/12 ,  H01L33/06

CPC classification number: H01L33/325 ,  H01L33/12 ,  H01L33/06

Abstract: A nitride semiconductor light emitting device includes an active layer provided between P-type and N-type nitride semiconductor layers, a first strain reducing layer including first InGaN films and first GaN films alternately stacked between the N-type nitride semiconductor layer and the active layer, and a second strain reducing layer including a second InGaN film and a second GaN film alternately stacked between the first strain reducing layer and the active layer. The active layer includes an InGaN well layer, a barrier layer, an AlGaN layer between the InGaN well layer and the barrier layer, and an intermediate lattice layer between the InGaN well layer and the AlGaN layer The intermediate lattice layer including a nitride single crystal having a lattice larger than a first lattice of the InGaN well layer and smaller than a second lattice of the AlGaN layer.

公开(公告)号：US20240021145A1

公开(公告)日：2024-01-18

申请号：US18222155

申请日：2023-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donggun Lee ,  Punjae Choi ,  Youngjin Choi

IPC: G09G3/32

CPC classification number: G09G3/32 ,  G09G2300/0842 ,  G09G2320/0633 ,  G09G2320/0247

Abstract: A display apparatus includes a display panel including a plurality of pixels each having red, green, and blue LEDs; a display panel driver applying a current to each of the LEDs; a memory storing current intensity information according to target luminance of each of the LEDs; and a processor controlling the display panel driver to apply a current to each of the LEDs based on the current intensity information, wherein the processor is configured to control the display panel driver to apply an additional current to the green LED when a target luminance of the red LED is smaller than a predetermined luminance.

公开(公告)号：US11784285B2

公开(公告)日：2023-10-10

申请号：US17022496

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjin Choi ,  Joosung Kim ,  Jonguk Seo ,  Sungjin Ahn ,  Donggun Lee ,  Jeongwook Lee ,  Yongseok Choi ,  Youngjo Tak ,  Jonghoon Ha

IPC: H01L33/20 ,  H01L33/38 ,  H01L27/15 ,  H01L33/42 ,  H01L21/02 ,  H01L33/12

CPC classification number: H01L33/20 ,  H01L27/156 ,  H01L33/387 ,  H01L33/42 ,  H01L21/0254 ,  H01L33/12

Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.

公开(公告)号：US20240021751A1

公开(公告)日：2024-01-18

申请号：US18222296

申请日：2023-07-14

Applicant: SAMSUNG ELECTRONICS CO,. LTD.

Inventor： Jihye Yeon ,  Hankyu Seong ,  Sunghyun Sim ,  Donggun Lee ,  Youngjin Choi

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/08

CPC classification number: H01L33/0093 ,  H01L33/06 ,  H01L33/08 ,  H01L33/325

Abstract: A method of manufacturing an LED module includes forming a first conductivity-type semiconductor base layer on a growth substrate; forming a mask pattern having first to third openings on the first conductivity-type semiconductor base layer, wherein the mask pattern the first to the third openings having different widths and arranged with a same pitch; simultaneously forming first to third light emitting laminates in the first to third openings, respectively; removing the mask pattern from the first conductivity-type semiconductor base layer; and removing an edge region of each of the first to third light emitting laminates, wherein first to third light emitting laminates include a first to third active layers configured to emit light of different wavelengths, respectively.

公开(公告)号：US12027107B2

公开(公告)日：2024-07-02

申请号：US18222155

申请日：2023-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donggun Lee ,  Punjae Choi ,  Youngjin Choi

IPC: G09G3/32

CPC classification number: G09G3/32 ,  G09G2300/0842 ,  G09G2320/0247 ,  G09G2320/0633

Abstract: A display apparatus includes a display panel including a plurality of pixels each having red, green, and blue LEDs; a display panel driver applying a current to each of the LEDs; a memory storing current intensity information according to target luminance of each of the LEDs; and a processor controlling the display panel driver to apply a current to each of the LEDs based on the current intensity information, wherein the processor is configured to control the display panel driver to apply an additional current to the green LED when a target luminance of the red LED is smaller than a predetermined luminance.