-
公开(公告)号：US08252164B2
公开(公告)日：2012-08-28
申请号：US13113680
申请日：2011-05-23
申请人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号： C25D13/02
CPC分类号： H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。
-
公开(公告)号：US07968474B2
公开(公告)日：2011-06-28
申请号：US11979949
申请日：2007-11-09
申请人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X. Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号： H01L21/71
CPC分类号： H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。
-
公开(公告)号：US20080224123A1
公开(公告)日：2008-09-18
申请号：US11979949
申请日：2007-11-09
申请人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人： Samuel Martin , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
IPC分类号： H01L31/00 , H01L21/326
CPC分类号： H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。
-
公开(公告)号：US20110284380A1
公开(公告)日：2011-11-24
申请号：US13113680
申请日：2011-05-23
申请人： Samuel MARTIN , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
发明人： Samuel MARTIN , Xiangfeng Duan , Katsumasa Fujii , James M. Hamilton , Hiroshi Iwata , Francisco Leon , Jeffrey Miller , Tetsu Negishi , Hiroshi Ohki , J. Wallace Parce , Cheri X.Y. Pereira , Paul John Schuele , Akihide Shibata , David P. Stumbo , Yasunobu Okada
CPC分类号： H01L29/0665 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0673 , Y10S977/883
摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.
摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。
-
5.发明授权公开(公告)号：US08129768B2
公开(公告)日：2012-03-06
申请号：US11802706
申请日：2007-05-24
IPC分类号： H01L29/772
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/823807 , H01L27/092 , H01L27/15 , H01L29/0673 , H01L29/78654 , H01L29/78681 , H01L29/78684 , H01L29/78696 , Y10S977/762 , Y10S977/781 , Y10S977/789
摘要： An integrated circuit device of the present invention includes a substrate on which at least two types of nano wire element are provided. These nano wire elements have functions and materials different from each other. The nano wire elements are constituted by nano wires having sizes differing depending on types of nano wire element. With this, it is possible to dramatically improve a function of the integrated circuit device, as compared with an integrated circuit device including a substrate on which one type of nano wire element is provided.
摘要翻译： 本发明的集成电路器件包括其上提供至少两种类型的纳米线元件的衬底。 这些纳米线元件具有彼此不同的功能和材料。 纳米线元件由具有与纳米线元件的类型不同的尺寸的纳米线构成。 与包括其上提供有一种类型的纳米线元件的基板的集成电路器件相比，可以显着地提高集成电路器件的功能。
-
6.发明申请公开(公告)号：US20080042120A1
公开(公告)日：2008-02-21
申请号：US11802706
申请日：2007-05-24
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/823807 , H01L27/092 , H01L27/15 , H01L29/0673 , H01L29/78654 , H01L29/78681 , H01L29/78684 , H01L29/78696 , Y10S977/762 , Y10S977/781 , Y10S977/789
摘要： An integrated circuit device of the present invention includes a substrate on which at least two types of nano wire element are provided. These nano wire elements have functions and materials different from each other. The nano wire elements are constituted by nano wires having sizes differing depending on types of nano wire element. With this, it is possible to dramatically improve a function of the integrated circuit device, as compared with an integrated circuit device including a substrate on which one type of nano wire element is provided.
摘要翻译： 本发明的集成电路器件包括其上提供至少两种类型的纳米线元件的衬底。 这些纳米线元件具有彼此不同的功能和材料。 纳米线元件由具有与纳米线元件的类型不同的尺寸的纳米线构成。 与包括其上提供有一种类型的纳米线元件的基板的集成电路器件相比，可以显着地提高集成电路器件的功能。
-
公开(公告)号：US6140189A
公开(公告)日：2000-10-31
申请号：US248630
申请日：1999-02-11
IPC分类号： H01L29/78 , H01L21/8234 , H01L27/02 , H01L27/088 , H01L21/336
CPC分类号： H01L27/0266 , Y10S438/981
摘要： A MOS transistor having a multilevel gate oxide layer is provided for use in an ESD protection circuit. A thick gate oxide layer near the drain insures that the transistor has a relatively large drain to gate breakdown voltage. A thin gate oxide layer near the source permits the gate voltage to turn the transistor on and off with rapid switching speeds. The thick portion of the MOS transistor multilevel gate oxide layer is formed with a local oxidation of silicon (LOCOS) process, while the thin gate layer is formed in a separate step. An ESD protection circuit and method for fabricating the above-mentioned multilevel gate oxide layer MOS transistor are also provided.
摘要翻译： 提供具有多电平栅氧化层的MOS晶体管用于ESD保护电路中。 在漏极附近的厚栅极氧化层确保晶体管具有相对较大的漏极到栅极击穿电压。 靠近源极的薄栅极氧化层允许栅极电压以快速的开关速度开启和关闭晶体管。 MOS晶体管多电平栅极氧化物层的厚部分由硅（LOCOS）工艺的局部氧化形成，而薄栅极层在单独的步骤中形成。 还提供了用于制造上述多电平栅极氧化物层MOS晶体管的ESD保护电路和方法。
-
8.发明授权Semiconductor device with NMOS including Si:C channel region and/or PMOS including SiGe channel region 失效具有NMOS的半导体器件包括Si：C沟道区和/或包括SiGe沟道区的PMOS公开(公告)号：US06774409B2
公开(公告)日：2004-08-10
申请号：US10092729
申请日：2002-03-08
申请人： Tomoya Baba , Katsumasa Fujii , Akiyoshi Mutou
发明人： Tomoya Baba , Katsumasa Fujii , Akiyoshi Mutou
IPC分类号： H01L218234
CPC分类号： H01L21/823807 , H01L27/0922 , H01L29/1054
摘要： A semiconductor device comprises: a semiconductor substrate on which a silicon germanium film, a carbon-containing silicon film and a silicon film are formed in this order and a gate electrode on the semiconductor substrate with intervention of a gate oxide film, wherein a channel region of the semiconductor device the is formed in the carbon-containing silicon film or wherein a channel region of the semiconductor device is formed in the silicon germanium film.
摘要翻译： 半导体器件包括：半导体衬底，其上依次形成硅锗膜，含碳硅膜和硅膜，并且在半导体衬底上形成栅电极，其中介入了栅氧化膜，其中沟道区 的半导体器件形成在含碳硅膜中，或者其中半导体器件的沟道区形成在硅锗膜中。
-
公开(公告)号：US06524893B2
公开(公告)日：2003-02-25
申请号：US10002108
申请日：2001-12-05
申请人： Hidechika Kawazoe , Eiji Aoki , Sheng Teng Hsu , Katsumasa Fujii
发明人： Hidechika Kawazoe , Eiji Aoki , Sheng Teng Hsu , Katsumasa Fujii
IPC分类号： H01L21332
CPC分类号： H01L27/0262 , H01L27/0248 , H01L27/0259 , H01L29/7412
摘要： An electrostatic discharge protection device according to the present invention is provided at an input or an output of a semiconductor integrated circuit for protecting an internal circuit of the semiconductor integrated circuit from an electrostatic surge flowing into or out of the semiconductor integrated circuit. The electrostatic discharge protection device includes: a thyristor; and a trigger diode for triggering the thyristor with a low voltage. The trigger diode includes: an n-type cathode high impurity concentration region; a p-type anode high impurity concentration region; and an insulator section for electrically insulating a silicide layer formed on a surface of the n-type cathode high impurity concentration region from another silicide layer formed on a surface of the p-type anode high impurity concentration region.
-
公开(公告)号：US4686974A
公开(公告)日：1987-08-18
申请号：US904021
申请日：1986-09-02
CPC分类号： A61M16/00 , A61M16/0677 , A61M2016/0021
摘要： Steady insufflation of a gas starts before the beginning of each inhalation, and a pulse-like peak flow insufflation of the gas is superposed on the steady insufflation for a short period of times at the beginning of the inhalation, and the steady insufflation is terminated before the end of the inhalation, so as to improve the inhalation efficiency of insufflated gas extremely.
摘要翻译： 在每次吸入开始之前，气体的稳定吹气开始，并且在吸入开始时，气体的脉冲状峰值流量吹入在持续吹入时间较短的时间段内叠加，并且稳定吹气在 吸入结束，极大地提高吸入气体的吸入效率。
-
-
-
-
-
-
-
-
-
搜索结果
18 条记录 (耗时 0.058 秒)