SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING FINE STRUCTURE ARRANGING SUBSTRATE, AND DISPLAY ELEMENT
    5.
    发明申请
    SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING FINE STRUCTURE ARRANGING SUBSTRATE, AND DISPLAY ELEMENT 审中-公开
    半导体元件,制造微结构基板的方法和显示元件

    公开(公告)号:US20110058126A1

    公开(公告)日:2011-03-10

    申请号:US12867725

    申请日:2009-02-10

    摘要: With reference to a direction perpendicular to a direction of forming electrodes to which a voltage can be applied, fine structures are each arranged within ±5 degrees at a substantially even interval, and a semiconductor element is formed by using the fine structures. On an insulating substrate, at least two electrodes are arranged at a predetermined interval, and there are formed one or more fine structure arranging regions, each of which is formed by a unit of the two electrodes. A semiconductor element electrode is made in contact with the plurality of the fine structures, each having two ends in contact with the two electrodes and a length in a longitudinal direction of a nano order to a micron order, and arranged within ±5 degrees with reference to the direction perpendicular to the direction of forming the electrodes.

    摘要翻译: 关于与形成可施加电压的电极的方向垂直的方向,精细结构以基本上均匀的间隔布置在±5度内,并且通过使用精细结构形成半导体元件。 在绝缘基板上,至少两个电极以预定间隔布置,并且形成一个或多个精细结构布置区域,每个电极由两个电极的单元形成。 半导体元件电极与多个精细结构接触,每个微结构具有与两个电极接触的两个端部,并且在纵向方向上的长度为纳米级至微米级,并且以参考方式布置在±5度内 到垂直于形成电极的方向的方向。