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公开(公告)号：US09705525B1
公开(公告)日：2017-07-11
申请号：US15178377
申请日：2016-06-09
Applicant: SanDisk Technologies LLC
Inventor： Saurabh Kumar Singh
Abstract: A sensor that can provide multiple resolutions, based on the output of the same analog-to-digital converter is disclosed. Some applications require a fast measurement of a physical parameter (e.g., temperature, voltage, pressure), but can tolerate a lower resolution measurement. Other applications require a higher resolution measurement, but can tolerate a slower measurement. The sensor may comprise a sigma delta modulator (SDM) ADC that outputs a digital reading. The output may comprise a bus having a width that is equal to the desired highest resolution of the digital code for the physical parameter. The sensor may further comprise a storage unit for each desired level of resolution. The sensor may further comprise logic that causes the storage units to sample the output bus after a certain number of clock cycles in order to store a digital code having a number of bits equal to the resolution.
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Patent Agency Ranking
公开(公告)号：US20180374544A1
公开(公告)日：2018-12-27
申请号：US15633747
申请日：2017-06-26
Applicant: SanDisk Technologies LLC
Inventor： Deep Saxena , Saurabh Kumar Singh
CPC classification number: G11C16/32 , G06F1/04 , G11C5/145 , G11C7/222 , G11C16/26 , G11C16/30 , H03B5/04 , H03L1/02 , H03L1/022 , H03L1/026
Abstract: An oscillator circuit includes a voltage controlled oscillator (VCO) configured to generate a clock signal having a clock period that is adjustable based on a control signal. The oscillator circuit includes a time to voltage converter configured to receive the clock signal and generate a compensation voltage potential that is proportional to the clock period and a zero temperature coefficient (ZTC) current. The oscillator circuit includes an amplifier configured to generate the control signal responsive to the compensation voltage potential and a temperature independent reference voltage potential. A method includes applying a control signal to a VCO, generating a clock signal having a clock period responsive to the control signal, generating a compensation voltage potential, and adjusting the clock period using the compensation voltage potential. A memory device includes the oscillator circuit.
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公开(公告)号：US10037810B1
公开(公告)日：2018-07-31
申请号：US15634006
申请日：2017-06-27
Applicant: SanDisk Technologies LLC
Inventor： Hemant Shukla , Saurabh Kumar Singh , Sridhar Yadala , Raul-Adrian Cernea , Anirudh Amarnath
Abstract: The peak voltage at which a voltage-setting transistor is driven is reduced while the body effect of the transistor is also compensated. The voltage-setting transistor is driven at an initial level and then coupled higher by a capacitor which is connected to the control gate of the voltage-setting transistor. The amount of coupling can vary as a function of an assigned data state of a memory cell connected to the transistor by a source line and/or bit line. The capacitor may have a body which is common to a set of memory cells. The voltage can be set prior to applying a program voltage to the control gate of a memory cell to control a programming speed of the memory cell based on its assigned data state. The voltage can also be set in connection with a sensing operation.
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公开(公告)号：US10024729B2
公开(公告)日：2018-07-17
申请号：US15178363
申请日：2016-06-09
Applicant: SanDisk Technologies LLC
Inventor： Saurabh Kumar Singh
CPC classification number: G01K7/34 , G01K7/01 , G01K2219/00 , G05F3/245 , H03M3/43 , H03M3/456 , H03M3/458
Abstract: A temperature sensor is disclosed. In one aspect, the temperature sensor provides a digital output having a precise degree/code step. For example, each step in the digital output code may correspond to one degree Celsius. In one aspect, a temperature sensor comprises a precision band-gap circuit and a sigma delta modulator (SDM) analog-to-digital convertor (ADC). A bandgap voltage and a PTAT voltage may be provided from the band-gap circuit as an input to the SDM ADC. The SDM ADC may produce an output based on the difference between the PTAT voltage and the bandgap voltage. The temperature sensor may also have logic that outputs a temperature code based on the output of the SDM ADC.
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公开(公告)号：US20170257113A1
公开(公告)日：2017-09-07
申请号：US15178363
申请日：2016-06-09
Applicant: SanDisk Technologies LLC
Inventor： Saurabh Kumar Singh
CPC classification number: G01K7/34 , G01K7/01 , G01K2219/00 , G05F3/245 , H03M3/43 , H03M3/456 , H03M3/458
Abstract: A temperature sensor is disclosed. In one aspect, the temperature sensor provides a digital output having a precise degree/code step. For example, each step in the digital output code may correspond to one degree Celsius. In one aspect, a temperature sensor comprises a precision band-gap circuit and a sigma delta modulator (SDM) analog-to-digital convertor (ADC). A bandgap voltage and a PTAT voltage may be provided from the band-gap circuit as an input to the SDM ADC. The SDM ADC may produce an output based on the difference between the PTAT voltage and the bandgap voltage. The temperature sensor may also have logic that outputs a temperature code based on the output of the SDM ADC.
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公开(公告)号：US10546647B2
公开(公告)日：2020-01-28
申请号：US15633747
申请日：2017-06-26
Applicant: SanDisk Technologies LLC
Inventor： Deep Saxena , Saurabh Kumar Singh
Abstract: An oscillator circuit includes a voltage controlled oscillator (VCO) configured to generate a clock signal having a clock period that is adjustable based on a control signal. The oscillator circuit includes a time to voltage converter configured to receive the clock signal and generate a compensation voltage potential that is proportional to the clock period and a zero temperature coefficient (ZTC) current. The oscillator circuit includes an amplifier configured to generate the control signal responsive to the compensation voltage potential and a temperature independent reference voltage potential. A method includes applying a control signal to a VCO, generating a clock signal having a clock period responsive to the control signal, generating a compensation voltage potential, and adjusting the clock period using the compensation voltage potential. A memory device includes the oscillator circuit.
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