利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

61 条记录 (耗时 0.021 秒)

    APPARATUS AND METHODS FOR WIDE TEMPERATURE RANGE OPERATION OF MICROMETER-SCALE SILICON ELECTRO-OPTIC MODULATORS
    2.
    发明申请
    APPARATUS AND METHODS FOR WIDE TEMPERATURE RANGE OPERATION OF MICROMETER-SCALE SILICON ELECTRO-OPTIC MODULATORS 有权
    微电子尺寸硅​​电极调制器的温度范围操作的装置和方法

    公开(公告)号：US20120062974A1

    公开(公告)日：2012-03-15

    申请号：US13257295

    申请日：2010-03-19

    申请人： Sasikanth Manipatruni ,  Rajeev Dokania ,  Alyssa B. Apsel ,  Michal Lipson

    发明人： Sasikanth Manipatruni ,  Rajeev Dokania ,  Alyssa B. Apsel ,  Michal Lipson

    IPC分类号： G02F1/01 ,  H01L21/30

    CPC分类号： G02F1/011 ,  G02F2202/105 ,  G02F2203/15 ,  G02F2203/21 ,  G02F2203/60

    摘要： A thermally stabilized, high speed, micrometer-scale silicon electro-optic modulator is provided. Methods for maintaining desired temperatures in electro-optic modulators are also provided. The methods can be used to maintain high quality modulation in the presence of thermal variations from the surroundings. Direct current injection into the thermally stabilized electro-optic modulator is used to maintain the modulation performance of the modulator. The direct injected current changes the local temperature of the thermally stabilized electro-optic modulator to maintain its operation over a wide temperature range.

    摘要翻译： 提供了热稳定的高速微米级硅电光调制器。 还提供了用于在电光调制器中保持所需温度的方法。 该方法可用于在存在来自周围环境的热变化的情况下保持高质量的调制。 使用直流注入热稳定电光调制器来维持调制器的调制性能。 直接注入电流改变了热稳定化电光调制器的局部温度，以在宽的温度范围内保持其工作。

    ELECTRO-OPTIC MODULATOR STRUCTURES, RELATED METHODS AND APPLICATIONS
    3.
    发明申请
    ELECTRO-OPTIC MODULATOR STRUCTURES, RELATED METHODS AND APPLICATIONS 有权
    电光调制器结构，相关方法和应用

    公开(公告)号：US20130056623A1

    公开(公告)日：2013-03-07

    申请号：US13697866

    申请日：2011-05-13

    申请人： Michal Lipson ,  Sasikanth Manipatruni ,  Long Chen ,  Kyle Preston

    发明人： Michal Lipson ,  Sasikanth Manipatruni ,  Long Chen ,  Kyle Preston

    IPC分类号： H01L31/105 ,  G01J1/04 ,  H01L31/18

    CPC分类号： G02B6/29338 ,  G02B6/12007 ,  G02B6/136 ,  G02B6/29341 ,  G02B2006/12142 ,  G02F1/3133 ,  Y02P70/521

    摘要： An electro-optic modulator structure, a method for fabricating the electro-optic modulator structure, a method for operating an electro-optic modulator device that derives from the electro-optic modulator structure and a related communications apparatus that includes the electro-optic modulator structure all are directed towards effecting a comparatively low voltage operation of the electro-optic modulator device predicated upon consideration of optimal charge carrier injection efficiency characteristics of a PIN diode charge carrier injection based micro-ring electro-optic modulator structure as a function of applied bias voltage. To realize the foregoing result, at least in part, the PIN diode charge carrier injection based electro-optic modulator structure includes at least one of a p-doped region and an n-doped region that has a relatively high volume dopant concentration at a surface thereof.

    摘要翻译： 电光调制器结构，用于制造电光调制器结构的方法，用于操作从电光调制器结构导出的电光调制器装置的方法和包括电光调制器结构的相关通信装置 所有这些都旨在实现电光调制器装置的相当低的电压操作，其基于考虑作为施加的偏置电压的基于PIN二极管电荷载流子注入的微环电光调制器结构的最佳电荷载流子注入效率特性 。 为了实现上述结果，至少部分地基于PIN二极管电荷载流子注入的电光调制器结构包括在表面上具有相对高的体积掺杂剂浓度的p掺杂区域和n掺杂区域中的至少一个 其中。

    ELECTRO-OPTIC MODULATOR
    6.
    发明申请
    ELECTRO-OPTIC MODULATOR 有权
    电光调制器

    公开(公告)号：US20100158426A1

    公开(公告)日：2010-06-24

    申请号：US12566412

    申请日：2009-09-24

    申请人： Sasikanth Manipatruni ,  Michal Lipson

    发明人： Sasikanth Manipatruni ,  Michal Lipson

    IPC分类号： G02F1/035

    CPC分类号： G02F1/2257 ,  G02F2001/0152 ,  G02F2001/212

    摘要： A doping profile for a modulator facilitates rapidly changing the carrier density in a waveguide. The carrier density change causes rapid changes in the index of refraction of the waveguide. Example modulators include a ring modulator and a Mach Zender modulator. A charge reciprocating section may be provided to control the amount of injected charge.

    摘要翻译： 用于调制器的掺杂曲线有助于快速改变波导中的载流子密度。 载流子密度变化引起波导折射率的快速变化。 示例性调制器包括环形调制器和Mach Zender调制器。 可以提供电荷往复部分来控制注入的电荷量。

    PIN DIODE TUNED MULTIPLE RING WAVEGUIDE RESONANT OPTICAL CAVITY SWITCH AND METHOD
    9.
    发明申请
    PIN DIODE TUNED MULTIPLE RING WAVEGUIDE RESONANT OPTICAL CAVITY SWITCH AND METHOD 有权
    PIN二极管调谐多环波形谐振光学开关和方法

    公开(公告)号：US20110170821A1

    公开(公告)日：2011-07-14

    申请号：US12939482

    申请日：2010-11-04

    申请人： Michal Lipson ,  Sasikanth Manipatruni ,  Hugo Leonardo Rocha de Lira

    发明人： Michal Lipson ,  Sasikanth Manipatruni ,  Hugo Leonardo Rocha de Lira

    IPC分类号： G02F1/295 ,  H01L21/30

    CPC分类号： G02F1/025 ,  G02F1/3132 ,  G02F2001/0152 ,  G02F2203/15

    摘要： An optical switch structure and a method for fabricating the optical switch structure provide at least two ring waveguides located and formed supported over a substrate. At least one of the at least two ring waveguides includes at least one PIN diode integral with the ring waveguide as a tuning component for an optical switch device that derives from the optical switch structure. The PIN diode includes different doped silicon slab regions internal to and external to the ring waveguide, and an intrinsic region there between that includes the ring waveguide. The method uses two photolithographic process steps, and also preferably a silicon-on-insulator substrate, to provide the ring waveguides formed of a monocrystalline silicon semiconductor material.

    摘要翻译： 光开关结构和制造光开关结构的方法提供至少两个环形波导，其位于和形成在衬底上。 所述至少两个环形波导中的至少一个包括与所述环形波导成一体的至少一个PIN二极管作为从所述光学开关结构导出的用于光学开关器件的调谐部件。 PIN二极管包括在环形波导内部和外部的不同的掺杂硅片区域，其间包括环形波导的本征区域。 该方法使用两个光刻工艺步骤，并且还优选地是绝缘体上硅衬底，以提供由单晶硅半导体材料形成的环形波导。