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    Crosslinking agent for water-absorbing resin and water-absorbing material obtained with the same
    1.
    发明授权
    Crosslinking agent for water-absorbing resin and water-absorbing material obtained with the same 有权
    由此得到的吸水性树脂和吸水材料的交联剂

    公开(公告)号：US06723797B2

    公开(公告)日：2004-04-20

    申请号：US10049002

    申请日：2002-06-04

    申请人： Satoru Fujii ,  Yoshiyuki Morita ,  Tetsuya Hosomi ,  Nobuaki Aoki

    发明人： Satoru Fujii ,  Yoshiyuki Morita ,  Tetsuya Hosomi ,  Nobuaki Aoki

    IPC分类号： C08F12002

    CPC分类号： C08J3/24 ,  C08F8/18 ,  C08J2300/14 ,  C08K5/053 ,  C08K5/19

    摘要： A crosslinking agent for water-absorbing resins which comprises (A) at least one halohydrin compound selected between (A1) a first halohydrin compound having per molecule at least two halohydrin groups (D) represented by the general formula (I), wherein R1 represents hydrogen or alkyl and X represents chlorine or bromine and (A2) a second halohydrin compound having per molecule at least two halohydrin groups (D) represented by the formula (I) and having per molecule at least one ammonium group (M) represented by the general formula (II), wherein R2's each independently represents a C1-4 hydrocarbon group or benzyl.

    摘要翻译： 一种吸水性树脂用交联剂，其特征在于，含有（A）至少一种选自（A1）由通式（I）表示的每分子至少两个卤代醇基的第一卤代醇化合物（D）的卤代醇化合物，其中，R1表示 氢或烷基，X表示氯或溴，和（A2）每分子具有至少两个由式（I）表示的卤代醇基团（D）并且每分子具有至少一个铵基团（M）的第二卤代醇化合物 通式（II），其中R 2各自独立地表示C 1-4烃基或苄基。

    NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    3.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器元件，非易失性半导体存储器件及其制造非易失性半导体存储器件的方法

    公开(公告)号：US20130270510A1

    公开(公告)日：2013-10-17

    申请号：US13996203

    申请日：2012-06-18

    申请人： Satoru Fujii ,  Kiyotaka Tsuji ,  Takumi Mikawa

    发明人： Satoru Fujii ,  Kiyotaka Tsuji ,  Takumi Mikawa

    IPC分类号： H01L27/24 ,  H01L45/00

    CPC分类号： H01L27/2409 ,  H01L27/228 ,  H01L27/2436 ,  H01L27/2463 ,  H01L29/66143 ,  H01L29/872 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

    摘要： A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first semiconductor layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second semiconductor layer which covers side surfaces of the first current steering element electrode, the first semiconductor layer, and the second current steering element electrode.

    摘要翻译： 非易失性半导体存储元件包括：可变电阻元件，包括第一电极，可变电阻层和第二电极，并且具有根据施加在第一电极和第二电极之间的电脉冲的极性而变化的电阻值 ; 并且电连接到可变电阻元件的电流导向元件允许电流双向流动，并且具有非线性电流 - 电压特性。 当前的操舵元件（i）具有第一电流操舵元件电极，第一半导体层和第二电流操舵元件电极依次层叠的结构，（ⅱ）包括覆盖侧面的第二半导体层 的第一电流操舵元件电极，第一半导体层和第二电流操舵元件电极。

    User interface control method and system for a mobile terminal
    7.
    发明授权
    User interface control method and system for a mobile terminal 有权
    移动终端的用户界面控制方法和系统

    公开(公告)号：US07035629B2

    公开(公告)日：2006-04-25

    申请号：US10292761

    申请日：2002-11-13

    申请人： Satoru Fujii

    发明人： Satoru Fujii

    IPC分类号： H04H3/00

    CPC分类号： H04M1/72519 ,  G06F3/0489 ,  H04W88/02

    摘要： A mobile telephone and an external user interface processing device are connected to a communication network. The external user interface processing device stores a plurality of user interface programs. The mobile telephone transmits key operation event information to the external user interface processing device. The external user interface processing device executes a user interface program to produce a processing result of the key operation event information. The mobile telephone receives the processing result and controls the display according to the received processing result.

    摘要翻译： 移动电话和外部用户接口处理设备连接到通信网络。 外部用户界面处理装置存储多个用户界面程序。 移动电话将键操作事件信息发送到外部用户界面处理装置。 外部用户界面处理装置执行用户界面程序以产生键操作事件信息的处理结果。 移动电话接收处理结果并根据接收到的处理结果控制显示。

    Piezoelectric thin film element, ink jet recording head using such a piezoelectric thin film element, and their manufacture methods
    8.
    发明授权
    Piezoelectric thin film element, ink jet recording head using such a piezoelectric thin film element, and their manufacture methods 有权
    压电薄膜元件，使用这种压电薄膜元件的喷墨记录头及其制造方法

    公开(公告)号：US06688731B1

    公开(公告)日：2004-02-10

    申请号：US09701856

    申请日：2000-12-01

    申请人： Satoru Fujii ,  Isaku Kanno ,  Ryoichi Takayama ,  Osamu Watanabe ,  Kenji Tomita ,  Shigeyuki Takao

    发明人： Satoru Fujii ,  Isaku Kanno ,  Ryoichi Takayama ,  Osamu Watanabe ,  Kenji Tomita ,  Shigeyuki Takao

    IPC分类号： B41J2045

    CPC分类号： B41J2/1629 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2002/1425 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/313 ,  H01L41/316

    摘要： A piezoelectric thin film element D, in which a piezoelectric thin film 1 with first and second electrode films 2 and 3 respectively formed on its opposite surfaces in the thickness direction is held by a hold film 5, is fabricated by forming each film 1, 2, 3, and 5 on a film formation substrate 11 and removing the film formation substrate 11 by etching. Even when the hold film 5 is made of material such as resin and therefore exhibits relatively poor adhesion with respect to the other films, the piezoelectric thin film 1 is protected from damage by etchant because the first electrode film 2 which comes into contact with the film formation substrate 11 is formed such that the overall circumference of a peripheral edge portion of the first electrode film 2 laterally extends beyond the lateral surface of the piezoelectric thin film 1 and closely adheres to the hold film 5.

    摘要翻译： 通过形成每个膜1,2制造压电薄膜元件D，其中分别在其厚度方向的相对表面上形成有第一和第二电极膜2和3的压电薄膜1由保持膜5保持 ，3和5在成膜基板11上，并通过蚀刻去除成膜基板11。 即使当保持膜5由诸如树脂的材料制成并且因此相对于其它膜显示相对较差的粘合力时，由于与膜接触的第一电极膜2，保护了压电薄膜1免受腐蚀剂损伤 形成基板11形成为使得第一电极膜2的周边部分的整个周边横向延伸超过压电薄膜1的侧表面并且紧密地附着到保持膜5。

    Infrared radiation detector and method of manufacturing the same
    9.
    发明授权
    Infrared radiation detector and method of manufacturing the same 失效
    红外辐射探测器及其制造方法

    公开(公告)号：US06326621B1

    公开(公告)日：2001-12-04

    申请号：US09323730

    申请日：1999-06-01

    申请人： Takeshi Kamada ,  Ryoichi Takayama ,  Satoru Fujii ,  Atsushi Tomozawa ,  Isaku Kanno

    发明人： Takeshi Kamada ,  Ryoichi Takayama ,  Satoru Fujii ,  Atsushi Tomozawa ,  Isaku Kanno

    IPC分类号： G01J502

    CPC分类号： G01J5/20 ,  G01J5/34

    摘要： The invention provides a compact and high performance infrared radiation detector. The infrared radiation detector contains: a substrate; and at least two infrared radiation detector units selected from the group consisting of a pyroelectric infrared radiation detector unit, a resistive bolometer type infrared radiation detector unit and a ferroelectric bolometer type infrared radiation detector unit, the infrared radiation detector units being disposed on the same side of the substrate.

    摘要翻译： 本发明提供了一种紧凑且高性能的红外辐射探测器。 红外辐射检测器包含：基板; 以及选自热电型红外线辐射检测器单元，电阻辐射热计型红外线检测器单元和铁电测辐射热计型红外线检测器单元的至少两个红外线检测器单元，所述红外线检测器单元设置在同一侧 的基底。

    Ferroelectric thin film and method of manufacturing the same
    10.
    发明授权
    Ferroelectric thin film and method of manufacturing the same 失效
    铁电薄膜及其制造方法

    公开(公告)号：US5717157A

    公开(公告)日：1998-02-10

    申请号：US351216

    申请日：1994-11-30

    申请人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Ryoichi Takayama ,  Masafumi Kobune ,  Satoshi Fujii

    发明人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Ryoichi Takayama ,  Masafumi Kobune ,  Satoshi Fujii

    IPC分类号： C04B35/472 ,  C23C14/08 ,  C23C14/34 ,  C30B23/02 ,  H01L37/02 ,  H01L41/316 ,  H01L35/22 ,  C04B35/491

    CPC分类号： H01L41/316 ,  C04B35/472 ,  C23C14/08 ,  C23C14/3414 ,  C30B23/02 ,  C30B29/32 ,  H01L37/025

    摘要： A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, �(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.multidot.MgO!, where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.

    摘要翻译： 铁电薄膜包括包含La的钛酸铅和至少与氧原子形成六配位键的元素，并且选自Mg和Mn。 铁电薄膜在没有极化过程的情况下形成膜时赋予高c轴取向。 铁电薄膜通过以下步骤制造：通过溅射法将预先设置有基底铂电极的MgO单晶基板定位在基板加热器的表面上，排出室，通过基板加热器加热基板，使 在通过喷嘴将气体Ar和O2溅射到室中，并保持高度的真空度。 然后，将高频电力从高频电源输入到目标物，产生等离子体，在基板上形成膜。 以这种方式，可以制造含有例如[（1-x）xPb1-yLayTi1-y / 4O3 + xxMgO]的铁电薄膜，其中x = 0.01DIFFERENCE 0.10和y = 0.05DIFFERENCE 0.25。