公开(公告)号：US4912715A

公开(公告)日：1990-03-27

申请号：US285595

申请日：1988-12-16

申请人： Satoshi Aoki ,  Tsuyoshi Tanaka

发明人： Satoshi Aoki ,  Tsuyoshi Tanaka

IPC分类号： H01S5/00 ,  H01S5/022 ,  H01S5/042 ,  H01S5/062

CPC分类号： H01S5/02248 ,  H01S5/022 ,  H01S5/0427 ,  H01S5/06226 ,  H01S5/0683

摘要： In a semiconductor laser module incorporating a driving circuit therein, which contains a semiconductor laser mounted on an electronic cooling element and a semiconductor laser driving IC within the same package, is provided an electrode lead on a stem for mounting a semiconductor laser, for connecting the semiconductor laser with a board carrying a driving IC and the dimensions of the electrode lead are defined so as to reduce the stray capacitance and the parasitic inductance and to optimize the thermal resistance. A gap of a value not to introduce an increase of an unnecessary inductance between the semiconductor laser mounting portion and the driver IC mounting board is provided to spatially divide the semiconductor laser mounting portion and the driver IC mounting board. Thereby, the inflow of the heat generated in a driver IC into a semiconductor laser mounted on an electronic cooling element can be suppressed without degrading the high speed modulation characteristics in the giga-bits band.

摘要翻译： 在其中包含驱动电路的半导体激光器模块中，其中包含安装在电子冷却元件上的半导体激光器和同一封装内的半导体激光器驱动IC，在用于安装半导体激光器的杆上设置有用于连接 定义了具有承载驱动IC的电路板和电极引线的尺寸的半导体激光器，以便减少杂散电容和寄生电感并优化热阻。 在半导体激光器安装部分和驱动器IC安装板之间提供不引起不必要的电感增加的值的间隙，从而在半导体激光器安装部分和驱动器IC安装板之间进行空间划分。 由此，可以抑制在驱动IC中产生的热量入到安装在电子冷却元件上的半导体激光器中，而不降低千兆比特带中的高速调制特性。

公开(公告)号：US5315609A

公开(公告)日：1994-05-24

申请号：US968668

申请日：1992-10-30

申请人： Tsuyoshi Tanaka ,  Satoshi Aoki ,  Kazuyuki Fukuda

发明人： Tsuyoshi Tanaka ,  Satoshi Aoki ,  Kazuyuki Fukuda

IPC分类号： G02B6/42 ,  H01S3/18 ,  G02B6/26

CPC分类号： G02B6/4248 ,  G02B6/4204

摘要： A semiconductor laser module is provided by silver soldering the holder part of Kovar to the package of Kovar, and then silver soldering the lens holder part of pure iron or a stainless steel to the holder part. The lens holder part has the convergent rod lens fixedly soldered thereto by an Au/Sn solder of a high melting point of 280.degree. C. The semiconductor laser is fixedly soldered onto a stem, with the stem, the optical fiber and ferrule holder being fixedly soldered at positions so that the light emitted from the semiconductor laser is converged by the convergent rod lens at the light incidence end of the optical fiber and the laser light is coupled to the optical fiber. Thus, the convergent rod lens can be fixed with high-melting-point joining means, and a semiconductor laser module for optical communications in which the deterioration of light connection repeatedly generated by heat stress is suppressed can be obtained.

摘要翻译： 通过将Kovar的保持器部分银焊接到Kovar的包装上提供半导体激光器模块，然后将纯铁或不锈钢的透镜保持器部分银焊接到保持器部分。 透镜保持器部分具有通过280℃的高熔点的Au / Sn焊料固定地焊接在其上的会聚棒透镜。半导体激光器固定地焊接到杆上，杆，光纤和套圈保持器固定 焊接在位置，使得从半导体激光器发射的光由会聚棒状透镜会聚在光纤的入射端，激光与光纤耦合。 因此，会聚杆透镜可以用高熔点接合装置固定，并且可以获得其中抑制由热应力反复产生的光连接的劣化的用于光通信的半导体激光器模块。

公开(公告)号：US5128956A

公开(公告)日：1992-07-07

申请号：US683615

申请日：1991-04-11

申请人： Satoshi Aoki ,  Atsushi Murata ,  Tsuyoshi Tanaka

发明人： Satoshi Aoki ,  Atsushi Murata ,  Tsuyoshi Tanaka

IPC分类号： G02B6/42 ,  H01S5/00

CPC分类号： G02B6/4209 ,  G02B6/4208 ,  G02B6/4248 ,  G02B6/4207

摘要： In a semiconductor laser module with a built-in optical isolator which isolator consists of a polarizer, a Faraday rotator and an analyzer, an optical refraction sheet having a wedge-shaped section is disposed on the beam incidence side of the polarizer. Accordingly, even when the mechanical center axis of the optical isolator is placed to be in parallel with the optical axis of the semiconductor laser or in other words, even when the beam incidence-outgoing surfaces of the polarizer, Faraday rotator and analyzer are placed to be vertical to the incident parallel beams, the parallel beams incident into the optical isolator are refracted by the optical refraction sheet having the wedge-shaped section, so that the parallel beams passing through the beam incidience-outgoing surfaces of the polarizer, Faraday rotator and analyzer do not pass vertically and the return of reflected beams to the semiconductor laser can be thus reduced.

摘要翻译： 在具有内置光隔离器的半导体激光器模块中，隔离器由偏振器，法拉第旋转器和分析器组成，具有楔形截面的光学折射片设置在偏振器的光束入射侧。 因此，即使将光隔离器的机械中心轴设置为与半导体激光器的光轴平行，换句话说，即使当将偏振器，法拉第旋转器和分析器的光束入射表面放置到 垂直于入射的平行光束，入射到光隔离器中的平行光束被具有楔形截面的光学折射片折射，使得平行光束通过偏振器的光束出射表面，法拉第旋转器和 分析仪不会垂直通过，因此可以减少反射光束到半导体激光器的返回。

公开(公告)号：USD820517S1

公开(公告)日：2018-06-12

申请号：US35502913

申请日：2017-04-12

申请人： Tsuyoshi Tanaka

设计人： Tsuyoshi Tanaka

公开(公告)号：US09103781B2

公开(公告)日：2015-08-11

申请号：US14343528

申请日：2011-09-12

申请人： Kouji Kusumoto ,  Yutaka Unuma ,  Hideki Kinoshita ,  Shinichi Goto ,  Tsuyoshi Tanaka ,  Yuji Maruo

发明人： Kouji Kusumoto ,  Yutaka Unuma ,  Hideki Kinoshita ,  Shinichi Goto ,  Tsuyoshi Tanaka ,  Yuji Maruo

IPC分类号： G01N27/447

CPC分类号： G01N27/44773 ,  G01N27/44739

摘要： A sample separation and adsorption appliance (100) includes a negative electrode (2), a positive electrode (3), a sample separation unit (6) that has a first opening (17) opened to a side facing the negative electrode (2) and a second opening (18) opened to a side facing the positive electrode (3), the sample separation unit containing a separation gel (7), and a slit structure (8) including a slit (1) at a position facing the second opening (18). A transfer film (9) is arranged between the second opening (18) and the slit (1).

摘要翻译： 样品分离吸附装置（100）包括负极（2），正极（3），样品分离单元（6），其具有朝向负极（2）的一侧开口的第一开口（17） 以及向与所述正极（3）相对的一侧开放的第二开口（18），所述样品分离单元包含分离凝胶（7），以及狭缝结构（8），所述狭缝结构（8）在面向所述第二 开（18）。 转印膜（9）布置在第二开口（18）和狭缝（1）之间。

公开(公告)号：US08796461B2

公开(公告)日：2014-08-05

申请号：US13634943

申请日：2011-03-16

申请人： Tsuyoshi Tanaka ,  Mayumi Abe ,  Nobumichi Arai ,  Naoki Uchida ,  Takashi Iida

发明人： Tsuyoshi Tanaka ,  Mayumi Abe ,  Nobumichi Arai ,  Naoki Uchida ,  Takashi Iida

IPC分类号： C07D213/04 ,  C07D213/06

CPC分类号： C07D213/06 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  H01L51/0067 ,  H01L51/5048 ,  H05B33/10

摘要： A 1,2,4,5-substituted phenyl compound represented by the formula (1): wherein one of X1-X5 is nitrogen and the remainders of X1-X5 are carbon; R1 and R2 represent hydrogen, C1-6 alkyl or C1-6 alkoxy; R3 and R4 represent C1-6 alkyl or C1-6 alkoxy; and m is an integer of 0-4, and n is an integer of 0-5. This compound is useful as a constituent for an organic electroluminescent device.

摘要翻译： 由式（1）表示的1,2,4,5-取代苯基化合物：其中X 1 -X 5中的一个为氮，X 1 -X 5的残基为碳; R1和R2表示氢，C1-6烷基或C1-6烷氧基; R3和R4代表C1-6烷基或C1-6烷氧基; m为0-4的整数，n为0〜5的整数。 该化合物可用作有机电致发光器件的组分。

公开(公告)号：US08665477B2

公开(公告)日：2014-03-04

申请号：US13311930

申请日：2011-12-06

申请人： Tsuyoshi Tanaka

发明人： Tsuyoshi Tanaka

IPC分类号： G06F15/00

CPC分类号： G06K15/181 ,  G06F3/1205 ,  G06F3/1228 ,  G06F3/1232 ,  G06F3/1292 ,  G06K15/1801 ,  G06K15/4005

摘要： In a print system, print data and print setting information are transmitted from a terminal to a printing apparatus via an email, and the printing apparatus performs a printing process of the print data based on the print setting information. The printing apparatus includes: a first receiving unit that receives a print request email from the terminal; a transmission unit that transmits, to the terminal, a reply email that includes allowable print setting information representing information on designable print settings; and a second receiving unit that receives a second reply email having been transmitted from the terminal and including print setting information designated from among the allowable print setting information.

摘要翻译： 在打印系统中，通过电子邮件将打印数据和打印设置信息从终端传送到打印设备，并且打印设备基于打印设置信息执行打印数据的打印处理。 打印装置包括：第一接收单元，从终端接收打印请求电子邮件; 发送单元，向终端发送包含表示关于可设计的打印设置的信息的允许打印设置信息的回复电子邮件; 以及第二接收单元，其接收从终端发送的第二应答电子邮件，并且包括从可允许打印设置信息中指定的打印设置信息。

公开(公告)号：US08304812B2

公开(公告)日：2012-11-06

申请号：US13051455

申请日：2011-03-18

申请人： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Shinichi Takigawa ,  Tsuyoshi Tanaka

发明人： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Shinichi Takigawa ,  Tsuyoshi Tanaka

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/0692 ,  H01L29/41725 ,  H01L29/42316

摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

摘要翻译： 太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。 源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。

公开(公告)号：US20120153355A1

公开(公告)日：2012-06-21

申请号：US13402631

申请日：2012-02-22

申请人： Hidekazu UMEDA ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hidekazu UMEDA ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/78

CPC分类号： H01L29/2003 ,  H01L29/1066 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861

摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.

摘要翻译： 氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。 半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。 氮化物半导体层包括元件区域和围绕元件区域的隔离区域。 元件区域形成在正常区域上。 界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

公开(公告)号：US20120126290A1

公开(公告)日：2012-05-24

申请号：US13360275

申请日：2012-01-27

申请人： Yasuhiro UEMOTO ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yasuhiro UEMOTO ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7783

摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

摘要翻译： 氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。