-
公开(公告)号：US20080166098A1
公开(公告)日：2008-07-10
申请号：US11910978
申请日：2007-03-22
CPC分类号： G02B6/4204 , G02B6/4237 , G02B6/4292
摘要： An optical-waveguide device mounted on a fixing member having a pair of opposing upright walls and a sub-mount unit including a metallic sub-mount of a rectangular solid shape inserted between the opposing upright walls and a nonmetallic sub-mount of a rectangular solid shape mounted on the metallic sub-mount, and fixed onto a base table. The fixing member and the sub-mount unit as well as the fixing member and the base table are spot-welded together using YAG welding.
摘要翻译： 一种光波导装置，其安装在具有一对相对的直立壁的固定构件上，以及副安装单元，其包括插入在相对的直立壁之间的矩形实心形状的金属副底座和矩形固体的非金属底座 形状安装在金属底座上，并固定在基座上。 使用YAG焊接将固定构件和副安装单元以及固定构件和基座点焊接在一起。
-
公开(公告)号：US07618201B2
公开(公告)日：2009-11-17
申请号：US11910978
申请日：2007-03-22
IPC分类号： G02B6/36 , G02B6/12 , G02B6/26 , G02B6/34 , G02B6/30 , G02B6/255 , G02B6/10 , G02B6/00 , H04B10/12 , G02B7/02 , H01S3/13 , H01S3/04 , H01S3/08 , C03C27/00 , C03C27/02
CPC分类号： G02B6/4204 , G02B6/4237 , G02B6/4292
摘要： An optical-waveguide device mounted on a fixing member having a pair of opposing upright walls and a sub-mount unit including a metallic sub-mount of a rectangular solid shape inserted between the opposing upright walls and a nonmetallic sub-mount of a rectangular solid shape mounted on the metallic sub-mount, and fixed onto a base table. The fixing member and the sub-mount unit as well as the fixing member and the base table are spot-welded together using YAG welding.
摘要翻译： 一种光波导装置，其安装在具有一对相对的直立壁的固定构件上，以及副安装单元，其包括插入在相对的直立壁之间的矩形实心形状的金属副底座和矩形固体的非金属底座 形状安装在金属底座上，并固定在基座上。 使用YAG焊接将固定构件和副安装单元以及固定构件和基座点焊接在一起。
-
公开(公告)号：US07525726B2
公开(公告)日：2009-04-28
申请号：US11505428
申请日：2006-08-17
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , G02B6/1225 , G02F1/01708 , G02F1/025 , G02F2201/346 , G02F2202/32 , G02F2203/055 , H01S5/0265 , H01S5/105 , H01S5/12 , H01S5/18311 , H01S5/18319 , H01S5/18369 , H01S5/2027
摘要： To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.
摘要翻译： 本发明提供一种光子晶体半导体器件及其制造方法，该光子晶体半导体器件能够实现使用半导体和半导体制造工艺容易地形成的具有光子晶体结构的各种光学器件。 该目的可以通过光子晶体结构实现，其包括从n-InP衬底11侧依次层叠的下DBR层1，芯层2，上DBR层3和电介质多层膜6，多个 形成在芯层2和上DBR层3中的膜厚度方向上的孔9以及在其中形成有多个孔并且设置在多个孔9之间的线缺陷部10，其中线 缺陷部分10用作光波导。
-
公开(公告)号：US20070013991A1
公开(公告)日：2007-01-18
申请号：US11505428
申请日：2006-08-17
CPC分类号： B82Y20/00 , G02B6/1225 , G02F1/01708 , G02F1/025 , G02F2201/346 , G02F2202/32 , G02F2203/055 , H01S5/0265 , H01S5/105 , H01S5/12 , H01S5/18311 , H01S5/18319 , H01S5/18369 , H01S5/2027
摘要： To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.
摘要翻译： 本发明提供一种光子晶体半导体器件及其制造方法，该光子晶体半导体器件能够实现使用半导体和半导体制造工艺容易地形成的具有光子晶体结构的各种光学器件。 该目的可以通过光子晶体结构实现，其包括从n-InP衬底11侧依次层叠的下DBR层1，芯层2，上DBR层3和电介质多层膜6，多个 形成在芯层2和上DBR层3中的膜厚度方向上的孔9以及在其中形成有多个孔并且设置在多个孔9之间的线缺陷部10，其中线 缺陷部分10用作光波导。
-
公开(公告)号：US07885312B2
公开(公告)日：2011-02-08
申请号：US12219997
申请日：2008-07-31
申请人： Tomofumi Kise , Noriyuki Yokouchi
发明人： Tomofumi Kise , Noriyuki Yokouchi
IPC分类号： H01S3/08
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/0425 , H01S5/105 , H01S5/18319 , H01S5/18377 , H01S5/34306 , H01S2301/166 , H01S2302/00
摘要： A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
摘要翻译： 表面发射激光器设置有具有在中心具有点缺陷的光子晶体结构的上反射镜，并且从下反射镜侧发射激光束。 在中心的点缺陷处形成上电极，并且元件电阻降低。 将对激光束的波长透明的材料用于基板。 通过降低光子晶体表面发射激光器的元件电阻来提高发射效率。
-
公开(公告)号：US20100111468A1
公开(公告)日：2010-05-06
申请号：US12482233
申请日：2009-06-10
IPC分类号： G02B6/122
CPC分类号： G02B6/12004 , G02B6/12021
摘要： An optical integrated circuit includes a planar lightwave circuit, and a semiconductor element, which are fixed at one contact surface. A semiconductor optical amplifier (SOA) and a turnaround waveguide having a turnaround portion are formed on a semiconductor substrate. The turnaround waveguide is turned around on the second substrate and is connected to an output port of the SOA. An input port and an output port of the turnaround waveguide are optically coupled at the contact surface with an input port and an output port of the optical waveguides respectively.
摘要翻译： 光学集成电路包括固定在一个接触表面的平面光波电路和半导体元件。 在半导体衬底上形成半导体光放大器（SOA）和具有折回部分的周转波导。 转向波导在第二基板上转动并连接到SOA的输出端口。 转向波导的输入端口和输出端口在接触表面处分别与光波导的输入端口和输出端口耦合。
-
公开(公告)号：US07564563B2
公开(公告)日：2009-07-21
申请号：US11806486
申请日：2007-05-31
申请人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
发明人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
IPC分类号： G01C19/72
CPC分类号： G01C19/66
摘要： A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.
摘要翻译： 本发明的激光陀螺仪包括：激光激发装置（半导体激光装置100），其激励在圆形环状路径（光路40）中以相反的方向传播的第一和第二激光，耦合装置 （光波导41和42），用于重叠第一和第二激光;以及光电检测器，用于观察由叠加的第一和第二激光产生的干涉信号。
-
8.发明授权
公开(公告)号：US5666375A
公开(公告)日：1997-09-09
申请号：US555472
申请日：1995-11-08
CPC分类号： B82Y20/00 , H01S5/3434 , H01S5/3409 , H01S5/34306
摘要： The present invention gives rise to a 1.3 .mu.m tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 .mu.m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm.sup.2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.
摘要翻译： 本发明产生了具有量子阱活性层的1.3μm拉伸应变量子阱激光器，该量子阱活性层可以在结构上被定义为In1-xGaxAsyP1-y，X在0.42和0.55之间，Y在0.8和0.75之间。 InGaAsP有源层需要具有1.0至1.5％的拉伸应力，并且可以在InP和GaAs之间没有任何实质相分离的情况下制造。 1.3μm拉伸应变量子阱激光器的阈值电流密度极小，小于0.2kA / cm2。 优选的拉伸应变范围在1.2至1.4％之间或其附近。
-
公开(公告)号：US20080298420A1
公开(公告)日：2008-12-04
申请号：US12219997
申请日：2008-07-31
申请人： Tomofumi Kise , Noriyuki Yokouchi
发明人： Tomofumi Kise , Noriyuki Yokouchi
IPC分类号： H01S5/18
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/0425 , H01S5/105 , H01S5/18319 , H01S5/18377 , H01S5/34306 , H01S2301/166 , H01S2302/00
摘要： A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
摘要翻译： 表面发射激光器设置有具有在中心具有点缺陷的光子晶体结构的上反射镜，并且从下反射镜侧发射激光束。 在中心的点缺陷处形成上电极，并且元件电阻降低。 将对激光束的波长透明的材料用于基板。 通过降低光子晶体表面发射激光器的元件电阻来提高发射效率。
-
公开(公告)号：US20050220160A1
公开(公告)日：2005-10-06
申请号：US11138424
申请日：2005-05-27
CPC分类号： H01S5/18313 , B82Y20/00 , H01S5/0021 , H01S5/18358 , H01S5/18361 , H01S5/305 , H01S5/32366 , H01S5/34306
摘要： A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0
摘要翻译： 垂直腔表面发射半导体激光器（VCSEL）器件具有夹在其间的包括有源层的谐振腔的p型和n型DBR。 每个DBR具有多个层对，每层包括一个高反射率层和一个Al 2 x 2 Ga， SUB> 1-x2作为低反射率层和Al x 3 Ga 1-x 3 As插入在每个高反射层之间的倾斜含量层和 相邻的低反射层。 有源层附近的斜率含量层具有Al含量×3，其中0
-3以上。
-
-
-
-
-
-
-
-
-
搜索结果
34 条记录 (耗时 0.024 秒)
