中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.022 seconds)

    LIGHT EMITTING DIODE HAVING ELECTRODE PADS
    2.
    发明申请
    LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
    具有电极垫的发光二极管

    公开(公告)号：US20170012173A1

    公开(公告)日：2017-01-12

    申请号：US15273265

    申请日：2016-09-22

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Sum Geun LEE ,  Jin Cheol SHIN ,  Yeo Jin YOON ,  Kyoung Wan KIM ,  Jeong Hee YANG

    IPC: H01L33/38 ,  H01L27/15 ,  H01L33/62 ,  H01L33/08

    CPC classification number: H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting diode includes a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer disposed under the second electrode pad. The insulation layer overlaps the first conductive type semiconductor layer and the second conductive type semiconductor layer. The insulation layer is flush with an edge of the first conductive type semiconductor layer and the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.

    Abstract translation: 发光二极管包括衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层 半导体层，电连接到第一导电类型半导体层的第一电极焊盘，电连接到第二导电类型半导体层的第二电极焊盘，以及设置在第二电极焊盘下方的绝缘层。 绝缘层与第一导电类型半导体层和第二导电类型半导体层重叠。 绝缘层与第一导电类型半导体层的边缘齐平，第二电极焊盘与第一导电类型半导体层的边缘间隔开。

    LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME 审中-公开
    具有分布式布拉格反射器的发光二极管芯片及其制造方法

    公开(公告)号：US20150207039A1

    公开(公告)日：2015-07-23

    申请号：US14606863

    申请日：2015-01-27

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Sum Geun LEE ,  Sang Ki JIN ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  So Ra LEE ,  Chung Hoon LEE

    IPC: H01L33/46 ,  H01L33/50 ,  H01L27/15 ,  H01L33/22 ,  H01L33/60

    CPC classification number: H01L27/153 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

    Abstract: A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.

    Abstract translation: 一种发光二极管芯片，被配置为发射第一波长范围的光和包括基板的第二波长范围的光，设置在所述基板的第一表面上的发光结构，所述发光结构包括有源层 设置在第一导电类型半导体层和第二导电类型半导体层之间并被配置为发射第一波长范围的光，以及布置在基板的第二表面上的第一和第二分布布拉格反射器（DBR）。 第一DBR被设置为比第二DBR更靠近基板，第一波长范围包括蓝色波长范围，第一DBR包括对于第二波长范围的光比第一波长范围的光更高的反射率， 对于第一波长范围的光，DBR包括比对于第二波长范围的光更高的反射率。

Patent Agency Ranking