MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
    3.
    发明申请
    MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 有权
    存储装置及其操作方法

    公开(公告)号:US20120269010A1

    公开(公告)日:2012-10-25

    申请号:US13238435

    申请日:2011-09-21

    IPC分类号: G11C7/06

    摘要: A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.

    摘要翻译: 存储器包括被配置为存储第一标志数据的至少一个第一标志单元,被配置为存储第二标志数据的至少一个第二标志单元,具有由第一标志单元的第一标志数据确定的电压电平的至少一个第一感测节点 至少一个第二感测具有由第二标志单元的第二标志数据确定的电压电平,选择电路被配置为响应于标志地址选择第一感测节点或第二感测节点; 以及确定电路,其具有内部节点,通过所述内部节点流过与所选择的感测节点的电压电平相对应的电流,并且被配置为通过使用一定数量的第一和第二标志数据来确定与所选择的感测节点对应的标志数据的逻辑值 电流流过内部节点。

    Laser irradiation apparatus, irradiation method using the same, and method of crystallizing amorphous silicon film using the same
    5.
    发明授权
    Laser irradiation apparatus, irradiation method using the same, and method of crystallizing amorphous silicon film using the same 有权
    激光照射装置,使用该激光照射装置的照射方法以及使用其的使非晶硅膜结晶的方法

    公开(公告)号:US08351317B2

    公开(公告)日:2013-01-08

    申请号:US12946715

    申请日:2010-11-15

    申请人: Ji-Hwan Kim

    发明人: Ji-Hwan Kim

    IPC分类号: G11B7/00

    摘要: Provided are a laser irradiation apparatus, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same. Particularly, a laser irradiation apparatus which can reduce a deviation of an intensity of a laser beam, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same, which can improve uniformity in crystallization into a polycrystalline silicon thin film, are provided.

    摘要翻译: 提供了一种激光照射装置,使用该激光照射装置的照射方法和使用其的使非晶硅膜结晶的方法。 特别地,可以减少激光束的强度偏差的激光照射装置,使用该激光束的照射方法以及使用该激光照射装置的非晶硅膜的结晶方法,其可以提高结晶化为多晶硅薄片的均匀性 电影。

    NON-VOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
    6.
    发明申请
    NON-VOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 有权
    非易失性存储器件及其操作方法

    公开(公告)号:US20120269020A1

    公开(公告)日:2012-10-25

    申请号:US13232304

    申请日:2011-09-14

    IPC分类号: G11C7/00

    摘要: A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line.

    摘要翻译: 用于操作非易失性存储器件的方法包括响应于程序命令和接收到的地址选择多个字线的字线,确定所选择的字线是否是字线中的字线,执行 响应于所述确定的结果对所述字线的第二字线组进行擦除操作,以及对所选择的字线执行编程操作。

    Semiconductor memory device and method for operating the same
    7.
    发明授权
    Semiconductor memory device and method for operating the same 失效
    半导体存储器件及其操作方法

    公开(公告)号:US08289787B2

    公开(公告)日:2012-10-16

    申请号:US12974419

    申请日:2010-12-21

    IPC分类号: G11C7/00

    CPC分类号: G11C7/04 G11C16/10 G11C16/30

    摘要: A semiconductor memory device, including a temperature detector configured to output a temperature detection signal in response to a temperature detected in a core region which includes a plurality of memory cells, and a programming voltage generator configured to generate a programming voltage in response to the temperature detection signal and output a generated programming voltage to the core region.

    摘要翻译: 一种半导体存储器件,包括:温度检测器,被配置为响应于在包括多个存储器单元的芯区域中检测到的温度输出温度检测信号;以及编程电压发生器,其被配置为响应于所述温度而产生编程电压 检测信号并将产生的编程电压输出到核心区域。

    Method of classifying and storing call durations according to a calling partner
    8.
    发明申请
    Method of classifying and storing call durations according to a calling partner 审中-公开
    根据呼叫伙伴对呼叫持续时间进行分类和存储的方法

    公开(公告)号:US20050064848A1

    公开(公告)日:2005-03-24

    申请号:US10925236

    申请日:2004-08-23

    摘要: The present invention relates to a method of classifying and storing the call durations of a mobile communication terminal and, more particularly, to a method of classifying and storing call durations, which classifies call durations, call time categories, etc. related to calls with calling partners stored in the address book of the mobile communication terminal, so that the user can recognize his or her call pattern and control the amount of call traffic, thus efficiently utilizing the mobile communication terminal. When an incoming or outgoing call is started, a calling partner of the call is identified, and a timer is operated to count call duration. When the call is terminated, the timer is stopped, and the actual call duration with the calling partner is calculated, thus classifying the call duration. The classified call duration is stored in the information area according to the calling partner of the call.

    摘要翻译: 本发明涉及一种对移动通信终端的呼叫持续时间进行分类和存储的方法,更具体地说,涉及一种对呼叫持续时间进行分类和存储的方法,其中呼叫持续时间,呼叫时间类别等通过主叫 存储在移动通信终端的地址簿中的合作伙伴,使得用户可以识别他或她的呼叫模式并控制呼叫业务量,从而有效地利用移动通信终端。 当呼入或呼出呼叫开始时,呼叫的呼叫伙伴被识别,并且操作定时器来计算呼叫持续时间。 当呼叫终止时,定时器停止,并且计算与呼叫伙伴的实际呼叫持续时间,从而对呼叫持续时间进行分类。 分类的呼叫持续时间根据呼叫的呼叫伙伴存储在信息区域中。

    Memory device and method for operating the same
    9.
    发明授权
    Memory device and method for operating the same 有权
    存储器件及其操作方法

    公开(公告)号:US08750048B2

    公开(公告)日:2014-06-10

    申请号:US13238435

    申请日:2011-09-21

    摘要: A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.

    摘要翻译: 存储器包括被配置为存储第一标志数据的至少一个第一标志单元,被配置为存储第二标志数据的至少一个第二标志单元,具有由第一标志单元的第一标志数据确定的电压电平的至少一个第一感测节点 至少一个第二感测具有由第二标志单元的第二标志数据确定的电压电平,选择电路被配置为响应于标志地址选择第一感测节点或第二感测节点; 以及确定电路,其具有内部节点,通过所述内部节点流过与所选择的感测节点的电压电平相对应的电流,并且被配置为通过使用一定数量的第一和第二标志数据来确定与所选择的感测节点对应的标志数据的逻辑值 电流流过内部节点。

    Non-volatile memory device and method for operating the same
    10.
    发明授权
    Non-volatile memory device and method for operating the same 有权
    非易失性存储器件及其操作方法

    公开(公告)号:US08451665B2

    公开(公告)日:2013-05-28

    申请号:US13232304

    申请日:2011-09-14

    IPC分类号: G11C16/04

    摘要: A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line.

    摘要翻译: 用于操作非易失性存储器件的方法包括响应于程序命令和接收到的地址选择多个字线的字线,确定所选择的字线是否是字线中的字线,执行 响应于所述确定的结果对所述字线的第二字线组进行擦除操作,以及对所选择的字线执行编程操作。