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公开(公告)号：US06689252B1
公开(公告)日：2004-02-10
申请号：US09363250
申请日：1999-07-28
IPC分类号： B01J1908
CPC分类号： B01D53/8659 , B01D53/68 , B01D53/70 , B01D53/74 , B01D53/8662 , B01D2257/2066 , B01J19/08 , B01J19/12 , B01J19/129 , Y02C20/30
摘要： An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent plasma reactor 210 and a downstream catalytic reactor 220. The reactor 210 may include a consumable liner that reacts with the energized effluent to remove the hazardous gases. The catalytic reactor 220 may also include catalytic surfaces 227 in a honeycomb, foam, or pellet structure 225 to catalyze reactions that further reduce hazardous gas content.
摘要翻译： 用于减少从处理室25排出的有害气体的装置和方法包括流出物等离子体反应器210和下游催化反应器220.反应器210可包括消耗性衬里，其与通电的流出物反应以除去有害气体。 催化反应器220还可以包括在蜂窝状，泡沫状或颗粒结构225中的催化表面227，以催化进一步减少有害气体含量的反应。
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公开(公告)号：US06391146B1
公开(公告)日：2002-05-21
申请号：US09547423
申请日：2000-04-11
IPC分类号： H05H100
CPC分类号： C23C16/4412 , B01D53/34 , B01D53/70
摘要： An apparatus and method for reducing hazardous gases exhausted from a process chamber 25 includes an effluent gas treatment system 200 with a gas energizing reactor 210 with an erosion resistant inner surface 280. Optionally, an additive gas source 230 may be provided to introduce additive gas into the gas energizing reactor 210. In one embodiment, the inner surface comprises a fluorine-containing compound. In another embodiment, the inner surface comprises an oxide and a stabilizing agent.
摘要翻译： 用于减少从处理室25排出的有害气体的装置和方法包括具有带有耐腐蚀内表面280的气体激励反应器210的废气处理系统200.任选地，可以提供添加气体源230以将添加气体引入 气体通电反应器210.在一个实施方案中，内表面包含含氟化合物。 在另一个实施方案中，内表面包含氧化物和稳定剂。
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公开(公告)号：US06367412B1
公开(公告)日：2002-04-09
申请号：US09506111
申请日：2000-02-17
申请人： Kartik Ramaswamy , Kwok Manus Wong , Ashish Bhatnagar , Mehran Moalem , Tony S. Kaushal , Shamouil Shamouilian
发明人： Kartik Ramaswamy , Kwok Manus Wong , Ashish Bhatnagar , Mehran Moalem , Tony S. Kaushal , Shamouil Shamouilian
IPC分类号： C23C1600
CPC分类号： H01J37/32495 , B01D53/8662 , B01D2257/2066 , B01D2259/818 , C23C16/4412 , Y02C20/30
摘要： A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF coil wrapped around the tube, to excite gas flowing through the bore of the insert into a plasma. The invention is particularly useful as an exhaust scrubber for oxidizing exhaust gases from a semiconductor processing chamber. A catalyst may be embedded in the porous insert to promote the scrubbing reaction. The invention may also be used in an applicator of a remote plasma source.
摘要翻译： 一种等离子体管，包括真空密封陶瓷外管，设置在外管内壁上的多孔陶瓷插入件和高频辐射源，例如缠绕在管上的RF线圈，以激发流过 将插入孔插入等离子体。 本发明特别可用作用于氧化来自半导体处理室的废气的排气洗涤器。 催化剂可以嵌入多孔插入物中以促进洗涤反应。 本发明也可以用于远程等离子体源的施加器中。
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公开(公告)号：US06673323B1
公开(公告)日：2004-01-06
申请号：US09535461
申请日：2000-03-24
IPC分类号： B01D4700
CPC分类号： B01D53/70 , B01D53/34 , C23C16/4412
摘要： A method for reducing hazardous gases exhausted from a process chamber includes an effluent gas treatment system with a gas energizing reactor and an additive gas source. Additive gas comprising reactive gas is introduced into the effluent from the process chamber in a volumetric flow rate in relation to the hazardous gas content in the effluent.
摘要翻译： 用于减少从处理室排出的有害气体的方法包括具有气体激励反应器和添加气体源的废气处理系统。 包含反应性气体的添加剂气体以相对于流出物中的有害气体含量的体积流量被引入来自处理室的流出物中。
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5.发明授权Heated catalytic treatment of an effluent gas from a substrate fabrication process 有权对基板制造工艺中的废气进行加热催化处理公开(公告)号：US06824748B2
公开(公告)日：2004-11-30
申请号：US09872254
申请日：2001-06-01
申请人： Tony S. Kaushal , Shamouil Shamouilian , Harshad Borgaonkar , Kwok Manus Wong , Michael G. Chafin , Ashish Bhatnagar
发明人： Tony S. Kaushal , Shamouil Shamouilian , Harshad Borgaonkar , Kwok Manus Wong , Michael G. Chafin , Ashish Bhatnagar
IPC分类号： F28D2100
CPC分类号： H01J37/32844 , B01D53/8662 , B01D53/885 , B01J19/12 , B01J19/129 , B01J2219/0809 , B01J2219/083 , B01J2219/0835 , B01J2219/0871 , B01J2219/0875 , B01J2219/0892 , C23C16/4412 , H01J37/3244 , Y02C20/30
摘要： A substrate processing apparatus has a process chamber with a substrate support, a gas supply to introduce a gas into the chamber, and a gas energizer to energize the gas in the processing of a substrate, thereby generating an effluent gas. A catalytic reactor has an effluent gas inlet to receive the effluent gas and an effluent gas outlet to exhaust treated effluent gas. A heater is adapted to heat the effluent gas in the catalytic reactor. The heated catalytic treatment of the effluent gas abates the hazardous gases in the effluent. An additive gas source and a prescrubber may also be used to further treat the effluent.
摘要翻译： 基板处理装置具有具有基板支撑件的处理室，向室内引入气体的气体供给部，以及在基板的加工中使气体通电的气体增压器，从而产生流出气体。 催化反应器具有用于接收废气的废气入口和用于排出经处理的废气的废气出口。 加热器适于加热催化反应器中的废气。 流出气体的加热催化处理减少流出物中的有害气体。 还可以使用添加气体源和预饱和物来进一步处理流出物。
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公开(公告)号：US06468490B1
公开(公告)日：2002-10-22
申请号：US09607918
申请日：2000-06-29
IPC分类号： B01D5368
CPC分类号： C23C16/4412 , B01D53/75 , B01D53/8659 , B01D53/8662
摘要： An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.
摘要翻译： 可用于消除从处理室35排出的流出物（例如来自CVD室清洁过程）的二氧化碳气体含量的流出物消除系统200包括催化反应器250，以减少流出物100中的F2含量。系统 可以进一步包括预催化剂230以在催化反应器250中处理之前向流出物100中添加反应性气体和/或处理流出物100.可以通过气体源220将反应性气体加入到流出物100中。
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7.发明授权Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas 失效半导体器件制造室清洗方法和清洁气体再循环的设备公开(公告)号：US06863019B2
公开(公告)日：2005-03-08
申请号：US10159794
申请日：2002-05-30
申请人： Shamouil Shamouilian , Canfeng Lai , Michael Santiago Cox , Padmanabhan Krishnaraj , Tsutomu Tanaka , Sebastien Raoux , Peter I. Porshnev , Thomas Nowak
发明人： Shamouil Shamouilian , Canfeng Lai , Michael Santiago Cox , Padmanabhan Krishnaraj , Tsutomu Tanaka , Sebastien Raoux , Peter I. Porshnev , Thomas Nowak
IPC分类号： B08B7/00 , C23C16/44 , C23C16/452 , C23C16/455 , H01J37/32 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： B08B7/0035 , B08B7/00 , C23C16/4405 , C23C16/452 , C23C16/45593 , H01J37/3244 , H01J37/32844 , H01J2237/335 , Y02C20/30
摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.
摘要翻译： 清洁半导体制造处理室的方法包括清洁气体组分的再循环。 因此，有效地利用输入清洁气体，并且减少不期望的排放。 该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。 该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。
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8.发明授权Electrostatic chuck having composite dielectric layer and method of manufacture 有权具有复合介电层的静电吸盘及其制造方法公开(公告)号：US06721162B2
公开(公告)日：2004-04-13
申请号：US10095914
申请日：2002-03-12
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.
摘要翻译： 静电吸盘具有能够带电的电极，以静电保持基板。 复合层覆盖电极。 复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成 材料。 卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。
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公开(公告)号：US06503368B1
公开(公告)日：2003-01-07
申请号：US09607533
申请日：2000-06-29
申请人： Arnold Kholodenko , Vijay Parkhe , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser
发明人： Arnold Kholodenko , Vijay Parkhe , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser
IPC分类号： C23C1600
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01J2237/2001
摘要： A substrate support 55 comprises first, second and third sections 88, 90, 92 connected to one another by first and second bonds 106, 108, one of the sections comprises a surface 75 adapted to receive a substrate 25. The first bond 106 comprises a first bonding material and the second bond 108 comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.
摘要翻译： 衬底支撑件55包括通过第一和第二键106,108彼此连接的第一，第二和第三部分88,90,92，其中一个部分包括适于接收衬底25的表面75.第一结合106包括 第一接合材料和第二接合108包括第二接合材料。 在一个版本中，第一接合材料能够在被加热到第一温度时粘合表面，并且第二接合材料能够在被加热到第二温度时粘合表面。
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公开(公告)号：US06310755B1
公开(公告)日：2001-10-30
申请号：US09307215
申请日：1999-05-07
申请人： Arnold Kholodenko , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Ananda H. Kumar
发明人： Arnold Kholodenko , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Ananda H. Kumar
IPC分类号： H01G2300
CPC分类号： C04B35/565 , C04B35/185 , C04B35/806 , C04B37/006 , C04B37/026 , C04B41/009 , C04B41/5155 , C04B41/88 , C04B2235/402 , C04B2235/5248 , C04B2235/616 , C04B2235/96 , C04B2235/9607 , C04B2237/121 , C04B2237/343 , C04B2237/365 , C04B2237/366 , C04B2237/405 , C04B2237/60 , C22C29/00 , C22C2204/00 , H01L21/67109 , H01L21/6831 , H01L21/6833 , C04B38/00 , C04B41/4523
摘要： An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.
摘要翻译： 静电吸盘55具有静电构件100，静电构件100包括具有适于接纳衬底30的表面120的电介质115.电介质115覆盖电极105，电极105可充电以静电保持衬底30.静电构件100下方的支撑件190具有 空腔300适于保持气体以用作热绝缘体，以调节从静电卡盘55到腔室25的表面120的热量流动。空腔300具有截面轮廓，其形状设置成提供预定的 跨越衬底30的温度分布。
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