公开(公告)号：US11316061B2

公开(公告)日：2022-04-26

申请号：US17071647

申请日：2020-10-15

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Takeshi Kamikawa ,  Masatomi Harada ,  Toshihiko Sakai ,  Tokuaki Kuniyoshi ,  Liumin Zou

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/0747 ,  H01L31/0216 ,  H02S40/34 ,  H02S40/38 ,  H01L31/048 ,  H02S50/00

Abstract: n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).

公开(公告)号：US20210050467A1

公开(公告)日：2021-02-18

申请号：US17071647

申请日：2020-10-15

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Takeshi Kamikawa ,  Masatomi Harada ,  Toshihiko Sakai ,  Tokuaki Kuniyoshi ,  Liumin Zou

IPC: H01L31/0747 ,  H01L31/0224 ,  H01L31/0216 ,  H02S40/34 ,  H02S40/38 ,  H01L31/0376 ,  H01L31/048 ,  H02S50/00

Abstract: n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).

公开(公告)号：US10658526B2

公开(公告)日：2020-05-19

申请号：US15738107

申请日：2016-02-24

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Masatomi Harada ,  Kenichi Higashi ,  Takeshi Kamikawa ,  Toshihiko Sakai ,  Tokuaki Kuniyoshi ,  Kazuya Tsujino ,  Liumin Zou

IPC: H01L31/0224 ,  H01L31/0747 ,  H01L31/0376 ,  H01L31/0745 ,  H01L31/05

Abstract: In a photovoltaic device (1), first amorphous semiconductor portions (102n) and second amorphous semiconductor portions (102p) are provided alternately on one of faces of a semiconductor substrate (101). Each first amorphous semiconductor portion (102n) has at least one first amorphous semiconductor strip (1020n), and each second amorphous semiconductor portion (102p) has at least one second amorphous semiconductor strip (1020p). A plurality of first electrodes (103n) are provided spaced apart from each other on each first amorphous semiconductor strip (1020n), and a plurality of second electrodes (103p) are provided spaced apart from each other on each second amorphous semiconductor strip (1020p).

公开(公告)号：US10134928B2

公开(公告)日：2018-11-20

申请号：US15116926

申请日：2015-01-20

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Masatomi Harada ,  Takeshi Kamikawa ,  Kazuya Tsujino ,  Naoki Koide ,  Naoki Asano ,  Yuta Matsumoto

IPC: H01L31/0236 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/18 ,  H01L31/20

Abstract: There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (1). The n-type single crystal silicon substrate (1) includes a central region (11) and an end-portion region (12). The central region (11) is a region which has the same central point as the central point of the n-type single crystal silicon substrate (1) and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (1). The central region (11) has a thickness t1. The end-portion region (12) is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (1). The end-portion region (12) is disposed on an outside of the central region (11) in an in-plane direction of the n-type single crystal silicon substrate (1), and has a thickness t2 which is thinner than the thickness t1. The end-portion region (12) has average surface roughness which is smaller than average surface roughness of the central region (11).

公开(公告)号：US09660413B2

公开(公告)日：2017-05-23

申请号：US14881523

申请日：2015-10-13

Applicant: Sharp Kabushiki Kaisha

Inventor： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

IPC: H01L33/00 ,  H01S5/00 ,  H01S5/028 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01L33/44

CPC classification number: H01S5/0287 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/221 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00

Abstract: A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

公开(公告)号：US09437787B2

公开(公告)日：2016-09-06

申请号：US14361216

申请日：2013-05-29

Applicant: Sharp Kabushiki Kaisha

Inventor： Takeshi Kamikawa

IPC: H01L33/00 ,  H01L33/50 ,  H01L23/00 ,  H01L33/56 ,  H01L33/60 ,  H01L33/48 ,  H01L33/64

CPC classification number: H01L33/502 ,  H01L24/29 ,  H01L33/483 ,  H01L33/507 ,  H01L33/56 ,  H01L33/60 ,  H01L33/641 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element including a transparent substrate; a reflective substrate on which the semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing the semiconductor light emitting element on the reflective substrate; and a sealing member containing a fluorescent substance, for sealing the semiconductor light emitting element. In the semiconductor light emitting device, the adhesive layer has a thickness equal to or smaller than average particle size of the fluorescent substance contained in the sealing member.

Abstract translation: 半导体发光器件包括：包括透明衬底的半导体发光元件; 安装半导体发光元件的反射基板; 含有荧光体的粘合剂层，用于将半导体发光元件固定在反射基板上; 以及含有荧光体的密封构件，用于密封半导体发光元件。 在半导体发光器件中，粘合剂层的厚度等于或小于包含在密封元件中的荧光物质的平均粒度。

公开(公告)号：US11227966B2

公开(公告)日：2022-01-18

申请号：US15302644

申请日：2015-04-03

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Masatomi Harada ,  Toshihiko Sakai ,  Rihito Suganuma ,  Kazuya Tsujino ,  Tokuaki Kuniyoshi ,  Takeshi Kamikawa

IPC: H01L31/075 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/0376

Abstract: Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8×1017 cm−3 or more, and is lower than the dopant concentration of the first concentration layer.

公开(公告)号：US10293368B2

公开(公告)日：2019-05-21

申请号：US15567589

申请日：2016-02-24

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Toshihiko Sakai ,  Takeshi Kamikawa ,  Masatomi Harada ,  Tokuaki Kuniyoshi ,  Liumin Zou

IPC: C23C14/04 ,  B05D3/04 ,  C23C14/50 ,  C23C16/04 ,  C23C16/44 ,  H01L21/56 ,  H01L21/67 ,  H01L31/20

Abstract: A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrate 30 and a member 31 in contact with one surface of the substrate is stacked, and the substrate 30 and the member 31 in contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrate 30 and the member 31 in contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate 30.

公开(公告)号：US20140353705A1

公开(公告)日：2014-12-04

申请号：US14370034

申请日：2013-03-07

Applicant: Sharp Kabushiki Kaisha

Inventor： Takeshi Kamikawa ,  Masaaki Katoh ,  Tetsuya Hanamoto

IPC: H01L33/58 ,  H01L21/78 ,  H01L33/00 ,  H01L21/268 ,  H01L33/64 ,  H01L33/42

CPC classification number: H01L33/58 ,  H01L21/268 ,  H01L21/78 ,  H01L33/005 ,  H01L33/007 ,  H01L33/025 ,  H01L33/42 ,  H01L33/64 ,  H01L33/641 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0058 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor light emitting element includes a transparent substrate that transmits light emitted from said semiconductor light emitting element and a multi-layered structure formed on the transparent substrate. The multi-layered structure includes a semiconductor multi-layered film consisting of an n-type layer, an MQW light emitting layer and a p-type layer. The transparent substrate includes a light scattering structure formed in the transparent substrate for scattering the light that entered the substrate.

Abstract translation: 半导体发光元件包括透射从所述半导体发光元件发射的光的透明基板和形成在透明基板上的多层结构。 多层结构包括由n型层，MQW发光层和p型层构成的半导体多层膜。 透明基板包括形成在透明基板中的用于散射进入基板的光的光散射结构。

公开(公告)号：US20140353704A1

公开(公告)日：2014-12-04

申请号：US14361216

申请日：2013-05-29

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Takeshi Kamikawa

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/56

CPC classification number: H01L33/502 ,  H01L24/29 ,  H01L33/483 ,  H01L33/507 ,  H01L33/56 ,  H01L33/60 ,  H01L33/641 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor light emitting device includes: a semiconductor light emitting element including a transparent substrate; a reflective substrate on which the semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing the semiconductor light emitting element on the reflective substrate; and a sealing member containing a fluorescent substance, for sealing the semiconductor light emitting element. In the semiconductor light emitting device, the adhesive layer has a thickness equal to or smaller than average particle size of the fluorescent substance contained in the sealing member.

Abstract translation: 半导体发光器件包括：包括透明衬底的半导体发光元件; 安装半导体发光元件的反射基板; 含有荧光体的粘合剂层，用于将半导体发光元件固定在反射基板上; 以及含有荧光体的密封构件，用于密封半导体发光元件。 在半导体发光器件中，粘合剂层的厚度等于或小于包含在密封元件中的荧光物质的平均粒度。