公开(公告)号：US6070552A

公开(公告)日：2000-06-06

申请号：US022880

申请日：1998-02-12

申请人： Shigeru Mizuno ,  Masahito Ishihara ,  Yoichiro Numasawa ,  Nobuyuki Takahashi

发明人： Shigeru Mizuno ,  Masahito Ishihara ,  Yoichiro Numasawa ,  Nobuyuki Takahashi

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/45502 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32862

摘要： A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.

摘要翻译： 基板处理装置包括装备有基板保持器和面向基板保持器的气体供给电极的反应器，用于泵出反应器内部的泵机构，用于将反应气体通过气体供给电极引入的反应气体供给机构 所述反应器的内部，用于向所述气体供给电极施加高频电力的高频电源，形成在所述反应器的侧壁中的连接端口，所述泵机构连接到形成在所述反应器的侧壁中的连接端口 并且设置气体供给电极和衬底保持器之间的空间，使得气体供给电极和衬底保持器之间的电导低于反应器的侧壁和气体馈送电极之间的电导。

公开(公告)号：US5956616A

公开(公告)日：1999-09-21

申请号：US863298

申请日：1997-05-27

申请人： Shigeru Mizuno ,  Manabu Tagami ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Masahito Ishihara ,  Kiyoshi Nashimoto ,  Nobuyuki Takahashi

发明人： Shigeru Mizuno ,  Manabu Tagami ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Masahito Ishihara ,  Kiyoshi Nashimoto ,  Nobuyuki Takahashi

IPC分类号： C23C16/34 ,  C23C16/42 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28556

摘要： A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.

摘要翻译： 提供了通过等离子体增强CVD在衬底上沉积薄膜的方法。 该方法包括将H2或H2和N2引入等离子体增强型CVD反应器中; 在反应器中产生等离子体; 将包含TiCl 4，硅烷，以及H 2或H 2和N 2的反应气体引入反应器中; 并在反应器中在衬底上沉积含有Si的Ti膜或TiN膜。

公开(公告)号：US6059985A

公开(公告)日：2000-05-09

申请号：US826735

申请日：1997-04-04

申请人： Takanori Yoshimura ,  Shigeru Mizuno ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Nobuyuki Takahashi

发明人： Takanori Yoshimura ,  Shigeru Mizuno ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Nobuyuki Takahashi

IPC分类号： H01L21/28 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/68

CPC分类号： H01L21/0209

摘要： A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.

摘要翻译： 处理基板的方法具有以下处理。 在通过CVD法将薄膜沉积到基板上之后，使基板的前表面靠近气体供给机构的气体供给表面，使其具有期望的间隔而不会在前表面和气体供给表面之间接触。 然后，将蚀刻气体供给到基板的后部空间中以在其中产生等离子体，并且还将吹扫气体供应到气体供给表面和基板之间的空间中，使得净化气体通过 衬底的周边边缘区域。 这种净化气体防止包括在等离子体中的自由基扩散到气体供应表面和基底之间的空间中。

公开(公告)号：US6016765A

公开(公告)日：2000-01-25

申请号：US905767

申请日：1997-08-04

申请人： Yoichiro Numasawa ,  Shinya Hasegawa ,  Tsutomu Tsukada ,  Nobuyuki Takahashi

发明人： Yoichiro Numasawa ,  Shinya Hasegawa ,  Tsutomu Tsukada ,  Nobuyuki Takahashi

IPC分类号： H05H1/46 ,  C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  C23C16/507 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32467

摘要： A plasma processing apparatus is furnished with a reactor which is furnished with a susceptor 12, a reaction gas delivery mechanism which delivers reaction gas to the inside of the reactor, a pumping mechanism 24 which pumps out an interior of the reactor, and a plasma-generating mechanism. The reactor is made of metal, the plasma-generating mechanism includes an at least single-winding coil 16 which produces an induced electric field, and the coil is established within the reactor and surrounding the plasma-generating space in a state surrounded by dielectrics parts 15 and 17.

摘要翻译： 等离子体处理装置配备有反应器，该反应器具有基座12，将反应气体输送到反应器内部的反应气体输送机构，泵出反应器内部的泵送机构24， 生成机制。 反应器由金属制成，等离子体产生机构包括产生感应电场的至少单绕组线圈16，并且线圈建立在反应器内并围绕等离子体产生空间围绕电介质部分 15和17。

公开(公告)号：US20080230781A1

公开(公告)日：2008-09-25

申请号：US12152944

申请日：2008-05-19

申请人： Yoichiro Numasawa ,  Yukinobu Murao

发明人： Yoichiro Numasawa ,  Yukinobu Murao

IPC分类号： H01L21/20 ,  H01L49/02

CPC分类号： C23C16/24 ,  C23C16/56 ,  Y10S977/814

摘要： A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate.Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.

摘要翻译： 在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成 在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。 此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理 硅膜形成在基板上。 因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。 根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以 可以轻松，低成本地生产。

公开(公告)号：US20060276055A1

公开(公告)日：2006-12-07

申请号：US10645908

申请日：2003-08-22

申请人： Yoichiro Numasawa ,  Yukinobu Murao

发明人： Yoichiro Numasawa ,  Yukinobu Murao

IPC分类号： H01L21/00

CPC分类号： C23C16/24 ,  C23C16/56 ,  Y10S977/814

摘要： A substrate is set at a predetermined temperature in a plasma treatment chamber, then the inside of the plasma treatment chamber is regulated at a reduced pressure containing at least a silicon hydride gas and a hydrogen gas, a high-frequency electric field is applied to form a silicon film of nanometer scale thickness composed of fine silicon crystals and amorphous silicon on the substrate. Thereafter, application of the high-frequency electric field is terminated, then the inside of the plasma treatment chamber is replaced by an oxidizing or nitriding gas, and a high-frequency electric field is applied again for plasma oxidizing treatment or plasma nitriding treatment of the silicon film formed on the substrate. Thereby, a silicon nanocrystalline structure can be formed on a silicon substrate by using a process of producing silicon integrated circuits with achieving high luminous efficiency, and terminating reliably with oxygen or nitrogen on the surface thereof. According to the method of the present invention, the particle diameter of the oxygen- or nitrogen-terminated silicon nanocrystals can be regulated in an accuracy of 1 to 2 nm, the density thereof per unit area can be increased, and the silicon nanocrystalline structure can be produced easily and inexpensively.

摘要翻译： 在等离子体处理室中将衬底设定在预定温度，然后等离子体处理室的内部被调节至少包含氢化硅气体和氢气的减压，施加高频电场以形成 在衬底上由精细硅晶体和非晶硅组成的纳米级厚度的硅膜。 此后，终止施加高频电场，然后用氧化或氮化气体代替等离子体处理室的内部，再次施加高频电场进行等离子体氧化处理或等离子体氮化处理 硅膜形成在基板上。 因此，可以通过使用具有实现高发光效率的硅集成电路的制造工艺，在其表面上用氧气或氮气可靠地终止在硅衬底上形成硅纳米晶体结构。 根据本发明的方法，氧或氮封端的硅纳米晶体的粒径可以以1〜2nm的精度进行调节，每单位面积的密度可以增加，并且硅纳米晶体结构可以 可以轻松，低成本地生产。

公开(公告)号：US06664496B2

公开(公告)日：2003-12-16

申请号：US10107304

申请日：2002-03-28

申请人： Yoshimi Watabe ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Yukito Nakagawa

发明人： Yoshimi Watabe ,  Shinya Hasegawa ,  Yoichiro Numasawa ,  Yukito Nakagawa

IPC分类号： B23K900

CPC分类号： H01J37/32082

摘要： A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.

公开(公告)号：US20090095217A1

公开(公告)日：2009-04-16

申请号：US12289742

申请日：2008-11-03

申请人： Yoichiro Numasawa ,  Yoshimi Watabe

发明人： Yoichiro Numasawa ,  Yoshimi Watabe

IPC分类号： C23C16/52

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32568 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

摘要： A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.

摘要翻译： 等离子体处理装置具有设置有顶部电极（13）和底部电极（14）的反应容器（11），并且从VHF频带高频电源（32）向第一电极提供VHF频带高频功率 ），而在其上载置基板（12）并通过垂直移动机构移动的底部电极。 等离子体处理系统具有控制器（36），其在基板（12）上形成膜之后进行清洁处理时控制垂直移动机构以移动底部电极以使顶部电极和底部之间的间隙变窄 电极并形成狭窄的空间，并在该狭窄空间中通过预定的高密度等离子体开始清洁。 在清洁过程中，执行步骤清洁。 由此，清洁气体的利用效率提高，排气量被切断，清洗速度提高。 此外，所使用的处理气体的量被切断，并且工艺成本降低。

公开(公告)号：US08002947B2

公开(公告)日：2011-08-23

申请号：US12289742

申请日：2008-11-03

申请人： Yoichiro Numasawa ,  Yoshimi Watabe

发明人： Yoichiro Numasawa ,  Yoshimi Watabe

IPC分类号： B08B7/04 ,  B08B9/00

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32568 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

摘要： A plasma treatment apparatus has a reaction vessel (11) provided with a top electrode (13) and a bottom electrode (14), and the first electrode is supplied with a VHF band high frequency power from a VHF band high frequency power source (32), while the bottom electrode on which a substrate (12) is loaded and is moved by a vertical movement mechanism. The plasma treatment system has a controller (36) which, at the time of a cleaning process after forming a film on the substrate (12), controls a vertical movement mechanism to move the bottom electrode to narrow the gap between the top electrode and bottom electrode and form a narrow space and starts cleaning by a predetermined high density plasma in that narrow space. In the cleaning process, step cleaning is performed. Due to this, the efficiency of utilization of the cleaning gas is increased, the amount of exhaust gas is cut, and the cleaning speed is raised. Further, the amount of the process gas used is cut and the process cost is reduced.

摘要翻译： 等离子体处理装置具有设置有顶部电极（13）和底部电极（14）的反应容器（11），并且从VHF频带高频电源（32）向第一电极提供VHF频带高频功率 ），而在其上载置基板（12）并通过垂直移动机构移动的底部电极。 等离子体处理系统具有控制器（36），其在基板（12）上形成膜之后进行清洁处理时控制垂直移动机构以移动底部电极以使顶部电极和底部之间的间隙变窄 电极并形成狭窄的空间，并在该狭窄空间中通过预定的高密度等离子体开始清洁。 在清洁过程中，执行步骤清洁。 由此，清洁气体的利用效率提高，排气量被切断，清洗速度提高。 此外，所使用的处理气体的量被切断，并且工艺成本降低。

公开(公告)号：US07666763B2

公开(公告)日：2010-02-23

申请号：US12128465

申请日：2008-05-28

申请人： Yukinobu Murao ,  Akira Kumagai ,  Yoichiro Numasawa

发明人： Yukinobu Murao ,  Akira Kumagai ,  Yoichiro Numasawa

IPC分类号： H01L21/20

CPC分类号： H01L27/1203 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/84 ,  H01L29/04 ,  H01L29/4925 ,  H01L29/66666 ,  H01L29/7827 ,  Y10S977/89 ,  Y10S977/936

摘要： This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate.

摘要翻译： 本发明提供了一种能够独立于衬底浓度来控制MOS晶体管的阈值电压的衬底结构，并且容易抑制由通道长度减小引起的短沟道效应。 在硅衬底的表面的氧化硅膜上形成由具有相同粒径的纳米硅粒子形成的第一纳米硅膜。 在第一纳米硅膜上形成氮化硅膜。 然后，形成平均粒径与第一纳米硅膜不同的第二纳米硅膜。 在这样制造的纳米硅半导体衬底上形成半导体电路器件。