Method of manufacturing a liquid crystal display device
    1.
    发明授权
    Method of manufacturing a liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号:US07362408B2

    公开(公告)日:2008-04-22

    申请号:US11274263

    申请日:2005-11-16

    IPC分类号: G02F1/1341

    CPC分类号: G02F1/1341 G02F1/141

    摘要: A smectic liquid crystal, typically, ferroelectric liquid crystal is uniformly orientated as follows: a space is provided as a dummy region in an area outside a panel region where a liquid crystal inlet is placed; two substrates are overlapped and cut into panels of a desired size, leaving the panel region and the dummy region whereas the rest is cut off; a liquid crystal is injected with the dummy region left in the liquid crystal inlet portion; and, immediately after the liquid crystal is injected, the dummy region is cut off to carry out monostabilization treatment.

    摘要翻译: 典型地,铁电液晶的层状液晶如下均匀取向:在放置液晶入口的面板区域外的区域中设置空间作为虚拟区域; 两个基板重叠并切割成所需尺寸的面板,留下面板区域和虚拟区域,而其余的被切断; 注入残留在液晶入口部分的虚拟区域的液晶; 在注入液晶之后,切断虚拟区域进行单稳态化处理。

    Method of manufacturing a liquid crystal display device
    2.
    发明授权
    Method of manufacturing a liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号:US06975380B2

    公开(公告)日:2005-12-13

    申请号:US10614224

    申请日:2003-07-08

    IPC分类号: G02F1/1341 G02F1/141

    CPC分类号: G02F1/1341 G02F1/141

    摘要: A smectic liquid crystal, typically, ferroelectric liquid crystal is uniformly orientated as follows: a space is provided as a dummy region in an area outside a panel region where a liquid crystal inlet is placed; two substrates are overlapped and cut into panels of a desired size, leaving the panel region and the dummy region whereas the rest is cut off; a liquid crystal is injected with the dummy region left in the liquid crystal inlet portion; and, immediately after the liquid crystal is injected, the dummy region is cut off to carry out monostabilization treatment.

    摘要翻译: 典型地,铁电液晶的层状液晶如下均匀取向:在放置液晶入口的面板区域外的区域中设置空间作为虚拟区域; 两个基板重叠并切割成所需尺寸的面板,留下面板区域和虚拟区域,而其余的被切断; 注入残留在液晶入口部分的虚拟区域的液晶; 在注入液晶之后,切断虚拟区域进行单稳态化处理。

    Method of manufacturing a liquid crystal display device
    3.
    发明申请
    Method of manufacturing a liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号:US20060066724A1

    公开(公告)日:2006-03-30

    申请号:US11274263

    申请日:2005-11-16

    IPC分类号: H04N17/00

    CPC分类号: G02F1/1341 G02F1/141

    摘要: A smectic liquid crystal, typically, ferroelectric liquid crystal is uniformly orientated as follows: a space is provided as a dummy region in an area outside a panel region where a liquid crystal inlet is placed; two substrates are overlapped and cut into panels of a desired size, leaving the panel region and the dummy region whereas the rest is cut off; a liquid crystal is injected with the dummy region left in the liquid crystal inlet portion; and, immediately after the liquid crystal is injected, the dummy region is cut off to carry out monostabilization treatment.

    摘要翻译: 典型地,铁电液晶的层状液晶如下均匀取向:在放置液晶入口的面板区域外的区域中设置空间作为虚拟区域; 两个基板重叠并切割成所需尺寸的面板,留下面板区域和虚拟区域,而其余的被切断; 注入残留在液晶入口部分的虚拟区域的液晶; 在注入液晶之后,切断虚拟区域进行单稳态化处理。

    Semiconductor device and manufacturing method of the same
    5.
    发明授权
    Semiconductor device and manufacturing method of the same 有权
    半导体器件及其制造方法相同

    公开(公告)号:US08803298B2

    公开(公告)日:2014-08-12

    申请号:US13354635

    申请日:2012-01-20

    IPC分类号: H01L23/02

    摘要: With the use of a conductive shield formed on the top or bottom side of a semiconductor integrated circuit, an electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge is prevented, and sufficient communication capability is obtained. With the use of a pair of insulators which sandwiches the semiconductor integrated circuit, a highly reliable semiconductor device that is reduced in thickness and size and has resistance to an external stress can be provided. A semiconductor device can be manufactured with high yield while defects of shapes and characteristics due to an external stress or electrostatic discharge are prevented in the manufacturing process.

    摘要翻译: 通过使用形成在半导体集成电路的顶部或底部的导电屏蔽,防止由静电放电引起的半导体集成电路的静电击穿(电路的故障或半导体元件的损坏),并且充分的通信 获得能力。 通过使用夹持半导体集成电路的一对绝缘体,可以提供厚度和尺寸减小并且具有耐外部应力的高度可靠的半导体器件。 可以以高产率制造半导体器件,同时在制造过程中防止由外部应力或静电放电引起的形状和特性的缺陷。

    Semiconductor device and method for manufacturing the same
    7.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08133749B2

    公开(公告)日:2012-03-13

    申请号:US12429201

    申请日:2009-04-24

    申请人: Shingo Eguchi

    发明人: Shingo Eguchi

    IPC分类号: H01L21/84

    摘要: In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.

    摘要翻译: 在夹在一对第一耐冲击层和第二耐冲击层之间的半导体集成电路中,在半导体集成电路和第二耐冲击层之间设置有冲击扩散层。 通过针对外部应力设置抗冲击层和用于扩散冲击的冲击扩散层,减小了施加到每单位面积的半导体集成电路的力,从而保护了半导体集成电路。 冲击扩散层优选具有低的弹性模量和高的断裂模量。