公开(公告)号：US5025751A

公开(公告)日：1991-06-25

申请号：US366185

申请日：1989-06-14

申请人： Shinichiro Takatani ,  Shigeo Goto ,  Masahiko Kawata ,  Kenji Hiruma

发明人： Shinichiro Takatani ,  Shigeo Goto ,  Masahiko Kawata ,  Kenji Hiruma

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14

CPC分类号： C23C16/4551 ,  C30B25/02 ,  C30B25/14 ,  C30B29/40 ,  Y10S148/169

摘要： A solid film forming apparatus, e.g., an MO-MBE (Metal-Organic Molecular Beam Epitaxy) apparatus, wherein evacuatable containers isolated from a growth chamber by a switching device and connected to raw material gas introduction pipings are provided between the growth chamber for a solid film, e.g., a compound semiconductor, and raw material gas introduction pipings. Growth of the solid film is controlled by opening and closing the switching device and evacuating the container at least while the switching device is closed during the growth of the solid film. An undesired influence on the growing film due to residual gas in the containers which are not used for growth can be prevented and, hence, interception and introduction of the raw material gas into the growth chamber can be performed with remarkably high controllability, and films of superior abruptness of the interface between films, e.g., the heterojunction of the compound semiconductor, can be obtained.

摘要翻译： 一种固体成膜装置，例如MO-MBE（金属有机分子束外延）装置，其中通过开关装置从生长室隔离并连接到原料气体导入管的可排出容器设置在生长室之间用于 固体膜，例如化合物半导体和原料气体导入管。 至少在固体膜生长期间开关装置关闭时，通过打开和关闭开关装置并抽出容器来控制固体膜的生长。 可以防止由于不用于生长的容器中的残留气体对生长的膜产生不期望的影响，因此可以以非常高的可控性进行原料气体截留和引入生长室，并且可以进行膜的 可以获得膜之间的界面的优异的突变性，例如化合物半导体的异质结。

公开(公告)号：US5381027A

公开(公告)日：1995-01-10

申请号：US134622

申请日：1993-10-12

申请人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

发明人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

IPC分类号： H01L21/18 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L27/06 ,  H01L29/737 ,  H01L29/778 ,  H01L29/804 ,  H01L29/784

CPC分类号： H01L29/66318 ,  H01L21/182 ,  H01L21/28587 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/7373 ,  H01L29/7787

摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by intoduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.

摘要翻译： 本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。 前者通过应用于其源极和漏极区域的形成来制造通过诸如通过离子注入引起杂质的异质结的紊乱或通过形成由 选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。 后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。 这些半导体器件可以降低源极栅极电阻和寄生基极电阻。 本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

公开(公告)号：US5258631A

公开(公告)日：1993-11-02

申请号：US884878

申请日：1992-05-18

申请人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

发明人： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

IPC分类号： H01L21/18 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L27/06 ,  H01L29/737 ,  H01L29/778 ,  H01L29/06 ,  H01L29/167 ,  H01L29/30 ,  H01L31/072

CPC分类号： H01L29/66318 ,  H01L21/182 ,  H01L21/28587 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/7373 ,  H01L29/7787

摘要： This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by introduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.

摘要翻译： 本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。 前者通过应用其源极和漏极区域的形成来制造通过引入杂质例如通过离子注入引起异质结的紊乱的技术或通过形成由 选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。 后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。 这些半导体器件可以降低源极栅极电阻和寄生基极电阻。 本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

公开(公告)号：US5373191A

公开(公告)日：1994-12-13

申请号：US998856

申请日：1992-12-30

申请人： Toshiyuki Usagawa ,  Yoshinori Imamura ,  Hidekazu Okuhira ,  Shigeo Goto ,  Masayoshi Kobayashi ,  Shinichiro Takatani

发明人： Toshiyuki Usagawa ,  Yoshinori Imamura ,  Hidekazu Okuhira ,  Shigeo Goto ,  Masayoshi Kobayashi ,  Shinichiro Takatani

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L21/60 ,  H01L21/8252 ,  H01L23/485 ,  H01L29/812 ,  H01L29/80 ,  H01L23/48 ,  H01L29/06 ,  H01L29/48

CPC分类号： H01L21/76897 ,  H01L21/28587 ,  H01L21/8252 ,  H01L23/485 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/66871 ,  H01L29/66924 ,  H01L29/8128 ,  H01L2924/0002

摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.

摘要翻译： 具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。 源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。 通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容 并且有利地增加源极栅极击穿电压。 上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。 这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

公开(公告)号：US5181087A

公开(公告)日：1993-01-19

申请号：US340471

申请日：1989-04-19

申请人： Toshiyuki Usagawa ,  Yoshinori Imamura ,  Hidekazu Okuhira ,  Shigeo Goto ,  Masayoshi Kobayashi ,  Shinichiro Takatani

发明人： Toshiyuki Usagawa ,  Yoshinori Imamura ,  Hidekazu Okuhira ,  Shigeo Goto ,  Masayoshi Kobayashi ,  Shinichiro Takatani

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L21/60 ,  H01L21/8252 ,  H01L23/485 ,  H01L29/812

CPC分类号： H01L21/76897 ,  H01L21/28587 ,  H01L21/8252 ,  H01L23/485 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/66871 ,  H01L29/66924 ,  H01L29/8128 ,  H01L2924/0002

摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.

摘要翻译： 具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。 源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。 通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容 并且有利地增加源极栅极击穿电压。 上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。 这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

公开(公告)号：US5351128A

公开(公告)日：1994-09-27

申请号：US919676

申请日：1992-07-27

申请人： Shigeo Goto ,  Hidetoshi Matsumoto ,  Masamitsu Yazawa ,  Yasunari Umemoto ,  Yoko Uchida ,  Kenji Hiruma

发明人： Shigeo Goto ,  Hidetoshi Matsumoto ,  Masamitsu Yazawa ,  Yasunari Umemoto ,  Yoko Uchida ,  Kenji Hiruma

IPC分类号： H01L29/45 ,  H01L29/16 ,  H01L29/205

CPC分类号： H01L29/452

摘要： A field-effect transistor or a bipolar transistor may be provided in which the contact resistance between a channel layer or base layer and a contact layer are reduced. For example, an InGaAs buffer layer may be formed on the substrate side of an InGaAs channel layer of a field-effect transistor and by the bypassing effect that carriers pass through this InGaAs buffer layer, the InGaAs channel layer comes in contact with the contact layer with a low resistance. The contact resistance between the InGaAs channel layer and the contact layer can be reduced to 10 ohm per a width of 10.mu.m, and as a result, the value of transconductance factor K of a field-effect transistor can be increased in 14 mA/V.sup.2 per a width of 10.mu.m.

摘要翻译： 可以提供场效应晶体管或双极晶体管，其中沟道层或基极层与接触层之间的接触电阻降低。 例如，可以在场效应晶体管的InGaAs沟道层的衬底侧上形成InGaAs缓冲层，并且通过载流子通过该InGaAs缓冲层的旁路效应，InGaAs沟道层与接触层接触 具有低阻力。 InGaAs沟道层和接触层之间的接触电阻可以减小到10欧姆，宽度为10微米，结果是场效应晶体管的跨导因子K的值可以增加到14mA / V2宽度为10微米。

公开(公告)号：US5668402A

公开(公告)日：1997-09-16

申请号：US66635

申请日：1993-05-24

申请人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

发明人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

IPC分类号： H01L29/73 ,  A61F7/02 ,  H01L21/20 ,  H01L21/331 ,  H01L21/338 ,  H01L29/04 ,  H01L29/205 ,  H01L29/737 ,  H01L29/812

CPC分类号： H01L29/045 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02609 ,  A61F2007/0265

摘要： A semiconductor device comprises a semiconductor substrate formed by a first single crystalline semiconductor material and semiconductor layers formed on the semiconductor substrate by a second single crystalline semiconductor material doped with an element which can easily surface segregate. The surface of the semiconductor substrate is formed of a crystalline plane substantially equivalent to a facet plane which is formed on the surface of the second single crystalline semiconductor material if the second single crystalline semiconductor material is epitaxially grown with being doped with the element on a (100) plane of the first single crystalline semiconductor material.

摘要翻译： 半导体器件包括由第一单晶半导体材料形成的半导体衬底和通过掺杂有易于表面分离的元件的第二单晶半导体材料形成在半导体衬底上的半导体层。 半导体衬底的表面由与第二单晶半导体材料的表面上形成的小平面基本相同的晶面形成，如果第二单晶半导体材料被外延生长，在第 100）平面的第一单晶半导体材料。

公开(公告)号：US4861403A

公开(公告)日：1989-08-29

申请号：US102884

申请日：1987-09-30

申请人： Keiichi Yoshimi ,  Shigeo Goto ,  Masaaki Asazuma

发明人： Keiichi Yoshimi ,  Shigeo Goto ,  Masaaki Asazuma

IPC分类号： B29D29/08 ,  F16G1/28

CPC分类号： B29D29/08 ,  F16G1/28

摘要： A method of fabricating a rubber double-toothed belt wherein the unvulcanized rubber thereof is firstly heat treated so as to define a first toothed portion of the belt without substantial vulcanization thereof. The preform is then entrained about pulleys and a pair of heated molds engaged with both the toothed portion and the nontoothed outer portion of the belt to place the preform under pressure at a vulcanization temperature for sufficient time to cause the outer rubber portion of the preform to flow outwardly and define the outer teeth of the final belt concurrently with the vulcanization of the double-toothed belt construction. The parameters for controlling the heat treatment to provide the configurational retention without substantial vulcanization of the preform rubber are disclosed.

公开(公告)号：US4589941A

公开(公告)日：1986-05-20

申请号：US696631

申请日：1985-01-30

申请人： Toshihiro Tanaka ,  Keiichi Yoshimi ,  Shigeo Goto

发明人： Toshihiro Tanaka ,  Keiichi Yoshimi ,  Shigeo Goto

IPC分类号： F16G1/28 ,  B29C43/22 ,  B29C70/08 ,  B29C70/46 ,  B29D29/08 ,  B29K21/00 ,  B29K105/10 ,  B29K105/24 ,  B32B31/06

CPC分类号： B29C70/083 ,  B29C43/222 ,  B29C43/228 ,  B29C70/462 ,  B29D29/085 ,  B29C2059/027

摘要： A method of forming a double timing belt wherein a belt preform is firstly formed with teeth on one face thereof. The opposite face of the belt in which the tensile cord is embedded is provided with oppositely projecting teeth in accurate alignment with the teeth of the preform by a successive molding of pluralities of such teeth to the opposite face, with the preform entrained about a pair of adjustably spaced toothed pulleys. Accurate uniform pitch line difference is maintained by providing shims between the mold and belt support during the molding of the second set of teeth to the preform. The mold and support are retained in accurate alignment by cooperating dowels and recesses on the support and mold members. Cooling devices are provided at opposite ends of the mold for preventing full vulcanization of the tooth rubber thereat.

摘要翻译： 一种形成双重同步皮带的方法，其中带状预成型件首先在其一个表面上形成有齿。 其中嵌入有拉伸绳的带的相对面设置有相反突出的齿，其通过将多个这种齿连续模制成相对的面而与预成型体的齿准确对准，预成型件夹带在一对 可调节间隔的带齿皮带轮。 在将第二组牙齿模制到预成型件期间，通过在模具和带支撑件之间提供垫片来保持精确的均匀节距线差异。 模具和支撑件通过在支撑件和模具构件上配合榫钉和凹槽保持准确对准。 冷却装置设置在模具的相对两端，用于防止在其上完全硫化牙齿橡胶。

公开(公告)号：US6086809A

公开(公告)日：2000-07-11

申请号：US121485

申请日：1998-07-23

申请人： Shigeo Goto ,  Yoshiki Matsuura

发明人： Shigeo Goto ,  Yoshiki Matsuura

IPC分类号： B29D29/08 ,  B29C35/00

CPC分类号： B29D29/08

摘要： A method of forming a belt/belt sleeve having a length and teeth spaced lengthwise of the belt/belt sleeve. The method includes the steps of providing a cylindrical cloth having a sewn joint; providing a mold having an axis, a circumference, and a plurality of axially extending grooves spaced around the circumference of the mold; extending the cylindrical cloth around the mold; providing a rod; pressing the rod against the cloth at the sewn joint so as to urge the sewn joint into one of the axially extending grooves; separating the rod from the cloth; and forming at least one belt component around the cloth on the mold after the rod is separated from the cloth.

摘要翻译： 一种形成带/皮带套筒的方法，该皮带/皮带套筒具有长度和齿距皮带/皮带套筒的长度方向。 该方法包括提供具有缝合接头的圆柱形布料的步骤; 提供具有围绕所述模具的圆周间隔开的轴线，圆周和多个轴向延伸的凹槽的模具; 将圆筒布延伸到模具周围; 提供杆; 在缝合接头处将杆压在布上，以将缝合接头推入轴向延伸的一个槽中; 将杆与布分离; 并且在所述杆与所述布分离之后，在所述模具上的所述布周围形成至少一个带组件。