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公开(公告)号：US20100008170A1
公开(公告)日：2010-01-14
申请号：US11919585
申请日：2007-04-20
申请人： Shinya Sato , Makoto Tabata
发明人： Shinya Sato , Makoto Tabata
CPC分类号： G11C29/56 , G11C29/56004
摘要： The disclosure concerns a semiconductor tester for testing a memory under test. The semiconductor tester comprises a pattern generator generating address information on the pages and generating a test pattern; a waveform shaper shaping the test pattern and outputting a test signal based on the shaped test pattern to the memory cells in the page identified by the address information; a comparator comparing a result signal output from the memory under test receiving the test signal with an expectation value; and a bad block memory storing information on a bad block in the memory under test in advance, when the page identified by the address information is included in the bad block, the bad block memory outputting a bad signal used to skip from the address information on the page included in the bad block to the address information on the page included in a next block under test.
摘要翻译： 本公开涉及用于测试被测存储器的半导体测试器。 半导体测试器包括在页面上产生地址信息并生成测试图案的模式发生器; 波形整形器整形所述测试图案，并且将基于所述成形测试图案的测试信号输出到由所述地址信息标识的所述页面中的所述存储器单元; 比较将来自被测存储器的结果信号接收测试信号与期望值进行比较的比较器; 以及坏块存储器，其中，当由所述地址信息识别的页面被包括在所述坏块中时，预先存储有被测试存储器中的坏块的信息，所述坏块存储器输出用于从所述地址信息跳过的坏信号 包含在坏块中的页面包含在下一个被测试块中的页面上的地址信息。
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公开(公告)号：US6154862A
公开(公告)日：2000-11-28
申请号：US91931
申请日：1998-06-24
申请人： Makoto Tabata , Shinya Sato
发明人： Makoto Tabata , Shinya Sato
CPC分类号： G01R31/31935 , G11C29/44 , G11C29/56 , G06F11/2205
摘要： In a failure analysis memory for memory testing apparatus which has a failure data storage part composed of a failure data memory and a first memory control part and a mask data storage part composed of a mask data memory and a second memory control part, when the logical comparison result by the testing apparatus is a failure in the test mode, the first memory control part effects control to generate write enable data and write failure data in the failure data memory at the corresponding address and, in the remove mode, effects control to read out failure data from the failure data memory and provide it to the mask data storage part. In the test mode the second memory control part effects control to provide mask data read out of the mask data memory, as an inhibit signal, to a logic comparator of the memory testing apparatus to inhibit it from making a logical comparison and, in the remove mode, the second memory control part effects control to generate a write enable signal from the failure data read out of the failure data memory and apply it to the mask data memory to write therein mask data at the corresponding address.
摘要翻译： PCT No.PCT / JP97 / 03928 Sec。 371日期：1998年6月24日 102（e）1998年6月24日PCT 1997年10月29日PCT公布。 公开号WO98 / 20498 日期：1998年5月14日在具有由故障数据存储器和第一存储器控制部分构成的故障数据存储部分和由掩模数据存储器和第二存储器控制部分组成的掩模数据存储部分的存储器测试装置的故障分析存储器中 当测试装置的逻辑比较结果是测试模式失败时，第一存储器控制部分进行控制以在相应地址的故障数据存储器中产生写入使能数据和写入故障数据，并且在移除模式下， 影响控制以从故障数据存储器读出故障数据并将其提供给掩码数据存储部分。 在测试模式中，第二存储器控制部分进行控制，以将掩模数据存储器读出的掩模数据作为禁止信号提供给存储器测试装置的逻辑比较器，以阻止其进行逻辑比较，并且在去除 模式，第二存储器控制部分进行控制以从故障数据存储器读出的故障数据产生写使能信号，并将其应用于掩模数据存储器，以在其中写入相应地址处的掩模数据。
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公开(公告)号：US09683471B2
公开(公告)日：2017-06-20
申请号：US12667767
申请日：2008-07-04
申请人： Masahiko Yabe , Haruyuki Yokota , Takaharu Shimizu , Hiroyuki Ninomiya , Shinya Sato , Takahiko Hayashi , Shunsuke Toshioka , Satoshi Watanabe , Tomihisa Oda , Yutaka Tanai
发明人： Masahiko Yabe , Haruyuki Yokota , Takaharu Shimizu , Hiroyuki Ninomiya , Shinya Sato , Takahiko Hayashi , Shunsuke Toshioka , Satoshi Watanabe , Tomihisa Oda , Yutaka Tanai
CPC分类号： F01N3/2066 , B01D53/9418 , B01D53/9431 , B01D53/944 , B01D2251/2067 , B01D2251/208 , B01D2258/012 , F01N3/0814 , F01N3/103 , F01N9/00 , F01N13/009 , F01N2570/14 , F01N2610/02 , F01N2610/03 , F01N2900/1404 , F01N2900/1602 , Y02A50/2344 , Y02T10/24 , Y02T10/47
摘要： An exhaust emission control device including a selective reduction catalyst; urea water as reducing agent being added in the pipe upstream of the reduction catalyst depurate NOx through reduction; an oxidation catalyst arranged in the pipe upstream of an added position of the urea water, the oxidation catalyst physically adsorbing NOx in the exhaust gas at a temperature lower than a lower active limit temperature of the reduction catalyst and discharging the adsorbed NOx at a temperature higher than a lower active limit temperature of the oxidation catalyst; and a fuel injection device for adding fuel into the exhaust gas upstream of the oxidation catalyst is disclosed. The start of the fuel addition by the fuel injection device is refrained until exhaust temperature on an inlet side of the reduction catalyst is increased to a preset temperature comparable with the lower active limit temperature of the oxidation catalyst.
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公开(公告)号：US09234297B2
公开(公告)日：2016-01-12
申请号：US14241623
申请日：2012-08-29
申请人： Shinya Sato , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno
发明人： Shinya Sato , Tatsuo Fujimoto , Hiroshi Tsuge , Masakazu Katsuno
CPC分类号： C30B23/02 , C30B23/00 , C30B29/36 , H01L29/1608 , Y10T428/21
摘要： Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced.The method is a method for manufacturing a SiC single crystal by the PVT method using a seed crystal and the ingot is a SiC single crystal ingot obtained by the method. Particularly, the silicon carbide single crystal substrate is a silicon carbide single crystal substrate in which when, by representing the diameter of the substrate as R, a center circle region having a diameter of 0.5×R centered around a center point O of the substrate and a doughnut-shaped peripheral region remaining by excluding the center circle region are defined, the average value of screw dislocation densities observed in the doughnut-shaped peripheral region is 80% or less of the average value of screw dislocation densities observed in the center circle region.
摘要翻译： 提供一种制造具有高结晶质量，特别是极低螺旋位错密度的SiC单晶的方法和通过该方法获得的SiC单晶锭。 特别地，提供了碳化硅单晶基板，其是从通过物理运输（PVT）方法生长的块状碳化硅单晶切割的基板，其中在周边区域中的螺旋位错密度小于中心 区域，使得螺旋位错部分减少。 该方法是通过使用晶种的PVT方法制造SiC单晶的方法，并且该锭是通过该方法获得的SiC单晶锭。 特别地，碳化硅单晶衬底是碳化硅单晶衬底，其中当通过将衬底的直径表示为R时，以衬底的中心点O为中心的直径为0.5×R的中心圆区域， 定义了通过排除中心圆区域而剩余的环状周边区域，在圆环状周边区域观察到的螺旋位错密度的平均值为在中心圆区域观察到的螺旋位错密度的平均值的80％以下 。
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公开(公告)号：US08891034B2
公开(公告)日：2014-11-18
申请号：US12413414
申请日：2009-03-27
申请人： Yoshiharu Takane , Shinya Sato , Nobuhiro Sato
发明人： Yoshiharu Takane , Shinya Sato , Nobuhiro Sato
IPC分类号： G02F1/133 , G02F1/13 , G09G3/36 , G02B5/18 , G11B7/1369 , G11B7/1353
CPC分类号： G11B7/1353 , G02B5/1828 , G11B7/1369
摘要： A liquid crystal optical element having a crystal liquid optical element adapted to positively function as a diffraction element and an optical pickup apparatus including the liquid crystal optical element are disclosed. A transparent electrode having a diffraction pattern is arranged on one of a pair of transparent substrates. A liquid crystal panel has a transparent opposed electrode arranged on the other one of the pair of the transparent substrates. A driving unit generates a phase difference distribution in the liquid crystal layer by generating a potential difference between the transparent electrode and the transparent opposed electrode and causes the liquid crystal panel to function as a diffraction element for diffracting the incoming light beam transmitted therethrough. The diffraction pattern or the transparent opposed electrode is divided into a plurality of regions. The driving unit adjusts the potential difference for each of the regions.
摘要翻译： 公开了一种液晶光学元件，其具有适用于作为衍射元件的结晶液体光学元件和包括该液晶光学元件的光学拾取装置。 具有衍射图案的透明电极设置在一对透明基板中的一个上。 液晶面板具有布置在一对透明基板中的另一个上的透明相对电极。 驱动单元通过产生透明电极和透明相对电极之间的电位差而在液晶层中产生相位差分布，并使液晶面板用作用于衍射透射入射光束的衍射元件。 衍射图案或透明相对电极被分成多个区域。 驱动单元调整每个区域的电位差。
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公开(公告)号：US08744712B2
公开(公告)日：2014-06-03
申请号：US13187554
申请日：2011-07-21
申请人： Naoyuki Tashiro , Ryo Inaba , Shinya Sato
发明人： Naoyuki Tashiro , Ryo Inaba , Shinya Sato
CPC分类号： B60L7/18 , B60L11/1872 , B60L15/2036 , B60L2240/36 , B60L2250/26 , Y02T10/645 , Y02T10/7005 , Y02T10/705 , Y02T10/72 , Y02T10/7275
摘要： A drive control device for an electric vehicle that is driven by a motor-generator, includes: a detection unit that detects a fact that an accelerator pedal depression amount and a brake pedal depression amount of the electric vehicle are both zero; and a control unit that sets a regenerative braking torque command value for the motor-generator to zero, while the detection unit is detecting the fact.
摘要翻译： 一种由电动发电机驱动的电动车辆的驱动控制装置，包括：检测单元，其检测所述电动车辆的加速器踏板下压量和制动踏板下压量均为零的事实; 以及控制单元，其在所述检测单元检测到所述事实的同时，将所述电动发电机的再生制动转矩指令值设定为零。
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公开(公告)号：US20140047821A1
公开(公告)日：2014-02-20
申请号：US14005096
申请日：2012-03-14
IPC分类号： F01N3/10
CPC分类号： F01N3/10 , B01J29/072 , B01J35/04 , B01J37/0246 , F01N3/2066 , F01N2240/25 , F01N2240/40 , F01N2610/02 , F01N2610/06 , F01N2610/08 , F01N2610/10 , F01N2610/14 , F01N2610/1453 , Y02T10/24
摘要： Disclosed is a urea solution reformer and an exhaust gas purifier using the same, configured to heat a carrier gas supplied from a carrier gas source by a carrier gas heating unit (16), to inject the carrier gas heated by the carrier gas heating unit from a carrier gas injecting nozzle (17), and to cause a urea solution (18) to be supplied by a first urea solution supply nozzle (21) to a tip end of the carrier gas injecting nozzle so that the urea solution is atomized by the carrier gas injected from the carrier gas injecting nozzle. Provided to face toward the carrier gas injecting nozzle is a catalyst unit (23) for decomposing the atomized urea solution to reform it into an ammonia gas. Further provided is an ammonia gas supply nozzle (24) attached to an exhaust pipe (12) of an engine so as to supply the ammonia gas discharged from an outlet of the catalyst unit into the exhaust pipe. The urea solution is sufficiently atomized, and thus reformed into an ammonia gas by the catalyst unit with a good efficiency.
摘要翻译： 公开了一种尿素溶液重整器和使用该尿素溶液重整器的废气净化器，其被构造成通过载气加热单元（16）加热由载气源供给的载气，以将由载气加热单元加热的载气从 载气注入喷嘴（17），并且通过第一尿素溶液供给喷嘴（21）将尿素溶液（18）供给到载气注入喷嘴的前端，使得尿素溶液被 从载气喷射喷嘴喷射载气。 面向载气注入喷嘴的是用于分解雾化的尿素溶液以将其重整成氨气的催化剂单元（23）。 还提供了附接到发动机的排气管（12）的氨气供给喷嘴（24），以将从催化剂单元的出口排出的氨气供应到排气管中。 尿素溶液充分雾化，由此，催化剂单元以良好的效率将氨气体重整成氨气。
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公开(公告)号：US07904765B2
公开(公告)日：2011-03-08
申请号：US11857449
申请日：2007-09-19
申请人： Masahiko Hata , Shinya Sato
发明人： Masahiko Hata , Shinya Sato
CPC分类号： G11C29/56 , G11C16/04 , G11C29/006 , G11C2029/0401 , G11C2029/5602
摘要： Provided is a test apparatus including: test signal supply sections supplying a test signal writing test data to the connected memory under test, to a terminal of the memory; terminal correspondence determination sections outputting a terminal unit determination result indicating whether test data from the connected terminal matches an expected value; a determination result selection section selecting, for each memory, terminal unit determination results from the terminal correspondence determination sections; a memory correspondence determination section determining whether writing succeeded to each memory, based on the selection result by the determination result selection section; an identifying section identifying a test signal supply section connected to the memory to which writing succeeded and a test signal supply section connected to the memory to which writing failed; and a mask treatment section instructing each test signal supply section whether to perform re-testing, according to whether writing succeeded.
摘要翻译： 提供了一种测试装置，包括：测试信号提供部分，将测试信号提供给连接的被测试的存储器，将测试数据写入存储器的终端; 终端对应确定部分，输出指示来自所连接终端的测试数据是否匹配期望值的终端单元确定结果; 确定结果选择部分，从终端对应确定部分为每个存储器选择终端单元确定结果; 存储器对应决定部，基于所述判定结果选择部的选择结果，确定是否对每个存储器进行写入; 识别部分，识别连接到写入成功的存储器的测试信号提供部分和连接到写入失败的存储器的测试信号提供部分; 以及掩模处理部，根据写入是否成功指示每个测试信号提供部分是否执行重新测试。
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公开(公告)号：US07661043B2
公开(公告)日：2010-02-09
申请号：US11477245
申请日：2006-06-29
申请人： Shinya Sato
发明人： Shinya Sato
IPC分类号： G11C29/00
CPC分类号： G11C29/56 , G01R31/31935 , G11C29/56004
摘要： A test apparatus includes a pattern memory for storing a test pattern to be inputted to a memory-under-test, an address generating section for sequentially outputting addresses of the memory-under-test into which the test pattern is to be written, a pointer section for sequentially pointing each address of the pattern memory to cause the pattern memory to output the test pattern in synchronism with the address of the memory-under-test outputted out of the address generating section, a bad block memory for storing an address of a bad block of the memory-under-test in advance and a pointer control section for causing the address generating section to output a next address of the memory-under-test while holding the address of the pattern memory outputted out of the pointer section when the address of the memory-under-test generated by the address generating section coincides with any one of addresses stored in the bad block memory.
摘要翻译： 测试装置包括用于存储要输入到被测存储器的测试模式的模式存储器，地址产生部分，用于顺序地输出要写入测试模式的待测存储器的地址，指针 用于顺序地指示图案存储器的每个地址，使得图案存储器与从地址生成部分输出的被测存储器的地址同步地输出测试图案;坏块存储器，用于存储 预先存储器未测试的坏块和指针控制部分，用于使得地址生成部分在保持从指针部分输出的模式存储器的地址的同时输出待测存储器的下一个地址时 由地址生成部生成的被测存储器的地址与存储在坏块存储器中的任一地址一致。
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10.发明申请公开(公告)号：US20090280024A1
公开(公告)日：2009-11-12
申请号：US12064297
申请日：2006-08-22
IPC分类号： C22C19/05
CPC分类号： B01J3/008 , B01J19/02 , B01J2219/0236 , B01J2219/0277 , B01J2219/029 , C22C19/052 , C22C19/053 , C22C19/055 , C22C19/056 , Y02P20/544
摘要： The invention intends to provide a material that exhibits excellent corrosion resistance to supercritical ammonia and is suitable for a supercritical ammonia reactor.An Ni-based corrosion resistant alloy includes from 15% or more to 50% or less by mass of Cr and any one or both of Mo and W, wherein a [(content of Mo)+0.5×(content of W)] is from 1.5% or more to 8.5% or less by mass, a value of 1.8×[% content of Cr]/{[% content of Mo]+0.5×[% content of W]} is from 3.0 or more to 70.0 or less and the balance is Ni and an unavoidable impurity. Preferably, content of Fe is less than 3% by mass, and content of C is less than 0.05% by mass. The alloy is used to configure a supercritical ammonia reactor or the material is coated on a surface that contacts with a supercritical ammonia fluid. The alloy exhibits excellent corrosion resistance to supercritical ammonia and a mineralizer added the supercritical ammonia. The safety and reliability of an apparatus can be improved, the producing cost can be reduced, the apparatus lifetime can be extended and the running cost can be reduced.
摘要翻译： 本发明旨在提供一种对超临界氨具有优异耐腐蚀性并适用于超临界氨反应器的材料。 Ni系耐腐蚀合金含有15质量％以上且50质量％以下的Cr和Mo和W中的任一种或两者，其中[（Mo）+ 0.5×（W含量）]为 从1.5％以上至8.5％以下，Crx / {[Mo含量] + 0.5×[W]的含量为1.8×[％]的值为3.0以上至70.0以上， 较少，平衡是Ni和不可避免的杂质。 Fe的含量优选小于3质量％，C的含量优选为0.05质量％以下。 该合金用于构造超临界氨反应器，或者该材料涂覆在与超临界氨流体接触的表面上。 该合金对超临界氨表现出优异的耐腐蚀性，并且矿化剂加入超临界氨。 可以提高设备的安全性和可靠性，可以降低生产成本，延长设备使用寿命，降低运行成本。
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