-
1.发明申请Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase Epitaxy 审中-公开使用金属有机气相外延的III族金属 - 氮化物材料生长的方法公开(公告)号：US20110254134A1
公开(公告)日：2011-10-20
申请号：US13087614
申请日：2011-04-15
CPC分类号： H01L21/0242 , C30B25/02 , C30B29/403 , H01L21/02433 , H01L21/02439 , H01L21/0254 , H01L21/0262 , Y10T156/11
摘要： The non-polar or semi-polar Nitride film is grown using Metal Organic Vapor Phase Epitaxy over a substrate. The in-situ grown seed layer comprising Magnesium and Nitrogen is deposited prior to the Nitride film growth. The said seed layer enhances the crystal growth of the Nitride material and makes it suitable for electronics and optoelectronics applications. The use of non-polar and/or semi-polar epitaxial films of the Nitride materials allows avoiding the unwanted effects related to polarization fields and associated interface and surface charges, thus significantly improving the semiconductor device performance and efficiency. In addition, the said seed layer is also easily destroyable by physical or chemical stress, including the ability to dissolve in water or acid, which makes the substrate removal process available and easy. The substrate removal provides the possibility to achieve exceptional thermal conductivity and application flexibility, such as additional contact formation, electromagnetic radiation extraction, packaging or other purposes suggested or discovered by the skilled artisan.
摘要翻译： 使用金属有机气相外延在基材上生长非极性或半极性氮化物膜。 在氮化物膜生长之前沉积包含镁和氮的原位生长种子层。 所述种子层增强了氮化物材料的晶体生长，使其适用于电子和光电应用。 使用氮化物材料的非极性和/或半极性外延膜允许避免与极化场和相关界面和表面电荷相关的不期望的影响，从而显着提高半导体器件的性能和效率。 此外，所述种子层也容易被物理或化学应力破坏，包括溶解在水或酸中的能力，这使得基材去除过程可用和容易。 基板去除提供了获得卓越的导热性和应用灵活性的可能性，例如附加接触形成，电磁辐射提取，包装或本领域技术人员建议或发现的其它目的。
-
2.发明申请Method of Gallium Nitride growth over metallic substrate using Vapor Phase Epitaxy 审中-公开使用气相外延的金属基底上的氮化镓生长方法公开(公告)号：US20110117376A1
公开(公告)日：2011-05-19
申请号：US12947409
申请日：2010-11-16
CPC分类号： C30B25/183 , C30B29/403 , Y10T428/31678
摘要： The current invention introduces a method of crystal film's growth of Gallium Nitride and related alloys over a novel class of the substrates using Vapor Phase Epitaxy technique. This said novel class of the substrates comprises single crystal lattice matched, partially matched or mismatched metallic substrates. The use of such substrates provides exceptional thermal conductivity and application flexibility, since they can be easily removed or patterned by chemical etching for the purposes of additional contact formation, electromagnetic radiation extraction, packaging or other purposes suggested or discovered by the skilled artisan. In particular, if patterned, the remaining portions of the said substrates can be utilized as contacts to the semiconductor layers grown on them. In addition, the said metallic substrates are significantly more cost effective than most of the conventional substrates. The use of Vapor Phase Epitaxy allows growing the epitaxial layers with different and/or variable alloy composition, as well as heterostructures and superlattices.
摘要翻译： 本发明使用气相外延技术引入了一种使用新一类衬底的氮化镓和相关合金晶体膜生长的方法。 这说明新颖的基片包括单晶格子匹配，部分匹配或错配的金属基片。 使用这种基板提供了出色的导热性和应用灵活性，因为为了额外的接触形成，电磁辐射提取，包装或本领域技术人员建议或发现的其它目的，它们可以通过化学蚀刻容易地去除或图案化。 特别地，如果被图案化，则所述基板的剩余部分可以用作在其上生长的半导体层的接触。 此外，所述金属基底比大多数常规基底显着地更具成本效益。 使用气相外延允许以不同的和/或可变的合金组成以及异质结构和超晶格生长外延层。
-
3.发明授权Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer 有权基于氮化镓的LED制造，采用PVD形成的氮化铝缓冲层公开(公告)号：US08409895B2
公开(公告)日：2013-04-02
申请号：US13036273
申请日：2011-02-28
IPC分类号： H01L33/005
CPC分类号： H01L21/0254 , C23C14/0641 , C23C14/568 , C23C16/34 , C23C28/04 , C23C28/044 , C30B23/02 , C30B25/08 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/0095
摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
摘要翻译： 描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。
-
公开(公告)号：US20100062142A1
公开(公告)日：2010-03-11
申请号：US12348589
申请日：2009-01-05
申请人： Mingwei Zhu , Yanfeng Chen , Zhenlin Wang , Yanqing Lu , Haixiong Ge , Yuefeng Tang
发明人： Mingwei Zhu , Yanfeng Chen , Zhenlin Wang , Yanqing Lu , Haixiong Ge , Yuefeng Tang
IPC分类号： B05D3/00
CPC分类号： B81C1/00476 , A61M37/0015 , A61M2037/003 , A61M2037/0053 , B81B2201/055 , B81B2203/0338 , B81B2203/0361 , B81C2201/0108
摘要： A novel method suitable for commercially mass production of hollow microneedle with high quality for delivery of drugs across or into biological tissue is provided. It typically includes the following processes: (1) coating an elongated template of a first material with a second material to form a cover; (2) removing tips of the template and cover to form an opening in the cover; and (3) removing the template of the first material to obtain hollow microneedles of the second material. This simple, efficient and cost-effective fabrication method can mass produce hollow microneedle arrays involving no complicated and expensive equipments or techniques, which can be used in commercial fabrication of hollow needles for delivering drugs or genes across or into skin or other tissue barriers with advantages of minimal damage, painless, long-term and continuous usages.
摘要翻译： 提供了一种适用于商业上大规模生产用于将药物跨越或进入生物组织的高品质的中空微针的新方法。 它通常包括以下过程：（1）用第二材料涂覆第一材料的细长模板以形成盖子; （2）去除模板和盖子的尖端以在盖子上形成开口; 和（3）去除第一材料的模板以获得第二材料的中空微针。 这种简单，高效和成本有效的制造方法可以大规模生产中空微针阵列，其不涉及复杂而昂贵的设备或技术，其可用于商业制造用于将药物或基因跨越或进入皮肤或其它组织屏障的中空针 最小的伤害，无痛，长期和持续的使用。
-
5.发明申请OXYGEN CONTROLLED PVD ALN BUFFER FOR GAN-BASED OPTOELECTRONIC AND ELECTRONIC DEVICES 审中-公开用于基于GAN的光电和电子设备的氧气控制PVD ALN缓冲器公开(公告)号：US20160035937A1
公开(公告)日：2016-02-04
申请号：US14884251
申请日：2015-10-15
申请人： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
发明人： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
CPC分类号： H01L33/12 , H01J37/32467 , H01J37/32724 , H01J37/3405 , H01J37/347 , H01L29/2003 , H01L31/1856 , H01L33/007 , H01L33/0075 , Y02E10/544
摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
摘要翻译： 描述了用于GaN基光电子和电子器件的氧控PVD PVD缓冲器。 还描述了以氧控制方式形成GaN基光电子和电子器件的PVD AlN缓冲液的方法。 在一个示例中，形成用于GaN基光电子或电子器件的氮化铝（AlN）缓冲层的方法包括在衬底上方的AlN层的反应溅射，所述反应性溅射涉及使物理气相沉积 （PVD）室，其含有含氮气体或基于含氮气体的等离子体。 该方法还包括将氧气掺入到AlN层中。
-
6.发明申请Oxygen Controlled PVD Aluminum Nitride Buffer for Gallium Nitride-Based Optoelectronic and Electronic Devices 有权用于氮化镓的光电子和电子器件的氧气控制PVD氮化铝缓冲液公开(公告)号：US20140264363A1
公开(公告)日：2014-09-18
申请号：US13947857
申请日：2013-07-22
申请人： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
发明人： Mingwei Zhu , Nag B. Patibandla , Rongjun Wang , Daniel Lee Diehl , Vivek Agrawal , Anantha Subramani
CPC分类号： H01L33/12 , H01J37/32467 , H01J37/32724 , H01J37/3405 , H01J37/347 , H01L29/2003 , H01L31/1856 , H01L33/007 , H01L33/0075 , Y02E10/544
摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
摘要翻译： 描述了用于GaN基光电子和电子器件的氧控PVD PVD缓冲器。 还描述了以氧控制方式形成GaN基光电子和电子器件的PVD AlN缓冲液的方法。 在一个示例中，形成用于GaN基光电子或电子器件的氮化铝（AlN）缓冲层的方法包括在衬底上方的AlN层的反应溅射，所述反应性溅射涉及使物理气相沉积 （PVD）室，其含有含氮气体或基于含氮气体的等离子体。 该方法还包括将氧气掺入到AlN层中。
-
7.发明申请GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER 审中-公开基于氮化镓的LED制造与PVD成型的氮化铝缓冲层公开(公告)号：US20130174781A1
公开(公告)日：2013-07-11
申请号：US13782935
申请日：2013-03-01
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , C23C14/0641 , C23C14/568 , C23C16/34 , C23C28/04 , C23C28/044 , C30B23/02 , C30B25/08 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/0095
摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
摘要翻译： 描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。
-
公开(公告)号：US09396933B2
公开(公告)日：2016-07-19
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译： 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。
-
9.发明申请GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER 有权基于氮化镓的LED制造与PVD成型的氮化铝缓冲层公开(公告)号：US20120156819A1
公开(公告)日：2012-06-21
申请号：US13036273
申请日：2011-02-28
CPC分类号： H01L21/0254 , C23C14/0641 , C23C14/568 , C23C16/34 , C23C28/04 , C23C28/044 , C30B23/02 , C30B25/08 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/0095
摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
摘要翻译： 描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。
-
公开(公告)号：US20160293798A1
公开(公告)日：2016-10-06
申请号：US15183594
申请日：2016-06-15
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.018 秒)
