摘要:
A mirror for SOR includes a base (1) made of a heat resistant ceramic material having a surface, a first SiC coating (2, 3) formed on the surface of the base (1), which has a first smoothed surface, and a second SiC coating (4, 5) formed on the first smoothed surface of the first SiC coating (2, 3), which has a second smoothed surface. A third SiC coating can be formed on the smoothed surface of the second SiC coating (4).
摘要:
A carbon heater comprising heater members (11, 111, 121 . . . 161, 212, 222, 315, 325 . . . 345, 411, 515, 612) in which a plurality of carbon fiber bundles having a plurality of carbon fibers whose diameter is 5 to 15 .mu.m bundled are woven into a longitudinally elongated shape such as a wire shape or a tape shape and the impurity content is less than 10 ppm in ashes.
摘要:
End members are located at the top and the bottom of a vertical heat treatment device. A plurality of support members are vertically mounted on the end members. A plurality of wafer hold members are fixed on the support members in a parallel manner, each of which is formed in an approximately circular arc shape. The wafer hold member is made of SiC by a CVD method or Si3N4 by a CVD method. The wafer hold member has a plate portion on which a wafer is to be placed and a reinforce portion connected to the plate portion. The plate portion is 100-1000 microns in thickness.
摘要翻译:端部件位于垂直热处理装置的顶部和底部。 多个支撑构件垂直地安装在端部构件上。 多个晶片保持构件以平行方式固定在支撑构件上,每个晶片保持构件形成为大致圆弧形状。 晶片保持构件通过CVD法由SiC或Si 3 N 4通过CVD法制成。 晶片保持构件具有其上要放置晶片的板部分和连接到板部分的加强部分。 板部的厚度为100-1000微米。
摘要:
A ceramic device is disclosed that has a silicon base plate, a first ceramic film formed on a first surface of the silicon base plate, a second ceramic film formed on a second surface of the silicon base plate opposite to the first surface, and an operation opening formed in the silicon base plate between the first and second surfaces. A surface portion of the first ceramic film exposed to the operation opening Is a mirror surface having 0.05 micrometers or less of center line average height Ra. A mirror surface keeping film can be formed between the first surface of the silicon base plate and the first ceramic film for keeping a mirror surface in an etching step to etch the silicon base plate, and the silicon base plate can be reduced partially in the etching step for forming an operation opening thereby exposing a corresponding portion of the mirror surface keeping film to the operation opening.
摘要:
A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10−3 g/cm3 or less.
摘要翻译:提供碳丝加热元件密封加热器。 其中,使用碳纤维的碳丝加热元件密封在石英玻璃构件中,其中碳线加热元件的吸收水量为2×10 -3 / cm 3 或更少。
摘要:
A rod-shaped heater provided is composed of a carbon wire heating element 2 sealed in a small or large diameter quartz glass tube, a small diameter quartz glass tube portions 3a and 3b charged with compressed wire carbon members at opposite ends thereof; a sealed terminal section 10 having connection lines 11a and 11b for power supply held between the compressed wire carbon members charged in the small diameter quartz glass tube. The connection lines and the carbon wire heating element are electrically connected by way of the wire carbon members. This rod-shaped heater using the carbon wire heating element is suitable for readily raising the temperature of the agent in the storage tank of the wet etching agent or the grinding agent.
摘要:
A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10−3 g/cm3 or less.
摘要翻译:提供碳丝加热元件密封加热器。 其中,使用碳纤维的碳丝加热元件密封在石英玻璃构件中,其中碳线加热元件的吸收水量为2×10 -3 / cm 3 或更少。
摘要:
A vertical boat for holding a plurality of semiconductor wafers comprising two end members (2) positioned at the top and the bottom of the vertical boat, and a plurality of support members (3,4,5,6,104) vertically mounted on the end members (2) for supporting the wafers, wherein each support member (3,4,5,6,104) is formed by a plate-like member having a series of slits (9,10,7,8,108) formed thereon in such a manner that a plurality of support arms are defined by the slits (9,10,7,8,108) at a predetermined interval, each support arm having a support projection (11,12,13,14,112) formed at the end thereof, and wherein the inner portions (P) of the wafer (1) is to be supported by the support projections (11,12,13,14,112) whereas the periphery of the wafer (1) does not contact the arms of the support members (3,4,5,6,104). The slits can be formed in two steps: forming a series of first slit portions on the plate-like member at a predetermined interval so as to retain two side walls of the plate-like member; and forming a series of second small slit portions on one of the side walls at the same interval so as to connect each second slit portion to the corresponding first slit portion.
摘要:
A steam generating apparatus includes: a liquid tank portion 1 for storing a liquid; an evaporator portion 2 which is directly connected to the liquid tank portion, heats the liquid supplied from the liquid tank portion, and generates steam; a steam storage portion 3 which is directly connected to the evaporator portion, and stores the steam generated by the evaporator portion; a passageway 4 which is directly connected to the steam storage portion and outwardly passes the generated steam; a liquid pathway 10b which is connected to the liquid tank portion, and supplies the liquid; and a heater unit 20 which is provided on one side of the evaporator portion, and heats at least the evaporator portion. The liquid tank portion 1, the evaporator portion 2, the steam storage portion 3, the passageway 4, and the liquid pathway 10b are formed within an integral member of a translucent material.
摘要:
A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.