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公开(公告)号：US4936967A
公开(公告)日：1990-06-26
申请号：US368
申请日：1987-01-05
IPC分类号： H01J37/32
CPC分类号： H01J37/32935
摘要： The present invention relates to a method of and apparatus for detecting an end point of plasma treatment of a specimen. There is included selecting plasma spectrum having a characteristic wavelength from the plasma spectrum generating at the time of reaction in the plasma treatment of a specimen, setting a disregarding time for the plasma treatment end point detection, assuming, at the stage when the disregarding time for treatment end point detection has elapsed, a quantity of the selected plasma spectrum up to the time of said stage based on a quantity of same plasma spectrum at the time of said stage and a variation with the time in the last said quantity of plasma spectrum, and detecting the reaction time end point from the assumed quantity of plasma spectrum and an actual quantity of the same plasma spectrum after the time of said stage thereby making it possible to prevent erroneous detection of the end point of reaction in the plasma treatment and detect accurately the same even when the reaction time of the plasma treatment is short.
摘要翻译： 本发明涉及一种用于检测样品的等离子体处理终点的方法和装置。 包括从在等离子体处理终点检测中设定无视等待时间的等离子体处理终点检测时，从等离子体处理中检测到的反应时产生的等离子体光谱中选出具有特征波长的等离子体光谱，假设在不考虑时间的情况下， 处理终点检测已经过去，基于所述阶段时相同等离子体光谱的量和所述最后所述等离子体光谱中的时间的变化，所选择的等离子体谱的数量直到所述阶段的时间， 并且从所述阶段的时间之后的等离子体谱的假定量和相同等离子体光谱的实际量检测反应时间终点，从而可以防止在等离子体处理中的反应结束点的错误检测并准确检测 即使当等离子体处理的反应时间短时也是如此。
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公开(公告)号：US08282849B2
公开(公告)日：2012-10-09
申请号：US12385273
申请日：2009-04-03
IPC分类号： G01L21/30
CPC分类号： H01L22/26 , G01B11/0658 , G01B11/0683 , G01B11/24 , G01B2210/56 , G01J3/443 , G01N21/67 , G01N2021/8411 , H01L2924/0002 , H01L2924/00
摘要： An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.
摘要翻译： 一种蚀刻处理状态判断方法，包括：光谱数据获取步骤，其中通过在多个晶片的蚀刻处理期间监测光发射来获得光发射光谱分布; 峰值检测步骤，其中在蚀刻处理期间的特定时间点从光发射光谱分布检测峰值，以获得峰值特性; 共同峰识别步骤，其中在峰值检测步骤中检测到的峰中识别晶片共同的峰值; 以及状态检测步骤，其中相对于共同峰值比较特性，以检测蚀刻处理中的每个晶片的状态。 通过简单的方法，无需假定物质，从蚀刻工艺时的光发射光谱分布中检测蚀刻工艺的状态（异常或正常状态）。
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公开(公告)号：US20090253222A1
公开(公告)日：2009-10-08
申请号：US12385273
申请日：2009-04-03
CPC分类号： H01L22/26 , G01B11/0658 , G01B11/0683 , G01B11/24 , G01B2210/56 , G01J3/443 , G01N21/67 , G01N2021/8411 , H01L2924/0002 , H01L2924/00
摘要： An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.
摘要翻译： 一种蚀刻处理状态判断方法，包括：光谱数据获取步骤，其中通过在多个晶片的蚀刻处理期间监测光发射来获得光发射光谱分布; 峰值检测步骤，其中在蚀刻处理期间的特定时间点从光发射光谱分布检测峰值，以获得峰值特性; 共同峰识别步骤，其中在峰值检测步骤中检测到的峰中识别晶片共同的峰值; 以及状态检测步骤，其中相对于共同峰值比较特性，以检测蚀刻处理中的每个晶片的状态。 通过简单的方法，无需假定物质，从蚀刻工艺时的光发射光谱分布中检测蚀刻工艺的状态（异常或正常状态）。
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公开(公告)号：US20070281478A1
公开(公告)日：2007-12-06
申请号：US11502416
申请日：2006-08-11
申请人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji Ikegami , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： C23F1/00 , H01L21/302 , C23C16/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译： 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。
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公开(公告)号：US20060199288A1
公开(公告)日：2006-09-07
申请号：US11429199
申请日：2006-05-08
IPC分类号： H01L21/66
CPC分类号： H01L21/67276 , H01L22/20 , H01L22/34
摘要： A semiconductor processing method in which a sample wafer is disposed inside of a chamber for processing and process data is detected by using a generated plasma generated which includes data concerning emission light generated. Information data corresponding to the processing data is selectively sent to one of first and second data storing devices in accordance with a predetermined condition. The selective sending of the information data includes selectively sending the information data to one of the first and second data storing devices until an amount of the information data which has been sent to and stored in the one of the storing devices reaches a predetermined amount of processing of the sample wafer as the predetermined condition, and thereafter selectively sending the information data corresponding to a succeeding process to the other of the first and second data storing devices.
摘要翻译： 通过使用包括关于所产生的发光的数据的产生的所生成的等离子体来检测其中样品晶片设置在用于处理和处理数据的室内的半导体处理方法。 与处理数据相对应的信息数据根据预定条件选择性地发送到第一和第二数据存储装置之一。 信息数据的选择性发送包括有选择地将信息数据发送到第一和第二数据存储装置中的一个，直到发送到存储装置中的一个的信息数据量达到预定量的处理 的样品晶片作为预定条件，然后选择性地将对应于后续处理的信息数据发送到第一和第二数据存储装置中的另一个。
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公开(公告)号：US07010374B2
公开(公告)日：2006-03-07
申请号：US10377827
申请日：2003-03-04
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L21/67028 , H01L21/67069 , Y10S438/905
摘要： A method for controlling a semiconductor processing apparatus including a vacuum processing chamber, a plasma apparatus for generating plasma inside the vacuum processing chamber, and a process controller for controlling a process by holding a process recipe including plasma cleaning of inside of the vacuum processing chamber constant, comprises the steps of detecting process abnormality of the process on the basis of sensor data detected by sensors arranged in the semiconductor processing apparatus, and executing a recovery step for removing deposition deposited inside the vacuum processing chamber when abnormality is detected.
摘要翻译： 一种用于控制包括真空处理室的真空处理室，用于在真空处理室内产生等离子体的等离子体装置的半导体处理装置的方法，以及用于通过保持包括真空处理室内部的等离子体清洗常数的处理配方来控制处理的处理控制器 包括以下步骤：根据布置在半导体处理装置中的传感器检测到的传感器数据来检测处理异常，并且当检测到异常时，执行用于去除沉积在真空处理室内的沉积物的恢复步骤。
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公开(公告)号：US20050189320A1
公开(公告)日：2005-09-01
申请号：US11113026
申请日：2005-04-25
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67069 , H01L21/67248
摘要： A plasma processing method for performing plasma processing on a sample in accordance with a process recipe with the sample being placed on a sample table in which each of a plurality of areas is temperature-controlled by a temperature controller. The process recipe includes a plurality of temperature setting parameters for the sample table, and the plasma processing is performed on the sample in accordance with the process recipe which is prepared for each of a plurality of process steps.
摘要翻译： 一种等离子体处理方法，用于根据处理配方对样品进行等离子体处理，其中样品被放置在样本台上，其中多个区域中的每一个被温度控制器温度控制。 处理配方包括用于样品台的多个温度设定参数，并且根据为多个处理步骤中的每一个准备的处理配方对样品执行等离子体处理。
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8.发明授权公开(公告)号：US06885906B2
公开(公告)日：2005-04-26
申请号：US10140184
申请日：2002-05-08
申请人： Kouji Nishihata , Kazuhiro Joo , Shoji Ikuhara , Tetsuya Tahara , Shoji Okiguchi
发明人： Kouji Nishihata , Kazuhiro Joo , Shoji Ikuhara , Tetsuya Tahara , Shoji Okiguchi
IPC分类号： H01L21/00 , H01L21/677 , G06F19/00
CPC分类号： H01L21/67745 , H01L21/67167 , H01L21/67276 , Y10S414/135 , Y10S414/139 , Y10S414/14 , Y10S438/905 , Y10T29/41
摘要： A vacuum processing method and apparatus having one cassette containing wafers which are to be transferred in a preset transferring order to a processing unit via a transfer unit, and another cassette containing wafers to be processed on an emergency basis. Automatic control of processing a wafer from the one cassette is effected, and in response to a request for emergency processing of a water of the another cassette, the automatic processing control of the one wafer from the one cassette is temporarily stopped while completing processing of the wafer of the one cassette returning the same to the one cassette. Emergency processing is initiated by transferring a wafer from the another cassette to the vacuum processing unit via the transfer unit. The processing of the emergency wafer is completed and the processed emergency wafer is returned to the another cassette.
摘要翻译： 一种具有一个盒子的真空处理方法和装置，其中一个盒子包含将以预定的转印顺序经由转印单元传送到处理单元的晶片，以及另一个盒子，其容纳在紧急的基础上处理的晶片。 自动控制从一个盒子处理晶片，并且响应于对另一盒的水的紧急处理的请求，一个晶片从一个盒的自动处理控制暂时停止，同时完成 一个盒的晶片将其返回到一个盒。 通过传送单元将晶片从另一个盒传送到真空处理单元来启动紧急处理。 完成紧急晶片的处理，将处理过的应急晶片返回到另一个盒。
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公开(公告)号：US06881352B2
公开(公告)日：2005-04-19
申请号：US10350061
申请日：2003-01-24
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
IPC分类号： H05H1/00 , B01J19/08 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/66 , H01L21/00
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.
摘要翻译： 一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。 控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型 传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果 成为目标值。 基于由最佳配方计算模型生成的配方来控制等离子体处理器。
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10.发明授权公开(公告)号：US07601240B2
公开(公告)日：2009-10-13
申请号：US11346298
申请日：2006-02-03
申请人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
发明人： Akira Kagoshima , Hideyuki Yamamoto , Shoji Ikuhara , Toshio Masuda , Hiroyuki Kitsunai , Junichi Tanaka , Natsuyo Morioka , Kenji Tamaki
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/45031 , H01J37/32935 , H01L22/26 , Y02P90/20 , Y02P90/22
摘要： A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.
摘要翻译： 等离子体处理系统包括：基于等离子体处理的配方对样品进行等离子体处理的第一单元;以及用于根据在第一单元中的样品的等离子体处理期间获得的监视值修改配方的第二单元。 基于改进的配方，下一个样品在第一单元中进行等离子体处理。
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