公开(公告)号：US06274505B1

公开(公告)日：2001-08-14

申请号：US09387801

申请日：1999-09-01

申请人： Shoko Ito ,  Mokuji Kageyama

发明人： Shoko Ito ,  Mokuji Kageyama

IPC分类号： H01L2100

CPC分类号： H01L21/67086

摘要： By locally heating or cooling a substrate in an etching process, temperature unevenness is controlled, and convection currents of an etching liquid are restricted simultaneously. By setting the etching temperature low in an initial stage of the etching process and increasing it in a final stage, uniform and quick etching is possible. In a drop etching method, generation of bubbles can be prevented to ensure uniform etching by providing gas release openings in a member opposed to the substrate.

摘要翻译： 通过在蚀刻工艺中局部加热或冷却衬底，控制温度不均匀性，同时限制蚀刻液体的对流。 通过在蚀刻工艺的初始阶段将蚀刻温度设置得较低，并且在最终阶段将其提高，可以进行均匀且快速的蚀刻。 在液滴蚀刻方法中，可以防止气泡的产生，以通过在与基板相对的构件中提供气体释放开口来确保均匀的蚀刻。

公开(公告)号：US5055413A

公开(公告)日：1991-10-08

申请号：US338797

申请日：1989-04-17

申请人： Mokuji Kageyama ,  Ayako Maeda

发明人： Mokuji Kageyama ,  Ayako Maeda

IPC分类号： G01N1/28 ,  G01N1/02 ,  G01N1/04 ,  G01N31/00 ,  H01L21/66

CPC分类号： G01N1/02 ,  G01N31/00 ,  Y10T436/25 ,  Y10T436/25375 ,  Y10T436/255

摘要： An object to be measured is moved relative to a stick prepared by cooling and solidifying a solution into a rod-like shape. The stick is brought into contact with the surface of the object to be measured, thereby dissolving a natural oxide film and the like formed on the surface of the object. After the stick is brought into contact with the overall surface of the object to be measured, the solution held at the end portion of the stick is analyzed by chemical analysis to measure the type and amount of an impurity adhered on the surface of the object.

公开(公告)号：US5395446A

公开(公告)日：1995-03-07

申请号：US161095

申请日：1993-12-03

申请人： Mokuji Kageyama ,  Kiyoshi Yoshikawa ,  Ayako Shimazaki

发明人： Mokuji Kageyama ,  Kiyoshi Yoshikawa ,  Ayako Shimazaki

IPC分类号： H01L21/00 ,  B05C11/00

CPC分类号： H01L21/6715 ,  H01L21/67023

摘要： A semiconductor treatment apparatus has a gas-phase decomposing device for decomposing a gas-phase on a surface of a semiconductor substrate, a substrate supporting device for supporting the substrate, and a substrate transfer device for transferring the substrate between the gas-phase decomposing device and the substrate supporting device. The apparatus further has a liquid-drop applicator for applying a liquid-drop on the surface of the substrate supported by the substrate supporting device, with the liquid-drop being brought into contact with the surface of the substrate, and a liquid-drop preserving device for preserving the liquid-drop that has been applied to the surface of the substrate.

摘要翻译： 半导体处理装置具有用于分解半导体衬底的表面上的气相的气相分解装置，用于支撑衬底的衬底支撑装置和用于将衬底转移到气相分解装置之间的衬底转移装置 和基板支撑装置。 该装置还具有液滴施加器，用于在由基板支撑装置支撑的基板的表面上施加液滴，液滴与基板的表面接触，液滴保持 用于保存已经施加到基底表面的液滴的装置。

公开(公告)号：US5148457A

公开(公告)日：1992-09-15

申请号：US719706

申请日：1991-06-27

申请人： Atsuko Kubota ,  Norihiko Tsuchiya ,  Shuichi Samata ,  Yoshiaki Matsushita ,  Mokuji Kageyama

发明人： Atsuko Kubota ,  Norihiko Tsuchiya ,  Shuichi Samata ,  Yoshiaki Matsushita ,  Mokuji Kageyama

IPC分类号： G01N23/223

CPC分类号： G01N23/223 ,  G01N2223/076

摘要： A system for analyzing a metal impurity at the surface of a single crystal semiconductor comprising: an incident device for allowing X-ray to be incident, at an incident angle less than a total reflection angle, onto the surface of a wafer in the form of a thin plate comprised of a single crystal semiconductor (e.g., silicon); a wafer fixing/positioning stage wherein when it is assumed that the wafer surface is partitioned by a lattice having an interval d, and that the wavelength of the X-ray from the incident device is .lambda., an angle that the X-ray and the wafer surface form is .theta., and an arbitrary integer is n, the stage is adapted to fix the crystal orientation of the wafer so as to satisfy the condition of "2d sin .theta..noteq.n.lambda.", and to allow sample points to which X-ray is incident to be subjected to positioning by a horizontal movement; and analyzing device for measuring a light quantity of a fluorescent X-ray generated as the result of the fact that the incident X-ray excites atoms at the wafer surface to analyze a quantity of the metal impurity attached on the wafer surface under the condition that the Bragg reflection causing measurement noises does not take place.

公开(公告)号：US6165872A

公开(公告)日：2000-12-26

申请号：US321595

申请日：1999-05-28

申请人： Mokuji Kageyama

发明人： Mokuji Kageyama

IPC分类号： H01L21/322 ,  H01L29/32 ,  H01L29/34 ,  H01L21/30

CPC分类号： H01L29/32 ,  H01L21/3225 ,  H01L29/34 ,  Y10S257/913

摘要： A denuded zone DZ least liable to generate defects is formed in a surface layer zone 12 of a semiconductor wafer 10. In an inner layer zone 18 of the semiconductor wafer 10, micro defects BMD for gettering of impurity metal are made. In the inner layer zone 18, the precipitation of oxygen decreases with the depth. As a result, mechanical strength can be maintained while improving the gettering performance of impurity metal.

摘要翻译： 在半导体晶片10的表层区12中形成最不容易产生缺陷的剥离区DZ。在半导体晶片10的内层区18中，形成用于吸杂杂质金属的微缺陷BMD。 在内层区18中，氧的沉淀随深度而减小。 结果，可以在提高杂质金属的吸气性能的同时保持机械强度。

公开(公告)号：US5574307A

公开(公告)日：1996-11-12

申请号：US357351

申请日：1994-12-16

申请人： Mokuji Kageyama ,  Yoshiaki Matsushita

发明人： Mokuji Kageyama ,  Yoshiaki Matsushita

IPC分类号： C30B29/06 ,  C30B13/00 ,  C30B15/00 ,  H01L21/02 ,  H01L21/322 ,  H01L29/167 ,  H01L29/207 ,  H01L29/227 ,  H01L31/0288

CPC分类号： C30B13/00 ,  C30B15/00 ,  C30B29/06 ,  H01L21/3225 ,  Y10S257/928

摘要： A semiconductor apparatus has a silicon substrate sliced off from a silicon ingot produced by the pulling method or floating zone method, wherein the concentration of interstitial oxygen in a region with a depth of approximately 10 .mu.m or less from a device forming surface is minimum except for the device forming surface. According to the present invention, in the semiconductor apparatus production process, in the inner region with a depth of approximately 10 .mu.m from the device forming surface of the silicon substrate, the inner region affecting the device operation, oxygen does not precipitate. Moreover, in a more inner region, oxygen precipitates, thereby providing a gettering effect with respect to metal impurities.

摘要翻译： 半导体装置具有从通过牵引方法或浮动区域法制造的硅锭切片的硅基板，其中从器件形成表面开始深度约10μm以下的区域中的间隙氧的浓度最小，除了 用于装置形成表面。 根据本发明，在半导体装置的制造方法中，在距离硅衬底的器件形成表面大约10μm的深度的内部区域中，影响器件工作的内部区域，氧不会沉淀。 此外，在更内部的区域中，氧析出，从而对金属杂质提供吸气效应。

公开(公告)号：US6037270A

公开(公告)日：2000-03-14

申请号：US496677

申请日：1995-06-29

申请人： Mokuji Kageyama ,  Moriya Miyashita

发明人： Mokuji Kageyama ,  Moriya Miyashita

IPC分类号： H01L21/316 ,  H01L21/26 ,  H01L21/306 ,  H01L21/311 ,  H01L21/66 ,  C23F1/24 ,  C23F1/10

CPC分类号： H01L21/31111 ,  H01L21/02052 ,  H01L22/12

摘要： The gate oxide film is prevented from being thinned partially. The semiconductor substrate (wafer) can be etched (processed) under excellent conditions. The impurities on the wafer surface can be analyzed and further reduced. In the first aspect, the substrate is irradiated with ultraviolet rays in contact with an F-containing aqueous solution, so that the oxide film and the substrate can be etched at roughly the same etching speed under excellent controllability without deteriorating the planarization of the substrate. In the second aspect, the substrate is etched by irradiating ultraviolet rays during exposure to an acid aqueous solution, so that surface metallic contamination and particles can be removed without deteriorating the wafer surface roughness. Further, the impurity elements in the outermost surface layer of the wafer can be analyzed at high precision by analyzing elements contained in the acid aqueous solution used for the etching. According to the third aspect, holes and electrons are recombined in the polycrystal silicon during irradiation of the ultraviolet rays, and metallic impurities are dissolved into the aqueous solution as ions, so that metallic impurities in the polycrystal silicon can be reduced.

摘要翻译： 防止栅极氧化膜部分变薄。 可以在优异的条件下对半导体衬底（晶片）进行蚀刻（处理）。 可以分析晶圆表面上的杂质并进一步减少。 在第一方面中，用与含F水溶液接触的紫外线照射基板，从而可以在优异的可控性下以大致相同的蚀刻速度蚀刻氧化膜和基板，而不会劣化基板的平坦化。 在第二方面中，通过在暴露于酸性水溶液时照射紫外线来蚀刻基板，从而可以除去表面金属污染物和颗粒，而不会降低晶片表面粗糙度。 此外，通过分析用于蚀刻的酸性水溶液中所含的元素，可以高精度地分析晶片的最外表面层中的杂质元素。 根据第三方面，在紫外线照射期间，多晶硅中的空穴和电子被重新结合，并且金属杂质作为离子溶解在水溶液中，从而可以减少多晶硅中的金属杂质。

公开(公告)号：US5939770A

公开(公告)日：1999-08-17

申请号：US143251

申请日：1998-08-28

申请人： Mokuji Kageyama

发明人： Mokuji Kageyama

IPC分类号： H01L21/322 ,  H01L29/32 ,  H01L29/34 ,  H01L29/24 ,  H01L29/36

CPC分类号： H01L29/32 ,  H01L21/3225 ,  H01L29/34 ,  Y10S257/913

摘要： A denuded zone DZ least liable to generate defects is formed in a surface layer zone 12 of a semiconductor wafer 10. In an inner layer zone 18 of the semiconductor wafer 10, micro defects BMD for gettering of impurity metal are made. In the inner layer zone 18, the precipitation of oxygen decreases with the depth. As a result, mechanical strength can be maintained while improving the gettering performance of impurity metal.

公开(公告)号：US5271796A

公开(公告)日：1993-12-21

申请号：US858700

申请日：1992-03-27

申请人： Moriya Miyashita ,  Mokuji Kageyama ,  Hachiro Hiratsuka

发明人： Moriya Miyashita ,  Mokuji Kageyama ,  Hachiro Hiratsuka

IPC分类号： G01B11/30 ,  C30B33/00 ,  G01N21/88 ,  G01N21/93 ,  H01L21/66 ,  H01S3/00 ,  H01L21/306 ,  B44C1/22

CPC分类号： C30B33/00 ,  G01N21/88

摘要： A method of detecting a defect on the surface of a semiconductor substrate, including: a first etching step of etching a semiconductor substrate by a first etching amount; a first check step of applying a beam to the surface of the substrate underwent the first etching step, and detecting a first reflected beam; a second etching step of etching the substrate etched by the first etching amount, by an additional etching amount, to make the total etching amount a second etching amount; a second check step of applying the beam to the surface of the substrate underwent the second etching step, and detecting a second reflected beam; and a calculation step of calculating the relation between the first and second reflected beams.

摘要翻译： 一种检测半导体衬底表面上的缺陷的方法，包括：第一蚀刻步骤，用第一蚀刻量蚀刻半导体衬底; 第一检查步骤，将光束施加到所述基板的表面，进行所述第一蚀刻步骤，并检测第一反射光束; 第二蚀刻步骤，通过附加蚀刻量蚀刻由第一蚀刻量蚀刻的衬底，以使总蚀刻量成为第二蚀刻量; 第二检查步骤，将光束施加到衬底的表面，进行第二蚀刻步骤，并检测第二反射光束; 以及计算第一和第二反射光束之间的关系的计算步骤。

公开(公告)号：US4990459A

公开(公告)日：1991-02-05

申请号：US339825

申请日：1989-04-18

申请人： Ayako Maeda ,  Mokuji Kageyama ,  Shintaro Yoshii ,  Masanobu Ogino

发明人： Ayako Maeda ,  Mokuji Kageyama ,  Shintaro Yoshii ,  Masanobu Ogino

IPC分类号： G01N1/28 ,  G01N1/02 ,  G01N31/00 ,  G01N33/00

CPC分类号： G01N1/4055 ,  G01N1/02 ,  G01N31/00 ,  G01N2001/028 ,  Y10T436/25 ,  Y10T436/25375 ,  Y10T436/255

摘要： A drop which is hydrophobic to the surface of an object to be measured is dropped on the surface of the object and moved so as to be brought into contact with the overall surface of the object to be measured. After the movement, the drop is recovered and analyzed by chemical analysis to measure the kind of element and content of an impurity adsorbed on the surface of the object to be measured.