公开(公告)号：US08569823B2

公开(公告)日：2013-10-29

申请号：US13235970

申请日：2011-09-19

申请人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

IPC分类号： H01L29/788

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/517 ,  H01L29/66833 ,  H01L29/792

摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.

摘要翻译： 根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在 电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。

公开(公告)号：US20120068250A1

公开(公告)日：2012-03-22

申请号：US13235970

申请日：2011-09-19

申请人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Masao Shingu ,  Shosuke Fujii ,  Akira Takashima ,  Daisuke Matsushita ,  Jun Fujiki ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Koichi Muraoka

IPC分类号： H01L29/788 ,  H01L21/28

CPC分类号： H01L29/513 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/517 ,  H01L29/66833 ,  H01L29/792

摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.

摘要翻译： 根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在 电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。

公开(公告)号：US07956405B2

公开(公告)日：2011-06-07

申请号：US12404648

申请日：2009-03-16

申请人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L29/517 ,  H01L29/66833

摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.

摘要翻译： 半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

公开(公告)号：US20100213435A1

公开(公告)日：2010-08-26

申请号：US12710942

申请日：2010-02-23

申请人： Shosuke Fujii ,  Koichi Muraoka

发明人： Shosuke Fujii ,  Koichi Muraoka

IPC分类号： H01L29/66 ,  H01L29/78

CPC分类号： H01L29/51 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78

摘要： A switching device includes: a first layer including a carbon material having a six-member ring network structure; a first electrode electrically connected to a first portion of the first layer; a second electrode electrically connected to a second portion of the first layer and provided apart from the first electrode; a third electrode including a fourth portion provided opposing a third portion between the first portion and the second portion of the first layer; and a second layer provided between the third portion of the first layer and the fourth portion of the third electrode. The second layer includes: a base portion; and a functional group portion. The functional group portion is provided between the base portion and the first layer. The functional group portion is bonded to the base portion. A ratio of sp2-bonded carbon and sp3-bonded carbon of the first layer is changeable by a voltage applied between the first layer and the third electrode.

摘要翻译： 开关装置包括：第一层，包括具有六元环网结构的碳材料; 电连接到第一层的第一部分的第一电极; 电连接到第一层的第二部分并且与第一电极分开设置的第二电极; 第三电极，包括与所述第一层的第一部分和第二部分之间的第三部分相对设置的第四部分; 以及设置在第一层的第三部分和第三电极的第四部分之间的第二层。 第二层包括：基部; 和官能团部分。 功能组部分设置在基部和第一层之间。 官能团部分结合到基部。 第一层的sp2键合碳和sp3键合碳的比例可以通过施加在第一层和第三电极之间的电压而改变。

公开(公告)号：US08278644B2

公开(公告)日：2012-10-02

申请号：US12710942

申请日：2010-02-23

申请人： Shosuke Fujii ,  Koichi Muraoka

发明人： Shosuke Fujii ,  Koichi Muraoka

IPC分类号： H01L29/06

CPC分类号： H01L29/51 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78

摘要： A switching device includes: a first layer including a carbon material having a six-member ring network structure; a first electrode electrically connected to a first portion of the first layer; a second electrode electrically connected to a second portion of the first layer and provided apart from the first electrode; a third electrode including a fourth portion provided opposing a third portion between the first portion and the second portion of the first layer; and a second layer provided between the third portion of the first layer and the fourth portion of the third electrode. The second layer includes: a base portion; and a functional group portion. The functional group portion is provided between the base portion and the first layer. The functional group portion is bonded to the base portion. A ratio of sp2-bonded carbon and sp3-bonded carbon of the first layer is changeable by a voltage applied between the first layer and the third electrode.

摘要翻译： 开关装置包括：第一层，包括具有六元环网结构的碳材料; 电连接到第一层的第一部分的第一电极; 电连接到第一层的第二部分并且与第一电极分开设置的第二电极; 第三电极，包括与所述第一层的第一部分和第二部分之间的第三部分相对设置的第四部分; 以及设置在第一层的第三部分和第三电极的第四部分之间的第二层。 第二层包括：基部; 和官能团部分。 功能组部分设置在基部和第一层之间。 官能团部分结合到基部。 第一层的sp2键合碳和sp3键合碳的比例可以通过施加在第一层和第三电极之间的电压而改变。

公开(公告)号：US20100078704A1

公开(公告)日：2010-04-01

申请号：US12404648

申请日：2009-03-16

申请人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

发明人： Tsunehiro Ino ,  Shosuke Fujii ,  Jun Fujiki ,  Akira Takashima ,  Masao Shingu ,  Daisuke Matsushita ,  Naoki Yasuda ,  Koichi Muraoka

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/792 ,  H01L29/517 ,  H01L29/66833

摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.

摘要翻译： 半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在所述隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

公开(公告)号：US08698277B2

公开(公告)日：2014-04-15

申请号：US13233623

申请日：2011-09-15

申请人： Takashi Yamauchi ,  Shosuke Fujii ,  Reika Ichihara

发明人： Takashi Yamauchi ,  Shosuke Fujii ,  Reika Ichihara

IPC分类号： H01L23/52 ,  H01L29/00 ,  H01L47/00 ,  H01L29/02 ,  H01L29/04 ,  H01L29/06 ,  G11C11/00

CPC分类号： H01L45/1253 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1641

摘要： According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer.

摘要翻译： 根据一个实施例，非易失性可变电阻器件包括第一电极，第二电极，第一层和第二层。 第二电极包括金属元件。 第一层布置在第一电极和第二电极之间，并且包括半导体元件。 第二层插入在第二电极和第一层之间并且包括半导体元件。 未终止的半导体元件的百分比在第二层比在第一层中高。

公开(公告)号：US08664632B2

公开(公告)日：2014-03-04

申请号：US13599504

申请日：2012-08-30

申请人： Daisuke Matsushita ,  Shosuke Fujii ,  Yoshifumi Nishi ,  Akira Takashima ,  Takayuki Ishikawa ,  Hidenori Miyagawa ,  Takashi Haimoto ,  Yusuke Arayashiki ,  Hideki Inokuma

发明人： Daisuke Matsushita ,  Shosuke Fujii ,  Yoshifumi Nishi ,  Akira Takashima ,  Takayuki Ishikawa ,  Hidenori Miyagawa ,  Takashi Haimoto ,  Yusuke Arayashiki ,  Hideki Inokuma

IPC分类号： H01L47/00 ,  G11C11/00

CPC分类号： H01L45/1253 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/148

摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.

摘要翻译： 根据一个实施例，存储器件包括第一电极，第二电极和可变电阻膜。 可变电阻膜连接在第一电极和第二电极之间。 第一电极包括由导电材料制成的基体中所含的金属。 金属的内聚能低于导电材料的内聚能。 第一电极的宽度方向的中央部的金属浓度高于第一电极的宽度方向的两端部的金属的浓度。

公开(公告)号：US20130175490A1

公开(公告)日：2013-07-11

申请号：US13547645

申请日：2012-07-12

申请人： Haruka KUSAI ,  Kiwamu Sakuma ,  Shosuke Fujii ,  Masumi Saitoh ,  Masahiro Kiyotoshi

发明人： Haruka KUSAI ,  Kiwamu Sakuma ,  Shosuke Fujii ,  Masumi Saitoh ,  Masahiro Kiyotoshi

IPC分类号： H01L27/088 ,  H01L27/24 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/265 ,  H01L21/02

CPC分类号： H01L27/088 ,  G11C16/04 ,  G11C16/10 ,  H01L21/02367 ,  H01L21/265 ,  H01L21/32051 ,  H01L21/76877 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/24 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/685 ,  H01L29/788 ,  H01L29/792 ,  H01L29/82

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure having memory cells, and a beam connected to an end portion of the structure. Each of the structure and the beam includes semiconductor layers stacked in a perpendicular direction. The beam includes a contact portion provided at one end of the beam, and a low resistance portion provided between the contact portion and the end portion of the structure.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括具有存储单元的鳍式堆叠层结构和连接到该结构的端部的光束。 结构和梁中的每一个包括沿垂直方向堆叠的半导体层。 梁包括设置在梁的一端的接触部分和设置在接触部分和结构的端部之间的低电阻部分。

公开(公告)号：US20130015519A1

公开(公告)日：2013-01-17

申请号：US13622612

申请日：2012-09-19

申请人： Shosuke Fujii ,  Kiwamu Sakuma ,  Jun Fujiki ,  Atsuhiro Kinoshita

发明人： Shosuke Fujii ,  Kiwamu Sakuma ,  Jun Fujiki ,  Atsuhiro Kinoshita

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L27/11551 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11565 ,  H01L27/11578

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes first to n-th semiconductor layers which are stacked in a first direction perpendicular to a surface of a semiconductor substrate and which extend in a second direction parallel to the surface of the semiconductor substrate, an electrode which extends in the first direction along side surfaces of the first to n-th semiconductor layers, the side surfaces of the first to n-th semiconductor layers exposing in a third direction perpendicular to the first and second directions, and first to n-th charge storage layers located between the first to n-th semiconductor layers and the electrode respectively. The first to n-th charge storage layers are separated from each other in areas between the first to n-th semiconductor layers.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一至第n半导体层，它们沿垂直于半导体衬底的表面的第一方向堆叠并且沿与半导体衬底的表面平行的第二方向延伸， 电极，其沿第一方向沿着第一至第n半导体层的侧表面延伸，第一至第n半导体层的侧表面在垂直于第一和第二方向的第三方向上暴露，以及第一至第n- 分别位于第一至第n半导体层之间的电荷存储层和电极。 第一至第n电荷存储层在第一至第n半导体层之间的区域中彼此分离。