利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

27 条记录 (耗时 0.026 秒)

    NONVOLATILE RESISTANCE CHANGE DEVICE
    4.
    发明申请
    NONVOLATILE RESISTANCE CHANGE DEVICE 有权
    非易失性电阻变化器件

    公开(公告)号：US20120091420A1

    公开(公告)日：2012-04-19

    申请号：US13052165

    申请日：2011-03-21

    申请人： Haruka KUSAI ,  Shosuke Fujii ,  Yasushi Nakasaki

    发明人： Haruka KUSAI ,  Shosuke Fujii ,  Yasushi Nakasaki

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  G11C11/5685 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/33 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/148

    摘要： According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner.

    摘要翻译： 根据一个实施例，布置在第二电极和第一电极之间并且第一导电细丝能够基于从第二电极提供的金属生长的第一可变电阻层，以及第n可变电阻层，其是第 布置在第n电极和第（n + 1）电极之间，并且其中生长速度不同于第一导电细丝的第n导电细丝能够基于从第（n + 1）个 ）电极，包括在第一电极层和第（n + 1）电极层之间串联电连接多根导电丝的结构，并且电阻以逐步的方式改变。

    Nonvolatile resistance change device
    5.
    发明授权
    Nonvolatile resistance change device 有权
    非易失性电阻变化装置

    公开(公告)号：US08450709B2

    公开(公告)日：2013-05-28

    申请号：US13052165

    申请日：2011-03-21

    申请人： Haruka Kusai ,  Shosuke Fujii ,  Yasushi Nakasaki

    发明人： Haruka Kusai ,  Shosuke Fujii ,  Yasushi Nakasaki

    IPC分类号： H01L29/02

    CPC分类号： H01L45/085 ,  G11C11/5685 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/33 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/148

    摘要： According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner.

    摘要翻译： 根据一个实施例，布置在第二电极和第一电极之间并且第一导电细丝能够基于从第二电极提供的金属生长的第一可变电阻层，以及第n可变电阻层，其是第 布置在第n电极和第（n + 1）电极之间，并且其中生长速度不同于第一导电细丝的第n导电细丝能够基于从第（n + 1）个 ）电极，包括在第一电极层和第（n + 1）电极层之间串联电连接多根导电丝的结构，并且电阻以逐步的方式改变。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US20130015519A1

    公开(公告)日：2013-01-17

    申请号：US13622612

    申请日：2012-09-19

    申请人： Shosuke Fujii ,  Kiwamu Sakuma ,  Jun Fujiki ,  Atsuhiro Kinoshita

    发明人： Shosuke Fujii ,  Kiwamu Sakuma ,  Jun Fujiki ,  Atsuhiro Kinoshita

    IPC分类号： H01L29/792 ,  H01L21/28

    CPC分类号： H01L27/11551 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11565 ,  H01L27/11578

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes first to n-th semiconductor layers which are stacked in a first direction perpendicular to a surface of a semiconductor substrate and which extend in a second direction parallel to the surface of the semiconductor substrate, an electrode which extends in the first direction along side surfaces of the first to n-th semiconductor layers, the side surfaces of the first to n-th semiconductor layers exposing in a third direction perpendicular to the first and second directions, and first to n-th charge storage layers located between the first to n-th semiconductor layers and the electrode respectively. The first to n-th charge storage layers are separated from each other in areas between the first to n-th semiconductor layers.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一至第n半导体层，它们沿垂直于半导体衬底的表面的第一方向堆叠并且沿与半导体衬底的表面平行的第二方向延伸， 电极，其沿第一方向沿着第一至第n半导体层的侧表面延伸，第一至第n半导体层的侧表面在垂直于第一和第二方向的第三方向上暴露，以及第一至第n- 分别位于第一至第n半导体层之间的电荷存储层和电极。 第一至第n电荷存储层在第一至第n半导体层之间的区域中彼此分离。

    NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS
    9.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS 有权
    非易失性半导体存储器

    公开(公告)号：US20120261742A1

    公开(公告)日：2012-10-18

    申请号：US13457054

    申请日：2012-04-26

    申请人： Izumi Hirano ,  Shosuke Fujii ,  Yuichiro Mitani ,  Naoki Yasuda

    发明人： Izumi Hirano ,  Shosuke Fujii ,  Yuichiro Mitani ,  Naoki Yasuda

    IPC分类号： H01L29/792

    CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/513

    摘要： A nonvolatile semiconductor memory apparatus according to an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer, the first insulating film being a single-layer film containing silicon oxide or silicon oxynitride; a charge trapping film formed on the first insulating film; a second insulating film formed on the charge trapping film; and a control gate electrode formed on the second insulating film. A metal oxide exists in an interface between the first insulating film and the charge trapping film, the metal oxide comprises material which is selected from the group of Al2O3, HfO2, ZrO2, TiO2, and MgO, the material is stoichiometric composition, and the charge trapping film includes material different from the material of the metal oxide.

    摘要翻译： 根据实施例的非易失性半导体存储装置包括：半导体层; 形成在所述半导体层上的第一绝缘膜，所述第一绝缘膜是含有氧化硅或氮氧化硅的单层膜; 形成在第一绝缘膜上的电荷捕获膜; 形成在电荷捕获膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。 金属氧化物存在于第一绝缘膜和电荷捕获膜之间的界面中，金属氧化物包括选自Al 2 O 3，HfO 2，ZrO 2，TiO 2和MgO的材料，该材料为化学计量组成，并且电荷 捕获膜包括与金属氧化物的材料不同的材料。