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公开(公告)号：US08823033B2
公开(公告)日：2014-09-02
申请号：US13688335
申请日：2012-11-29
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： A nitride semiconductor ultraviolet light-emitting device includes at least one first conductivity-type nitride semiconductor layer, a nitride semiconductor emission layer, at least one second conductivity-type nitride semiconductor layer and a transparent conductive film of crystallized Mgx1Zn1-x1O (0
摘要翻译： 氮化物半导体紫外线发光元件包括：至少一个第一导电型氮化物半导体层，氮化物半导体发光层，至少一个第二导电型氮化物半导体层和结晶的Mg x ZnZi 1-x O 1的透明导电膜（0
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2.发明申请NONVOLATILE SRAM/LATCH CIRCUIT USING CURRENT-INDUCED MAGNETIZATION REVERSAL MTJ 有权使用电流磁化反转MTJ的非易失性SRAM /锁存电路公开(公告)号：US20110273925A1
公开(公告)日：2011-11-10
申请号：US12674860
申请日：2008-07-31
CPC分类号： G11C14/0081
摘要： The present invention is a memory circuit that includes a bistable circuit that stores data, and a ferromagnetic tunnel junction device that nonvolatilely stores the data in the bistable circuit according to a magnetization direction of a ferromagnetic electrode free layer, the data nonvolatilely stored in the ferromagnetic tunnel junction device being able to be restored in the bistable circuit. According to the present invention, writing data to and reading data from the bistable circuit can be performed at high speed. In addition, even though a power source is shut down, it is possible to restore data nonvolatilely stored in the ferromagnetic tunnel junction devices to the bistable circuit.
摘要翻译： 本发明是一种包括存储数据的双稳态电路的存储电路，以及根据铁磁性电极自由层的磁化方向将数据永久性地存储在双稳态电路中的铁磁隧道结装置，该数据非易失存储在铁磁 隧道结装置能够在双稳态电路中恢复。 根据本发明，可以高速地执行向双稳态电路写入数据并从其中读出数据。 此外，即使关闭电源，也可以将稳定存储在铁磁隧道结装置中的数据恢复到双稳态电路。
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公开(公告)号：US07995632B2
公开(公告)日：2011-08-09
申请号：US12155186
申请日：2008-05-30
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0425 , H01S5/3201 , H01S5/3202 , H01S5/34333
摘要： In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.
摘要翻译： 在氮化物半导体激光器芯片中，为了抑制氮化物半导体层上的台阶的发展，基板具有（1-100）面作为主面，谐振器面垂直于主面，在切割 表面形成谐振器面，至少由条形波导的一侧形成蚀刻入蚀刻区域，以朝向氮化物半导体层的表面开口。
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公开(公告)号：US20080298409A1
公开(公告)日：2008-12-04
申请号：US12155186
申请日：2008-05-30
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0425 , H01S5/3201 , H01S5/3202 , H01S5/34333
摘要： In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.
摘要翻译： 在氮化物半导体激光器芯片中，为了抑制氮化物半导体层上的台阶的发展，基板具有（1-100）面作为主面，谐振器面垂直于主面，在切割 表面形成谐振器面，至少由条形波导的一侧形成蚀刻入蚀刻区域，以朝向氮化物半导体层的表面开口。
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5.发明申请Nitride-based semiconductor light-emitting device and method of manufacturing the same 审中-公开氮化物系半导体发光元件及其制造方法公开(公告)号：US20070051968A1
公开(公告)日：2007-03-08
申请号：US10556907
申请日：2004-04-18
IPC分类号： H01L33/00
CPC分类号： H01S5/02272 , H01L24/45 , H01L33/62 , H01L2224/05114 , H01L2224/05117 , H01L2224/05124 , H01L2224/05138 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/0517 , H01L2224/05171 , H01L2224/05172 , H01L2224/05178 , H01L2224/05179 , H01L2224/0518 , H01L2224/05181 , H01L2224/05184 , H01L2224/05605 , H01L2224/05609 , H01L2224/05611 , H01L2224/05616 , H01L2224/05617 , H01L2224/05618 , H01L2224/0562 , H01L2224/05624 , H01L2224/05638 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/45 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/12041 , H01S5/02212 , H01S5/02476 , H01S5/2231 , H01S5/32341 , H01L2224/48091 , H01L2924/00 , H01L2924/01014 , H01L2924/01032 , H01L2924/01021 , H01L2924/01057 , H01L2924/01039 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01062 , H01L2924/01063 , H01L2924/01065 , H01L2924/01052 , H01L2224/43 , H01L2924/01006
摘要： A nitride-based semiconductor light-emitting device having excellent reliability and long lifetime, and a method of manufacturing the same are provided. A nitride-based semiconductor light-emitting element chip, in which a nitride-based semiconductor layer and a first electrode are formed on a surface of an electrically conductive substrate and a second electrode is formed on a rear surface of the electrically conductive substrate, is mounted on a submount, and the submount having the nitride-based semiconductor light-emitting element chip mounted thereon is further mounted on a stem to form a nitride-based semiconductor light-emitting device.
摘要翻译： 提供了具有优异的可靠性和长寿命的氮化物基半导体发光器件及其制造方法。 在导电性基板的背面形成氮化物系半导体发光元件芯片，其中氮化物系半导体层和第一电极形成在导电性基板的表面上，第二电极形成在导电性基板的背面上 安装在基座上，并且其上安装有氮化物基半导体发光元件芯片的基座进一步安装在杆上以形成氮化物基半导体发光器件。
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公开(公告)号：US06281436B1
公开(公告)日：2001-08-28
申请号：US09499299
申请日：2000-02-07
IPC分类号： H05K506
CPC分类号： H05K3/403 , H01L23/10 , H01L23/49805 , H01L23/49827 , H01L2224/16 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/16195 , H01L2924/3025 , H03H9/1071 , H05K3/0052 , H05K3/244 , H05K3/284 , H05K3/3442 , H05K3/42 , H05K2201/09181 , H05K2201/10727 , H05K2203/0723 , H01L2224/0401
摘要： An electronic element is mounted on a resin wiring substrate and a cover member is bonded to the wiring substrate so as to cover the electronic element and constitute an encapsulation region. The encapsulation region houses the electronic element and has a cavity inside. A side electrode is formed of an electronically conductive through groove provided in a cover-member-bonding surface on the wiring substrate. A plating layer inside the electrically conductive through groove includes at least two metal layers including an Au plating layer and a Cu plating layer. The plating layer has conductors connected to circumferential peripheries of the electrically conductive through groove on upper and lower surfaces of the wiring substrate. Only the Cu plating layer is formed on the conductor on the upper surface of the wiring substrate to improve the reliability of bonding. The reliability of bonding of the resin wiring substrate and cover member which constitute the encapsulation region is improved, and therefore the reliability of the air-tight seal of the cavity inside the encapsulation region is improved.
摘要翻译： 电子元件安装在树脂布线基板上，并且盖构件被接合到布线基板以覆盖电子元件并构成封装区域。 封装区域容纳电子元件并且在其内部具有空腔。 侧面电极由配置在配线基板的盖部件接合面上的电子导电贯通槽形成。 导电通槽内的镀层包括至少两个包括Au镀层和Cu镀层的金属层。 电镀层具有连接到布线基板的上表面和下表面上的导电通孔的周向周边的导体。 在布线基板的上表面的导体上仅形成Cu镀层，以提高接合的可靠性。 提高了构成封装区域的树脂布线基板和盖部件的接合的可靠性，因此提高了封装区域内的空腔密封性的可靠性。
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公开(公告)号：US07724793B2
公开(公告)日：2010-05-25
申请号：US11605305
申请日：2006-11-29
CPC分类号： H01S5/227
摘要： At each side of a ridge stripe 110, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe 110.
摘要翻译： 在脊条110的每一侧，沟槽形成为相对于晶片表面雕刻的区域，使得在分裂时，在有源层附近的镜面处产生的表面不规则性被防止到达脊 条纹110。
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公开(公告)号：US20080304528A1
公开(公告)日：2008-12-11
申请号：US12155332
申请日：2008-06-03
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S2301/173
摘要： In a nitride semiconductor laser device so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (11-20) plane as the principal plane, the resonator end surface is perpendicular to the principal plane, and, in the cleavage surface forming the resonator end surface, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.
摘要翻译： 在氮化物半导体激光装置中，为了抑制氮化物半导体层上的台阶的发展，基板具有（11-20）面作为主面，共振器端面垂直于主面，在 形成谐振器端面的解理面至少由条状波导的一侧形成为朝向氮化物半导体层的表面开口的蚀刻区域的蚀刻部分。
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公开(公告)号：US20070121692A1
公开(公告)日：2007-05-31
申请号：US11605305
申请日：2006-11-29
IPC分类号： H01S5/00
CPC分类号： H01S5/227
摘要： At each side of a ridge stripe 110, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe 110.
摘要翻译： 在脊条110的每一侧，沟槽形成为相对于晶片表面雕刻的区域，使得在分裂时，在有源层附近的镜面处产生的表面不规则性被防止到达脊 条纹110。
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10.发明授权Nonvolatile SRAM/latch circuit using current-induced magnetization reversal MTJ 有权使用电流感应磁化反转MTJ的非易失性SRAM /锁存电路公开(公告)号：US08295079B2
公开(公告)日：2012-10-23
申请号：US12674860
申请日：2008-07-31
IPC分类号： G11C11/00
CPC分类号： G11C14/0081
摘要： The present invention is a memory circuit that includes a bistable circuit that stores data; and a ferromagnetic tunnel junction device that nonvolatilely stores the data stored in the bistable circuit according to a magnetization direction of a ferromagnetic electrode free layer, the data nonvolatilely stored in the ferromagnetic tunnel junction device being able to be restored in the bistable circuit. According to the present invention, writing data to and reading data from the bistable circuit can be performed at high speed. In addition, even though a power source is shut down, it is possible to restore data nonvolatilely stored in the ferromagnetic tunnel junction devices to the bistable circuit.
摘要翻译： 本发明是一种包含存储数据的双稳态电路的存储电路; 以及铁磁隧道结装置，其根据铁磁性电极自由层的磁化方向非易失地存储存储在双稳态电路中的数据，能够在双稳态电路中恢复铁磁隧道结装置中的非易失性存储的数据。 根据本发明，可以高速地执行向双稳态电路写入数据并从其中读出数据。 此外，即使关闭电源，也可以将稳定存储在铁磁隧道结装置中的数据恢复到双稳态电路。
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