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    Nitride semiconductor light-emitting device
    1.
    发明授权
    Nitride semiconductor light-emitting device 失效
    氮化物半导体发光器件

    公开(公告)号：US06900465B2

    公开(公告)日：2005-05-31

    申请号：US09809038

    申请日：2001-03-16

    申请人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa ,  Hiroyuki Kiyoku

    发明人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa ,  Hiroyuki Kiyoku

    IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L27/15

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

    摘要： A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.

    摘要翻译： 氮化物半导体发光器件具有由包含铟和镓的氮化物半导体构成的单量子阱结构或多量子阱的有源层。 提供由含有铝和镓的p型氮化物半导体制成的第一p型覆盖层与有源层的一个表面接触。 在第一p型覆盖层上设置由含有铝和镓的p型氮化物半导体构成的第二p型覆盖层。 第二p型覆盖层的带隙比第一p型覆盖层的带隙大。 提供与有源层的另一表面接触的n型半导体层。

    Nitride semiconductor light-emitting devices
    2.
    发明授权
    Nitride semiconductor light-emitting devices 有权
    氮化物半导体发光器件

    公开(公告)号：US06580099B2

    公开(公告)日：2003-06-17

    申请号：US09973817

    申请日：2001-10-11

    申请人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa ,  Hiroyuki Kiyoku

    发明人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa ,  Hiroyuki Kiyoku

    IPC分类号： H01L2924

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

    摘要： A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.

    摘要翻译： 氮化物半导体发光器件具有由包含铟和镓的氮化物半导体构成的单量子阱结构或多量子阱的有源层。 提供由含有铝和镓的p型氮化物半导体制成的第一p型覆盖层与有源层的一个表面接触。 在第一p型覆盖层上设置由含有铝和镓的p型氮化物半导体构成的第二p型覆盖层。 第二p型覆盖层的带隙比第一p型覆盖层的带隙大。 提供与有源层的另一表面接触的n型半导体层。

    Nitride semiconductor light-emitting device
    3.
    发明授权
    Nitride semiconductor light-emitting device 失效
    氮化物半导体发光器件

    公开(公告)号：US5777350A

    公开(公告)日：1998-07-07

    申请号：US565101

    申请日：1995-11-30

    申请人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa ,  Hiroyuki Kiyoku

    发明人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa ,  Hiroyuki Kiyoku

    IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

    摘要： A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.

    摘要翻译： 氮化物半导体发光器件具有由包含铟和镓的氮化物半导体构成的单量子阱结构或多量子阱的有源层。 提供由含有铝和镓的p型氮化物半导体制成的第一p型覆盖层与有源层的一个表面接触。 在第一p型覆盖层上设置由含有铝和镓的p型氮化物半导体构成的第二p型覆盖层。 第二p型覆盖层的带隙比第一p型覆盖层的带隙大。 提供与有源层的另一表面接触的n型半导体层。

    Nitride semiconductor laser device
    9.
    发明授权
    Nitride semiconductor laser device 有权

    公开(公告)号：US06711191B1

    公开(公告)日：2004-03-23

    申请号：US09519440

    申请日：2000-03-03

    申请人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

    发明人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/00

    摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 &mgr;m and the etching depth is below the thickness of the p-side cladding layer of 0.1 &mgr;m and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 &mgr;m, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.

    Nitride semiconductor device
    10.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US06677619B1

    公开(公告)日：2004-01-13

    申请号：US09714143

    申请日：2000-11-17

    申请人： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

    发明人： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/0002 ,  H01S5/3054 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

    摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

    摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。