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公开(公告)号：US06900465B2
公开(公告)日：2005-05-31
申请号：US09809038
申请日：2001-03-16
摘要： A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.
摘要翻译： 氮化物半导体发光器件具有由包含铟和镓的氮化物半导体构成的单量子阱结构或多量子阱的有源层。 提供由含有铝和镓的p型氮化物半导体制成的第一p型覆盖层与有源层的一个表面接触。 在第一p型覆盖层上设置由含有铝和镓的p型氮化物半导体构成的第二p型覆盖层。 第二p型覆盖层的带隙比第一p型覆盖层的带隙大。 提供与有源层的另一表面接触的n型半导体层。
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公开(公告)号：US06580099B2
公开(公告)日：2003-06-17
申请号：US09973817
申请日：2001-10-11
IPC分类号： H01L2924
摘要： A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.
摘要翻译： 氮化物半导体发光器件具有由包含铟和镓的氮化物半导体构成的单量子阱结构或多量子阱的有源层。 提供由含有铝和镓的p型氮化物半导体制成的第一p型覆盖层与有源层的一个表面接触。 在第一p型覆盖层上设置由含有铝和镓的p型氮化物半导体构成的第二p型覆盖层。 第二p型覆盖层的带隙比第一p型覆盖层的带隙大。 提供与有源层的另一表面接触的n型半导体层。
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公开(公告)号：US5777350A
公开(公告)日：1998-07-07
申请号：US565101
申请日：1995-11-30
摘要： A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.
摘要翻译： 氮化物半导体发光器件具有由包含铟和镓的氮化物半导体构成的单量子阱结构或多量子阱的有源层。 提供由含有铝和镓的p型氮化物半导体制成的第一p型覆盖层与有源层的一个表面接触。 在第一p型覆盖层上设置由含有铝和镓的p型氮化物半导体构成的第二p型覆盖层。 第二p型覆盖层的带隙比第一p型覆盖层的带隙大。 提供与有源层的另一表面接触的n型半导体层。
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公开(公告)号：US07083679B2
公开(公告)日：2006-08-01
申请号：US09986332
申请日：2001-11-08
CPC分类号： C30B25/02 , B82Y20/00 , C23C16/042 , C23C16/303 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/16 , H01S5/0213 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
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5.发明授权Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer 有权氮化物半导体器件具有氮化物半导体衬底和含铟活性层公开(公告)号：US07442254B2
公开(公告)日：2008-10-28
申请号：US11598744
申请日：2006-11-14
IPC分类号： H01L21/205
CPC分类号： C30B25/02 , B82Y20/00 , C23C16/042 , C23C16/303 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/16 , H01S5/0213 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
摘要翻译： 公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。
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6.发明申请Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device 有权氮化物半导体生长方法，氮化物半导体衬底和氮化物半导体器件公开(公告)号：US20050202682A1
公开(公告)日：2005-09-15
申请号：US11052835
申请日：2005-02-09
IPC分类号： C23C16/04 , C23C16/30 , C30B25/02 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/16 , H01S5/02 , H01L21/31 , H01L21/469
CPC分类号： C30B25/02 , B82Y20/00 , C23C16/042 , C23C16/303 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/16 , H01S5/0213 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
摘要翻译： 公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。
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7.发明授权Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device 失效氮化物半导体生长方法，氮化物半导体衬底和氮化物半导体器件公开(公告)号：US06940103B2
公开(公告)日：2005-09-06
申请号：US10600833
申请日：2003-06-23
IPC分类号： C23C16/04 , C23C16/30 , C30B25/02 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/16 , H01S5/02 , C30B23/04 , C30B25/04
CPC分类号： C30B25/02 , B82Y20/00 , C23C16/042 , C23C16/303 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/16 , H01S5/0213 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
摘要翻译： 公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。
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8.发明授权Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device 有权氮化物半导体生长方法，氮化物半导体衬底和氮化物半导体器件公开(公告)号：US06756611B2
公开(公告)日：2004-06-29
申请号：US10261487
申请日：2002-10-02
IPC分类号： H01L2358
CPC分类号： C30B25/02 , B82Y20/00 , C23C16/042 , C23C16/303 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/16 , H01S5/0213 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
摘要翻译： 公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。
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9.发明授权Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device 有权生长氮化物半导体，氮化物半导体衬底和氮化物半导体器件的方法
公开(公告)号：US6153010A
公开(公告)日：2000-11-28
申请号：US202141
申请日：1998-12-09
IPC分类号： C23C16/04 , C23C16/30 , C30B25/02 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/16 , H01S5/02 , C30B23/04 , C30B25/04
CPC分类号： C30B25/02 , B82Y20/00 , C23C16/042 , C23C16/303 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L21/02502 , H01L33/16 , H01S2301/173 , H01S2304/12 , H01S5/0213 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/34333
摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
摘要翻译： PCT No.PCT / JP98 / 01640 Sec。 371 1998年12月9日第 102（e）日期1998年12月9日PCT提交1998年4月9日PCT公布。 出版物WO98 / 47170 日期：1998年10月22日公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。
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10.再颁专利Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer 有权氮化物半导体器件具有氮化物半导体衬底和含铟活性层公开(公告)号：USRE42770E1
公开(公告)日：2011-10-04
申请号：US12914307
申请日：2010-10-28
IPC分类号： H01L21/205
CPC分类号： C30B25/02 , B82Y20/00 , C23C16/042 , C23C16/303 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/16 , H01S5/0213 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
摘要翻译： 公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。
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