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23 条记录 (耗时 0.015 秒)

    Liquid crystal device with a ferroelectric film and method for manufacturing the same
    1.
    发明授权
    Liquid crystal device with a ferroelectric film and method for manufacturing the same 失效
    具有铁电体膜的液晶装置及其制造方法

    公开(公告)号：US4919633A

    公开(公告)日：1990-04-24

    申请号：US184009

    申请日：1988-04-20

    申请人： Shumpei Yamazaki ,  Masashiko Sato ,  Hiroyuki Sakayori

    发明人： Shumpei Yamazaki ,  Masashiko Sato ,  Hiroyuki Sakayori

    IPC分类号： G02F1/1337 ,  G02F1/135

    CPC分类号： G02F1/1358 ,  G02F1/133711

    摘要： An improved liquid crystal device is described such as a display. The device comprises a pair of substrates, a liquid crystal layer, an electrode arrangement, and a ferroelectric film. The ferroelectric film is formed on the inside of the substrate by spinning method using a mixture of a ferroelectric material and an organic resin. When coating, the mixture is diluted with a solvent so that the ferroelectric film can be formed as a thin film. In advance of curring, the ferroelectric film is subjected to an electric field and its dipole moment is aligned and fixed in a direction perpendicular to the substrate. In virtue of the dipole moment, the liquid crystal device can be controlled by applying a voltage in one direction with a high stability.

    Liquid crystal device with a ferroelectric film
    2.
    发明授权
    Liquid crystal device with a ferroelectric film 失效
    具有铁电薄膜的液晶装置

    公开(公告)号：US4850680A

    公开(公告)日：1989-07-25

    申请号：US94872

    申请日：1987-09-10

    申请人： Shumpei Yamazaki ,  Masahiko Sato ,  Hiroyuki Sakayori

    发明人： Shumpei Yamazaki ,  Masahiko Sato ,  Hiroyuki Sakayori

    IPC分类号： G02F1/1337 ,  G02F1/135

    CPC分类号： G02F1/1358 ,  G02F1/133711

    摘要： An improved liquid crystal device is described such as a display. The device comprises a pair of substrates, a liquid crystal layer, an electrode arrangement, and a ferroelectric film. The ferroelectric film is formed on the inside of the substrate by spining method using a mixture of a ferroelectric material and an organic resin. When coating, the mixture is diluted with a solvent so that the ferroelectric film can be formed as a thin film. In advance of curring, the ferroelectric film is subjected to an electric field and its dipole moment is aligned and fixed in a direction perpendicular to the substrate. In virtue of the dipole moment, the liquid crystal device can be controlled by applying a voltage in one direction with a high stability.

    摘要翻译： 描述了改进的液晶装置，例如显示器。 该装置包括一对基板，液晶层，电极装置和铁电体膜。 通过使用铁电体材料和有机树脂的混合物的旋转法，在基板的内部形成铁电体膜。 当涂布时，用溶剂稀释混合物，使得铁电膜可以形成为薄膜。 在卷曲之前，铁电体膜经受电场，并且其偶极矩在垂直于衬底的方向上对准和固定。 凭借偶极矩，可以通过以高稳定性向一个方向施加电压来控制液晶装置。

    Microwave enhanced CVD method for coating plastic with carbon films
    3.
    发明授权
    Microwave enhanced CVD method for coating plastic with carbon films 失效
    用碳膜涂覆塑料的微波增强CVD方法

    公开(公告)号：US5601883A

    公开(公告)日：1997-02-11

    申请号：US314456

    申请日：1994-09-28

    申请人： Shumpei Yamazaki

    发明人： Shumpei Yamazaki

    IPC分类号： C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  B05D3/06 ,  C23C16/00

    CPC分类号： C23C16/26 ,  C23C16/511

    摘要： A microwave enhanced chemical vapor deposition method is provided for coating plastic articles with crystalline carbon films. First, a reactive gas including hydrogen gas and a carbon containing raw material gas is introduced into a reaction chamber. Next, a magnetic field is established in the reaction chamber. Microwaves are next introduced into the chamber to create a cyclotron resonance in order to form a plasma of carbon and hydrogen containing gas. The carbon containing plasma deposits a coating of a crystalline and amorphous carbon on a substrate placed within the reaction chamber, while the hydrogen plasma simultaneously etches away the amorphous carbon, thereby leaving only crystalline carbon. The method is particularly adapted for the deposition of crystalline carbon films on plastic materials, as the substrate is not required to be heated in order to receive a layer of crystalline carbon.

    摘要翻译： 提供微波增强化学气相沉积方法用于涂覆具有结晶碳膜的塑料制品。 首先，将包含氢气和含碳原料气体的反应性气体引入反应室。 接下来，在反应室中建立磁场。 接下来，将微波引入室中以产生回旋加速器共振，以便形成含碳和氢的气体的等离子体。 含碳等离子体在放置在反应室内的衬底上沉积结晶和无定形碳的涂层，同时氢等离子体同时蚀刻掉无定形碳，从而仅留下结晶碳。 该方法特别适用于将结晶碳膜沉积在塑料材料上，因为不需要加热基底以便接收一层结晶碳。

    Elongated superconductive member
    6.
    发明授权
    Elongated superconductive member 失效
    细长超导体

    公开(公告)号：US5987731A

    公开(公告)日：1999-11-23

    申请号：US473950

    申请日：1995-06-07

    申请人： Shumpei Yamazaki

    发明人： Shumpei Yamazaki

    IPC分类号： B21C37/04 ,  C23C2/04 ,  C23C8/02 ,  C23C8/10 ,  C23C26/00 ,  H01L39/24

    CPC分类号： H01L39/2425 ,  B21C37/042 ,  B21C37/045 ,  C23C2/04 ,  C23C26/00 ,  C23C8/02 ,  C23C8/10 ,  H01L39/248 ,  Y10T29/49014 ,  Y10T428/12486

    摘要： A method for manufacturing an elongated member from a superconducting ceramic material comprising the steps of providing a hollow supporting body of metal or a metallic compound having a hollow inside section therein, introducing a superconducting ceramic material into the hollow inside section of the hollow supporting body, drying the above liquid, so that the superconducting ceramic material is coated on the inside of the supporting body; and firing the supporting body and the ceramic material in an oxidizing atmosphere.

    摘要翻译： 一种从超导陶瓷材料制造细长构件的方法，包括以下步骤：在其中提供具有中空内部部分的金属或金属化合物的中空支撑体，将超导陶瓷材料引入中空支撑体的中空内部， 干燥上述液体，使超导陶瓷材料涂覆在支撑体的内侧; 并在氧化气氛中烧制支撑体和陶瓷材料。

    Method of making semiconductor device
    9.
    发明授权
    Method of making semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US4690717A

    公开(公告)日：1987-09-01

    申请号：US800694

    申请日：1985-11-22

    申请人： Shumpei Yamazaki

    发明人： Shumpei Yamazaki

    IPC分类号： H01L31/0376 ,  H01L31/075 ,  H01L21/205

    CPC分类号： H01L31/075 ,  H01L31/03762 ,  Y02E10/548 ,  Y10S438/925

    摘要： A semiconductor photoelectric conversion device has a conductive substrate or a first conductive layer formed on a suitable substrate, a non-single-crystal semiconductor laminate member formed on the conductive substrate or first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN, or NIP junction, and a second conductive layer formed on the non-single-crystal semiconductor laminate member. The I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen, carbon, or phosphorus only in such a low concentration as 5.times.10.sup.18 atoms/cm.sup.3 or less, 4.times.10.sup.18 atoms/cm.sup.3 or less, or 5.times.10.sup.15 atoms/cm.sup.3 or less, respectively.

    摘要翻译： 半导体光电转换装置具有形成在合适的基板上的导电基板或第一导电层，形成在导电基板或第一导电层上的非单晶半导体层叠体，其包括至少一个I型非单晶半导体层叠体， 晶体半导体层，并且其中形成有至少一个PI，NI，PIN或NIP结，以及形成在非单晶半导体层叠构件上的第二导电层。 非单晶半导体层叠体的I型非单晶半导体层仅含有5×10 18原子/ cm 3以下，4×10 18原子/ cm 3以下的低浓度的氧，碳或磷，或 5×10 15原子/ cm3以下。