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    Methods of forming semiconductor structures
    1.
    发明授权
    Methods of forming semiconductor structures 有权
    形成半导体结构的方法

    公开(公告)号：US08466070B2

    公开(公告)日：2013-06-18

    申请号：US13151806

    申请日：2011-06-02

    申请人： Hsing-Fei Chou ,  Chia-Hua Chu ,  Jieh-Jang Chen ,  Feng-Jia Shiu ,  Hung Chang Hsieh

    发明人： Hsing-Fei Chou ,  Chia-Hua Chu ,  Jieh-Jang Chen ,  Feng-Jia Shiu ,  Hung Chang Hsieh

    IPC分类号： H01L21/311

    CPC分类号： B81C1/00063

    摘要： A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed.

    摘要翻译： 形成半导体结构的方法包括在衬底中形成开口。 形成介电层并基本上与开口保持一致。 在开口内形成牺牲结构，覆盖电介质层的一部分。 通过使用牺牲结构作为蚀刻掩模层来去除介电层的一部分。 牺牲结构被去除。

    Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same
    3.
    发明授权
    Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same 有权
    具有通孔的微电子机械系统（MEMS）结构通孔及其形成方法

    公开(公告)号：US09466532B2

    公开(公告)日：2016-10-11

    申请号：US13429029

    申请日：2012-03-23

    申请人： Chia-Hua Chu ,  Kuei-Sung Chang ,  Te-Hao Lee

    发明人： Chia-Hua Chu ,  Kuei-Sung Chang ,  Te-Hao Lee

    IPC分类号： H01L21/768 ,  B81C1/00 ,  B82Y30/00

    CPC分类号： B81B7/007 ,  B81B2207/07 ,  B81B2207/095 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/036 ,  B82Y30/00 ,  H01L21/76898

    摘要： The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures.

    摘要翻译： 本公开内容包括微机电系统（MEMS）结构及其形成方法。 MEMS结构的衬底通过在高加工温度下的熔融粘合而结合在一起，这使得在MEMS结构的密封腔之前能够更好地从基板中的电介质材料中去除化学物质。 MEMS结构的熔合结合减少了化学物质的脱气，并与腔形成过程相容。 通过熔接结合的MEMS结构由于较高的接合率而与共晶接合机械地更强。 此外，熔接可以在MEMS结构中形成贯穿衬底通孔（TSV）。

    Cover structure
    4.
    发明授权
    Cover structure 失效
    封面结构

    公开(公告)号：US08573990B2

    公开(公告)日：2013-11-05

    申请号：US13314298

    申请日：2011-12-08

    申请人： Hsu-Chih Cheng ,  Chia-Hua Chu ,  Bo-Shiun Luo

    发明人： Hsu-Chih Cheng ,  Chia-Hua Chu ,  Bo-Shiun Luo

    IPC分类号： H01R13/44

    CPC分类号： H01R13/447

    摘要： A cover structure, adapted for mounting on a housing that is formed with an opening and a connection base having a plugging end exposing by the opening, comprising: a frame, formed with a first end and a second end that are arranged opposite to each other with respect to the radial of a coupling position where the frame is coupled to the housing through a pivot axis of two pivot blocks in a direction parallel to a first axis direction and enabling the first end to expose by the opening; and an elastic element, disposed inside the housing for providing an elastic force to the frame, for enabling the first end and the second end to move relative to each other centering the coupling position; wherein an accommodation space is formed between the frame and the connection base so as to be used for receiving a plug of a connector.

    摘要翻译： 一种盖结构，适于安装在形成有开口的壳体和具有由开口暴露的堵塞端的连接基座，包括：框架，形成有彼此相对布置的第一端和第二端 相对于联接位置的径向，其中框架通过两个枢转块的枢转轴线在平行于第一轴线方向的方向上联接到壳体，并且使得第一端能够被开口暴露; 以及弹性元件，其设置在所述壳体内部，用于向所述框架提供弹性力，以使得所述第一端和所述第二端能够以所述联接位置为中心相对于彼此移动; 其中在所述框架和所述连接基座之间形成容纳空间，以便用于容纳连接器的插头。

    Microstructure device with an improved anchor
    6.
    发明授权
    Microstructure device with an improved anchor 有权
    具有改进锚的微结构装置

    公开(公告)号：US08343789B2

    公开(公告)日：2013-01-01

    申请号：US12858202

    申请日：2010-08-17

    申请人： Chung-Hsien Lin ,  Chun-Wen Cheng ,  Chia-Hua Chu ,  Yi Heng Tsai

    发明人： Chung-Hsien Lin ,  Chun-Wen Cheng ,  Chia-Hua Chu ,  Yi Heng Tsai

    IPC分类号： H01L21/02

    CPC分类号： H01L29/84 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81C1/00571

    摘要： The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity.

    摘要翻译： 本公开提供了一种制造具有改进的锚的微结构装置的系统。 利用改进的锚固件制造微结构器件的方法包括提供衬底并在衬底上形成氧化物层。 然后，在氧化物层中蚀刻空腔，使得空腔包括在氧化物层中的侧壁。 然后将微结构器件层与空腔上的氧化物层结合。 形成微结构器件，在器件层中蚀刻沟槽以限定微结构器件的外边界。 在一个实施例中，外部边界基本上在空腔的侧壁的外侧。 然后，通过器件层中的沟槽蚀刻空腔的侧壁，从而将微结构器件悬浮在空腔上。

    Wafer level packaging
    7.
    发明授权
    Wafer level packaging 有权
    晶圆级包装

    公开(公告)号：US08330559B2

    公开(公告)日：2012-12-11

    申请号：US12879216

    申请日：2010-09-10

    申请人： Chun-Wen Cheng ,  Chung-Hsien Lin ,  Chia-Hua Chu

    发明人： Chun-Wen Cheng ,  Chung-Hsien Lin ,  Chia-Hua Chu

    IPC分类号： H03H9/00

    CPC分类号： B81B7/0032 ,  B81C1/00269 ,  B81C1/00333

    摘要： A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer.

    摘要翻译： 晶片级封装的方法包括提供包括掩埋氧化物层和顶部氧化物层的衬底，以及蚀刻衬底以在掩埋氧化物层之上形成开口和在开口之间的微电子机械系统（MEMS）谐振器元件， 封装在掩埋氧化物层内的MEMS谐振器元件，顶部氧化物层和侧壁氧化物层。 该方法还包括用多晶硅填充开口以形成邻近MEMS谐振器元件的多晶硅电极，去除与MEMS谐振器元件相邻的顶部氧化物层和侧壁氧化物层，将多晶硅电极连接到互补金属氧化物半导体（CMOS ）晶片或载体晶片，去除邻近MEMS谐振器元件的掩埋氧化物层，以及将衬底接合到封盖晶片，以密封封装晶片和CMOS晶片或载体晶片之一中的MEMS谐振器元件。

    MEMS SWITCH WITH REDUCED DIELECTRIC CHARGING EFFECT
    8.
    发明申请
    MEMS SWITCH WITH REDUCED DIELECTRIC CHARGING EFFECT 有权
    具有降低电介质充电效应的MEMS开关

    公开(公告)号：US20120125747A1

    公开(公告)日：2012-05-24

    申请号：US12951492

    申请日：2010-11-22

    申请人： Chia-Hua Chu ,  Chung-Hsien Lin ,  Chun-Wen Cheng

    发明人： Chia-Hua Chu ,  Chung-Hsien Lin ,  Chun-Wen Cheng

    IPC分类号： H01H57/00 ,  H01H11/00

    CPC分类号： H01H11/00 ,  H01G5/18 ,  H01H49/00 ,  H01H59/0009 ,  H01H2001/0084 ,  H01P1/127 ,  Y10T29/49105

    摘要： The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.

    摘要翻译： 本公开在一个实施例中提供了一种半导体器件，其包括具有衬底的MEMS开关，设置在衬底上方的第一电介质层，以及设置在第一电介质层上方的底部信号电极，凸块和底部致动电极。 MEMS开关还包括封装底部信号电极的第二电介质层和包括设置在底部信号电极上方的顶部信号电极的可移动部件和设置在底部致动电极和凸起上方的顶部致动电极，其中顶部致动电极 电连接到凸块。 还公开了一种制造MEMS开关的方法。

    MICROSTRUCTURE WITH AN ENHANCED ANCHOR
    9.
    发明申请
    MICROSTRUCTURE WITH AN ENHANCED ANCHOR 有权
    具有增强锚的微结构

    公开(公告)号：US20120068276A1

    公开(公告)日：2012-03-22

    申请号：US12887320

    申请日：2010-09-21

    申请人： Chung-Hsien Lin ,  Chia-Hua Chu ,  Chun-Wen Cheng

    发明人： Chung-Hsien Lin ,  Chia-Hua Chu ,  Chun-Wen Cheng

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： B81C1/00571 ,  B81B2203/0109 ,  B81B2203/0307 ,  B81C1/00063

    摘要： The present disclosure provides a microstructure device with an enhanced anchor and a narrow air gap. One embodiment of a microstructure device provided herein includes a layered wafer. The layered wafer includes a silicon handle layer, a buried oxide layer formed on the handle layer, and a silicon device layer formed on the buried oxide layer. A top oxide layer is formed on the device layer. The top oxide layer, the device layer, and the buried oxide layer are etched, thereby forming trenches to create an anchor and a microstructure device in the device layer. In process of fabricating the device, a thermal oxide layer is formed along sides of the microstructure device to enclose the microstructure device in the buried oxide layer, the top oxide layer and the thermal oxide layer. Then, a poly layer if formed to fill in the trenches and enclose the anchor. After the poly layer fills in the trenches, the oxide layers enclosing the microstructure device are etched away, releasing the microstructure device.

    摘要翻译： 本公开提供了具有增强的锚和窄气隙的微结构装置。 本文提供的微结构器件的一个实施例包括分层晶片。 层状晶片包括硅手柄层，形成在手柄层上的掩埋氧化物层和形成在掩埋氧化物层上的硅器件层。 在器件层上形成顶部氧化物层。 蚀刻顶部氧化物层，器件层和掩埋氧化物层，从而形成沟槽，以在器件层中形成锚和微结构器件。 在制造该器件的过程中，沿着微结构器件的侧面形成热氧化物层，以将微结构器件封装在掩埋氧化物层，顶部氧化物层和热氧化物层中。 然后，如果形成多层以填充沟槽并包围锚。 在多层填充沟槽之后，将包围微结构器件的氧化物层蚀刻掉，释放微结构器件。

    MEMS switch with reduced dielectric charging effect
    10.
    发明授权
    MEMS switch with reduced dielectric charging effect 有权
    具有降低介电充电效应的MEMS开关

    公开(公告)号：US08797127B2

    公开(公告)日：2014-08-05

    申请号：US12951492

    申请日：2010-11-22

    申请人： Chia-Hua Chu ,  Chung-Hsien Lin ,  Chun-Wen Cheng

    发明人： Chia-Hua Chu ,  Chung-Hsien Lin ,  Chun-Wen Cheng

    IPC分类号： H01H51/22

    CPC分类号： H01H11/00 ,  H01G5/18 ,  H01H49/00 ,  H01H59/0009 ,  H01H2001/0084 ,  H01P1/127 ,  Y10T29/49105

    摘要： The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.

    摘要翻译： 本公开在一个实施例中提供了一种半导体器件，其包括具有衬底的MEMS开关，设置在衬底上方的第一电介质层，以及设置在第一电介质层上方的底部信号电极，凸块和底部致动电极。 MEMS开关还包括封装底部信号电极的第二电介质层和包括设置在底部信号电极上方的顶部信号电极的可移动部件和设置在底部致动电极和凸起上方的顶部致动电极，其中顶部致动电极 电连接到凸块。 还公开了一种制造MEMS开关的方法。