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    ADVANCED MULTILAYER DIELECTRIC CAP WITH IMPROVED MECHANICAL AND ELECTRICAL PROPERTIES
    5.
    发明申请
    ADVANCED MULTILAYER DIELECTRIC CAP WITH IMPROVED MECHANICAL AND ELECTRICAL PROPERTIES 失效
    具有改进的机械和电气特性的高级多层电介质盖

    公开(公告)号：US20090224374A1

    公开(公告)日：2009-09-10

    申请号：US12042873

    申请日：2008-03-05

    申请人： Ritwik Bhatia ,  Griselda Bonilla ,  Alfred Grill ,  Joshua L. Herman ,  Son Van Nguyen ,  E. Todd Ryan ,  Hosadurga Shobha

    发明人： Ritwik Bhatia ,  Griselda Bonilla ,  Alfred Grill ,  Joshua L. Herman ,  Son Van Nguyen ,  E. Todd Ryan ,  Hosadurga Shobha

    IPC分类号： H01L23/538 ,  H01L23/58 ,  H01L21/31 ,  H01L21/768

    CPC分类号： H01L21/76834 ,  H01L21/02348 ,  H01L21/76832

    摘要： A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or substantially higher mechanical stability during a post-deposition curing treatment, and including Si—N bonds at the interface of a conductive material such as, for example, Cu. The dielectric cap exhibits a high compressive stress and high modulus and is still remain compressive stress under post-deposition curing treatments for, for example: copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.

    摘要翻译： 公开了包含相同方法和相关方法的电介质盖，互连结构。 本发明的电介质盖包括多层介电材料堆叠，其中叠层的至少一层在后沉积固化处理期间具有良好的抗氧化性，Cu扩散和/或显着更高的机械稳定性，并且包括Si-N键在 导电材料，例如Cu。 电介质盖表现出高压缩应力和高模量，并且在后沉积固化处理时仍然保持压应力，例如：铜低k后端（BEOL）纳米电子器件，导致较少的膜和器件 开裂和可靠性提高。

    SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES
    6.
    发明申请
    SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES 有权
    用于Cu互连结构的自对准复合材料M-MOx /电介质盖

    公开(公告)号：US20110162874A1

    公开(公告)日：2011-07-07

    申请号：US12683590

    申请日：2010-01-07

    申请人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Hosadurga Shobha ,  Tuan A. Vo

    发明人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Hosadurga Shobha ,  Tuan A. Vo

    IPC分类号： H05K1/09 ,  B05D5/12 ,  B05D3/06 ,  B05D3/04

    CPC分类号： H01L21/76849 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867

    摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap.

    摘要翻译： 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括具有约4.0或更小的介电常数的互连电介质材料。 互连电介质材料在其中具有填充有含Cu材料的至少一个开口。 至少一个开口内的含Cu材料具有与互连电介质材料的上表面共面的暴露的上表面。 互连结构还包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。 互连结构还包括位于复合M-MOx帽的至少上表面上的介电帽。

    Method of forming an interconnect structure
    7.
    发明授权
    Method of forming an interconnect structure 有权
    形成互连结构的方法

    公开(公告)号：US09502288B2

    公开(公告)日：2016-11-22

    申请号：US13420728

    申请日：2012-03-15

    申请人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Hosadurga Shobha ,  Tuan A. Vo

    发明人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Hosadurga Shobha ,  Tuan A. Vo

    IPC分类号： H05K3/02 ,  H05K3/10 ,  H01L21/768

    CPC分类号： H01L21/76849 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76867

    摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.

    摘要翻译： 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。

    Advanced multilayer dielectric cap with improved mechanical and electrical properties
    10.
    发明授权
    Advanced multilayer dielectric cap with improved mechanical and electrical properties 失效
    先进的多层介质盖，具有改善的机械和电气性能

    公开(公告)号：US07737052B2

    公开(公告)日：2010-06-15

    申请号：US12042873

    申请日：2008-03-05

    申请人： Ritwik Bhatia ,  Griselda Bonilla ,  Alfred Grill ,  Joshua L. Herman ,  Son Van Nguyen ,  E. Todd Ryan ,  Hosadurga Shobha

    发明人： Ritwik Bhatia ,  Griselda Bonilla ,  Alfred Grill ,  Joshua L. Herman ,  Son Van Nguyen ,  E. Todd Ryan ,  Hosadurga Shobha

    IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L23/58 ,  H01L23/48

    CPC分类号： H01L21/76834 ,  H01L21/02348 ,  H01L21/76832

    摘要： A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or substantially higher mechanical stability during a post-deposition curing treatment, and including Si—N bonds at the interface of a conductive material such as, for example, Cu. The dielectric cap exhibits a high compressive stress and high modulus and is still remain compressive stress under post-deposition curing treatments for, for example: copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.

    摘要翻译： 公开了包含相同方法和相关方法的电介质盖，互连结构。 本发明的电介质盖包括多层介电材料堆叠，其中叠层的至少一层在后沉积固化处理期间具有良好的抗氧化性，Cu扩散和/或显着更高的机械稳定性，并且包括Si-N键在 导电材料，例如Cu。 电介质盖表现出高压缩应力和高模量，并且在后沉积固化处理时仍然保持压应力，例如：铜低k后端（BEOL）纳米电子器件，导致较少的膜和器件 开裂和可靠性提高。