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1.发明授权公开(公告)号：US08476743B2
公开(公告)日：2013-07-02
申请号：US13228857
申请日：2011-09-09
CPC分类号： H01L21/02112 , H01B3/12 , H01L21/02274 , H01L21/02318 , H01L21/02348 , H01L21/02351 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/53252 , H01L23/53276 , H01L29/1054 , H01L29/1606 , H01L29/456 , H01L29/4908 , H01L29/4983 , H01L29/78648 , H01L2924/0002 , H01L2924/00
摘要： A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
摘要翻译： 提供具有等于或小于3.6的介电常数的富碳碳氮化硼介电膜，其可用作各种电子器件中的组分。 富碳碳氮化硼电介质膜具有C x B y N z的化学式，其中x为35原子％以上，y为6原子％〜32原子％，z为8原子％〜33原子％。
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2.发明申请公开(公告)号：US20130062753A1
公开(公告)日：2013-03-14
申请号：US13228857
申请日：2011-09-09
CPC分类号： H01L21/02112 , H01B3/12 , H01L21/02274 , H01L21/02318 , H01L21/02348 , H01L21/02351 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/53252 , H01L23/53276 , H01L29/1054 , H01L29/1606 , H01L29/456 , H01L29/4908 , H01L29/4983 , H01L29/78648 , H01L2924/0002 , H01L2924/00
摘要： A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
摘要翻译： 提供具有等于或小于3.6的介电常数的富碳碳氮化硼介电膜，其可用作各种电子器件中的组分。 富碳碳氮化硼电介质膜具有C x B y N z的化学式，其中x为35原子％以上，y为6原子％〜32原子％，z为8原子％〜33原子％。
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公开(公告)号：US08779600B2
公开(公告)日：2014-07-15
申请号：US13344009
申请日：2012-01-05
申请人： Son Van Nguyen , Griselda Bonilla , Alfred Grill , Thomas J. Haigh, Jr. , Satyanarayana V. Nitta
发明人： Son Van Nguyen , Griselda Bonilla , Alfred Grill , Thomas J. Haigh, Jr. , Satyanarayana V. Nitta
IPC分类号： H01L29/40
CPC分类号： H01L23/5384 , H01L21/02167 , H01L21/02274 , H01L21/76801 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/249969 , H01L2924/00
摘要： A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.
摘要翻译： 一种电介质堆叠和使用单步沉积工艺将叠层沉积到衬底的方法。 电介质堆叠包括具有不同组成原子百分比，密度和孔隙率的相同元素化合物的致密层和多孔层。 该堆叠增强机械模量强度并增强氧化和铜扩散阻挡性能。 电介质叠层在整个网络中具有无机或杂化的无机 - 有机随机三维共价键，其含有不同化学组成的不同区域，例如与相同类型材料的低k组分相邻但具有较高孔隙率的盖组分 。
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4.发明申请SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES 有权用于Cu互连结构的自对准复合材料M-MOx /电介质盖公开(公告)号：US20110162874A1
公开(公告)日：2011-07-07
申请号：US12683590
申请日：2010-01-07
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap.
摘要翻译： 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括具有约4.0或更小的介电常数的互连电介质材料。 互连电介质材料在其中具有填充有含Cu材料的至少一个开口。 至少一个开口内的含Cu材料具有与互连电介质材料的上表面共面的暴露的上表面。 互连结构还包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。 互连结构还包括位于复合M-MOx帽的至少上表面上的介电帽。
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公开(公告)号：US09502288B2
公开(公告)日：2016-11-22
申请号：US13420728
申请日：2012-03-15
IPC分类号： H05K3/02 , H05K3/10 , H01L21/768
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.
摘要翻译： 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。
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6.发明申请SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES 有权用于Cu互连结构的自对准复合材料M-MOx /电介质盖公开(公告)号：US20120175023A1
公开(公告)日：2012-07-12
申请号：US13420728
申请日：2012-03-15
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.
摘要翻译： 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。
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公开(公告)号：US20130175697A1
公开(公告)日：2013-07-11
申请号：US13344009
申请日：2012-01-05
申请人： Son Van Nguyen , Griselda Bonilla , Alfred Grill , Thomas J. Haigh, JR. , Satyanarayana V. Nitta
发明人： Son Van Nguyen , Griselda Bonilla , Alfred Grill , Thomas J. Haigh, JR. , Satyanarayana V. Nitta
IPC分类号： H01L23/538 , H01L21/31 , B32B9/04
CPC分类号： H01L23/5384 , H01L21/02167 , H01L21/02274 , H01L21/76801 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/249969 , H01L2924/00
摘要： A dielectric stack and method of depositing the stack to a substrate using a single step deposition process. The dielectric stack includes a dense layer and a porous layer of the same elemental compound with different compositional atomic percentage, density, and porosity. The stack enhances mechanical modulus strength and enhances oxidation and copper diffusion barrier properties. The dielectric stack has inorganic or hybrid inorganic-organic random three-dimensional covalent bonding throughout the network, which contain different regions of different chemical compositions such as a cap component adjacent to a low-k component of the same type of material but with higher porosity.
摘要翻译： 一种电介质堆叠和使用单步沉积工艺将叠层沉积到衬底的方法。 电介质堆叠包括具有不同组成原子百分比，密度和孔隙率的相同元素化合物的致密层和多孔层。 该堆叠增强机械模量强度并增强氧化和铜扩散阻挡性能。 电介质叠层在整个网络中具有无机或杂化的无机 - 有机随机三维共价键，其含有不同化学组成的不同区域，例如与相同类型材料的低k组分相邻但具有较高孔隙率的盖组分 。
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8.发明授权Self-aligned composite M-MOx/dielectric cap for Cu interconnect structures 有权用于Cu互连结构的自对准复合M-MOx /电介质盖公开(公告)号：US08299365B2
公开(公告)日：2012-10-30
申请号：US12683590
申请日：2010-01-07
IPC分类号： H05K1/09
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap.
摘要翻译： 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括具有约4.0或更小的介电常数的互连电介质材料。 互连电介质材料在其中具有填充有含Cu材料的至少一个开口。 至少一个开口内的含Cu材料具有与互连电介质材料的上表面共面的暴露的上表面。 互连结构还包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。 互连结构还包括位于复合M-MOx帽的至少上表面上的介电帽。
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9.发明申请SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME 有权具有改进的韧性和改进的Si-C键合的SiCOH电介质材料，含有它们的半导体器件及其制造方法公开(公告)号：US20090181178A1
公开(公告)日：2009-07-16
申请号：US12355316
申请日：2009-01-16
申请人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
发明人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
IPC分类号： C23C16/22
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.
摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，另一部分C原子键合为Si-R-Si，其中R为苯基， - [CH2] n-，其中n大于或等于1，HC-CH，C-CH2，CC或[ S] n连接，其中n是上面定义的。
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公开(公告)号：US20080286494A1
公开(公告)日：2008-11-20
申请号：US12044334
申请日：2008-03-07
申请人： Christos Dimitrios Dimitrakopoulos , Stephen McConnell Gates , Alfred Grill , Michael Wayne Lane , Eric Gerhard Liniger , Xiao Hu Liu , Son Van Nguyen , Deborah Ann Neumayer , Thomas McCarroll Shaw
发明人： Christos Dimitrios Dimitrakopoulos , Stephen McConnell Gates , Alfred Grill , Michael Wayne Lane , Eric Gerhard Liniger , Xiao Hu Liu , Son Van Nguyen , Deborah Ann Neumayer , Thomas McCarroll Shaw
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/02348 , H01L21/3105 , H01L21/31058 , H01L21/31633 , H01L21/76801 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76832 , Y10T428/249953 , Y10T428/249969 , Y10T428/249979
摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.
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