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1.发明授权Fluorine-containing acrylate and methacrylate side-chain liquid crystal monomers and polymers 失效含氟丙烯酸酯和甲基丙烯酸酯侧链液晶单体和聚合物
公开(公告)号：US5087672A
公开(公告)日：1992-02-11
申请号：US537912
申请日：1990-06-13
IPC分类号： C07C69/76 , C07C69/86 , C07C69/92 , C07C69/94 , C07C233/20 , C07C255/55 , C08F20/10 , C08F20/22 , C08F20/38 , C08F20/52 , C08F220/02 , C08F220/22 , C08F220/38 , C08F220/58 , C09K19/20 , C09K19/38
CPC分类号： C09K19/3852
摘要： The present invention relates to novel fluorinated acrylate and methacrylate ester monomers and homopolymers and copolymers thereof. In another aspect, it relates to a process for preparing monomers of the invention. Homopolymers and copolymers of the invention have units which correspond to the following general chemical formula: ##STR1## wherein R is hydrogen, halo, a C.sub.1 to C.sub.4 alkyl or haloalkyl group, or a C.sub.6 to C.sub.10 aryl group,W is --O-- or --NR.sup.1 --, wherein R.sup.1 is hydrogen or a C.sub.1 to C.sub.4 alkyl group,X is a carbon-to-carbon single bond or a spacer group,Y is a mesogenic group, andZ is a fluorinated alkyl group.The novel monomers and polymers can be liquid crystals.
摘要翻译： 本发明涉及新的氟化丙烯酸酯和甲基丙烯酸酯单体及其均聚物和共聚物。 另一方面，本发明涉及制备本发明单体的方法。 本发明的均聚物和共聚物具有对应于以下一般化学式的单元：其中R是氢，卤素，C 1至C 4烷基或卤代烷基或C 6至C 10芳基，W是-O-或 -NR1-，其中R1是氢或C1-C4烷基，X是碳 - 碳单键或间隔基，Y是介晶基，Z是氟化烷基。 新型单体和聚合物可以是液晶。
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公开(公告)号：US20080303187A1
公开(公告)日：2008-12-11
申请号：US11965802
申请日：2007-12-28
CPC分类号： B29C43/021 , B29C43/003 , B29C2043/025 , B29C2043/142 , B29C2043/3438 , B29C2043/5833 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24802
摘要： An imprint lithography template with an active area arranged to receive imprinting material during an imprint lithography process and a non-active area adjacent the active area is described. At least a portion of the non-active area is treated to inhibit flow of the imprinting material from the active area to the non-active area during the imprint lithography process.
摘要翻译： 具有布置成在压印光刻工艺期间接收压印材料的有源区域和与有源区域相邻的非有源区域的压印光刻模板被描述。 处理非活性区域的至少一部分以在压印光刻工艺期间抑制压印材料从有源区域流向非有源区域。
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3.发明授权Compositions for dark-field polymerization and method of using the same for imprint lithography processes 有权用于暗场聚合的组合物及其用于压印光刻工艺的方法公开(公告)号：US07365103B2
公开(公告)日：2008-04-29
申请号：US10318273
申请日：2002-12-12
IPC分类号： C08F220/18 , C08F230/08 , C08F2/48
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0045 , G03F7/0757
摘要： A composition is provided and a method of using the same to form a pattern on a substrate using imprint lithography employing dark-field polymerization is disclosed. The composition includes a polymerizable bisvinylether and an initiator that produces an acid in response to radiation.
摘要翻译： 提供了一种组合物，并且公开了使用其使用使用暗视野聚合的压印光刻在基板上形成图案的方法。 组合物包括可聚合的双乙烯基醚和引发剂，其响应于辐射而产生酸。
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4.发明授权Patterning substrates employing multi-film layers defining etch-differential interfaces 有权使用定义蚀刻差分界面的多层图案的基板公开(公告)号：US07205244B2
公开(公告)日：2007-04-17
申请号：US10946574
申请日：2004-09-21
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3086 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3121 , H01L21/3122
摘要： The present invention features a method of patterning a substrate that includes forming, on the substrate, a multi-layer film with a surface, an etch rate interface and an etch-differential interface. The etch-differential interface is defined between the etch rate interface and the surface. A recorded pattern is transferred onto the substrate defined, in part, by the etch-differential interface.
摘要翻译： 本发明的特征在于一种图案化衬底的方法，其包括在衬底上形成具有表面，蚀刻速率界面和蚀刻差分界面的多层膜。 蚀刻差分界面界定在蚀刻速率界面和表面之间。 将记录图案转移到基板上，部分地由蚀刻差分界面限定。
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5.发明授权公开(公告)号：US06369179B1
公开(公告)日：2002-04-09
申请号：US09434771
申请日：1999-11-04
IPC分类号： C08F1820
CPC分类号： G02B6/02033 , C07C69/653 , C08F20/22 , G02B1/043 , G02B1/046 , G02B1/048 , C08L33/16
摘要： 1H,lH-perfluorocyclohexylmethyl 2-fluoroacrylate, and homopolymers thereof.
摘要翻译： 1H，1H-全氟环己基甲基2-氟丙烯酸酯及其均聚物
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公开(公告)号：US08616873B2
公开(公告)日：2013-12-31
申请号：US13014354
申请日：2011-01-26
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A micro-conformal nanoimprint lithography template includes a backing layer and a nanopatterned layer adhered to the backing layer. The elastic modulus of the backing layer exceeds the elastic modulus of the nanopatterned layer. The micro-conformal nanoimprint lithography template can be used to form a patterned layer from an imprint resist on a substrate, the substrate having a micron-scale defect, such that an excluded distance from an exterior surface of the micron-scale defect to the patterned layer formed by the nanoimprint lithography template is less than a height of the defect. The nanoimprint lithography template can be used to form multiple imprints with no reduction in feature fidelity.
摘要翻译： 微型共形纳米压印光刻模板包括背衬层和粘附到背衬层的纳米图案化层。 背衬层的弹性模量超过纳米图案层的弹性模量。 微型共形纳米压印光刻模板可以用于从基底上的抗蚀刻剂形成图案化层，该衬底具有微米级缺陷，使得从微米级缺陷的外表面到图案化的排除距离 由纳米压印光刻模板形成的层小于缺陷的高度。 纳米压印光刻模板可以用于形成多个压印，而不会降低特征保真度。
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7.发明授权公开(公告)号：US07531025B2
公开(公告)日：2009-05-12
申请号：US10898034
申请日：2004-07-23
申请人： Ian M. McMackin , Nicholas A. Stacey , Daniel A. Babbs , Duane J. Voth , Mathew P. C. Watts , Van N. Truskett , Frank Y. Xu , Ronald D. Voisin , Pankaj B. Lad
发明人： Ian M. McMackin , Nicholas A. Stacey , Daniel A. Babbs , Duane J. Voth , Mathew P. C. Watts , Van N. Truskett , Frank Y. Xu , Ronald D. Voisin , Pankaj B. Lad
IPC分类号： B01D19/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S425/06 , Y10S425/815 , Y10S438/909
摘要： The present invention is directed toward a method of controlling a turbulent flow of a fluid between a substrate and a template, and more specifically, controlling a turbulent flow of a fluid between droplets disposed on a substrate and a template. To that end, the method further comprises the ingression and egression of the fluid through a first and second aperture, and in a further embodiment, a plurality of apertures, to create such a turbulent flow of the fluid.
摘要翻译： 本发明涉及一种控制衬底和模板之间的流体的紊流的方法，更具体地说，控制流体在设置在衬底和模板上的液滴之间的紊流。 为此，该方法还包括流体通过第一和第二孔的进入和流出，并且在另一实施例中，多个孔，以产生流体的这种湍流。
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8.发明申请公开(公告)号：US20080230959A1
公开(公告)日：2008-09-25
申请号：US12105704
申请日：2008-04-18
IPC分类号： B29C35/08
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0045 , G03F7/0757
摘要： The present invention provides a composition and a method of using the same to form a pattern on a substrate using imprint lithography employing dark-field polymerization. To that end, the composition includes a bis vinyl ether component, and an initiator component that produces an acid in response to radiation. The bis vinyl ether component is reactive to the acid and polymerizes in response thereto.
摘要翻译： 本发明提供了一种组合物及其使用方法，该组合物及其方法使用使用暗场聚合的压印光刻法在基材上形成图案。 为此，组合物包括双乙烯基醚组分和响应于辐射产生酸的引发剂组分。 双乙烯基醚组分与酸反应并响应于此聚合。
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9.发明申请Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features 有权用于制造包含各种蚀刻特征的印记模板的自对准过程公开(公告)号：US20070243655A1
公开(公告)日：2007-10-18
申请号：US11693236
申请日：2007-03-29
申请人： Gerard M. Schmid , Nicholas A. Stacey , Douglas J. Resnick , Ronald D. Voisin , Lawrence J. Myron
发明人： Gerard M. Schmid , Nicholas A. Stacey , Douglas J. Resnick , Ronald D. Voisin , Lawrence J. Myron
IPC分类号： H01L21/467
CPC分类号： G03F7/0005 , B82Y10/00 , B82Y40/00 , G02B3/0012 , G03F7/0002
摘要： A process that enables coplanarization of the structures that have been created in multiple independent etch steps. The various etches are performed independently by selectively exposing only certain patterns to particular etching conditions. After these structures have been created, it is possible that the various structures will exist at different planes/elevations relative to the template surface. The elevations of the various structures may be adjusted independently by selectively exposing “higher” structures to an anisotropic etch that reduces the overall elevation of the structures, while preserving the structural topography.
摘要翻译： 能够在多个独立蚀刻步骤中产生的结构共面化的工艺。 通过仅选择性地将某些图案暴露于特定的蚀刻条件来独立地执行各种蚀刻。 在这些结构已被创建之后，可能各种结构将相对于模板表面存在于不同的平面/高度处。 可以通过选择性地将“较高”结构暴露于各向异性蚀刻来独立地调节各种结构的高度，从而降低结构的整体高度，同时保留结构形貌。
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10.发明授权Method of patterning surfaces while providing greater control of recess anisotropy 失效图案化表面的方法同时提供更大的凹陷各向异性的控制公开(公告)号：US07041604B2
公开(公告)日：2006-05-09
申请号：US10946159
申请日：2004-09-21
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3081 , B29C43/003 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/02118 , H01L21/02126 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/02282 , H01L21/3086 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3121
摘要： The present invention features a method of patterning a substrate that includes forming, on the substrate, a multi-layer film defining an etch rate interface having a plurality of first portions that having a first etch rate associated therewith. The multi-layer film includes a second portion having a second etch rate associated therewith. Adjacent first portions are separated by the second portion. A pattern is transferred onto the substrate that is defined, in part, by the junction. The difference between the first and second etch rates is selected to minimize bowing of recessed features formed in the pattern.
摘要翻译： 本发明的特征在于一种图案化衬底的方法，其包括在衬底上形成限定具有与其相关联的具有第一蚀刻速率的多个第一部分的蚀刻速率界面的多层膜。 多层膜包括具有与其相关联的第二蚀刻速率的第二部分。 相邻的第一部分由第二部分分开。 图案被转移到基底上，该基底部分由接合部限定。 选择第一和第二蚀刻速率之间的差异以最小化在图案中形成的凹陷特征的弯曲。
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