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    Low temperature method for synthesizing micrograin tungsten carbide
    3.
    发明授权
    Low temperature method for synthesizing micrograin tungsten carbide 失效
    用于合成微晶碳化钨的低温方法

    公开(公告)号：US5372797A

    公开(公告)日：1994-12-13

    申请号：US50945

    申请日：1993-04-21

    申请人： Stephen D. Dunmead ,  William G. Moore

    发明人： Stephen D. Dunmead ,  William G. Moore

    IPC分类号： C01B32/949 ,  C01B31/34

    CPC分类号： B82Y30/00 ,  C01B31/34 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/80

    摘要： A method for forming monotungsten carbide, comprising heating a solid, non-elemental tungsten-containing material in a flowing atmosphere containing molecular hydrogen and molecular methane for a time sufficient to convert substantially all of the tungsten-containing material to monotungsten carbide, The heating brings the temperature of the tungsten-containing material to a first elevated temperature of from about 520 to about 550.degree. C. and, subsequently, at a rate of from about 3 to about 10.degree. C. per minute, the heating brings the temperature from the first elevated temperature to a second elevated temperature of about 800 to about 900.degree. C. Thereafter the temperature is held at the second elevated temperature for at least about 15 minutes. At least about 50 weight percent of the monotungsten carbide formed is formed while holding the temperature at the second elevated temperature.

    摘要翻译： 一种用于形成单碳化钨的方法，包括在含有分子氢和分子甲烷的流动气氛中加热固体的非元素含钨材料足以将基本上所有含钨材料转化为单碳化钨的时间。加热带来 将含钨材料的温度升至约520℃至约550℃的第一升高温度，随后以约3至约10℃/分钟的速率进行，加热使温度从 第一升高温度至约800℃至约900℃的第二升高温度。此后将温度保持在第二升高温度下至少约15分钟。 在将温度保持在第二升高温度的同时形成至少约50重量％的形成的单
    碳化钨。

    Method for forming beta-silicon carbide whiskers, singly or in a matrix, using an organotitanium coordination compound catalyst
    5.
    发明授权
    Method for forming beta-silicon carbide whiskers, singly or in a matrix, using an organotitanium coordination compound catalyst 失效
    使用有机钛配位化合物催化剂单独或以基质形成β-碳化硅晶须的方法

    公开(公告)号：US5383421A

    公开(公告)日：1995-01-24

    申请号：US64527

    申请日：1993-05-19

    申请人： Stephen D. Dunmead ,  Kevin E. Howard

    发明人： Stephen D. Dunmead ,  Kevin E. Howard

    IPC分类号： C04B35/565 ,  C04B35/584 ,  C04B35/622 ,  C04B35/80 ,  C30B25/00 ,  C30B1/10

    CPC分类号： C04B35/80 ,  C04B35/565 ,  C04B35/584 ,  C04B35/622 ,  C30B25/005 ,  C30B29/36

    摘要： Beta-silicon carbide whiskers of superior uniformity can be formed, either singly or in-situ in a matrix, by heating a source for silicon with a source of carbon (greater than 0 percent but less than or equal to about 60 percent of stoichiometric, with respect to the silicon source) in the presence of a titanium-containing catalyst, such as titanocene dichloride. Advantageously, the titanium catalyst can be applied by drying a solution of the titanium catalyst on the carbon and silicon sources. The titanium, carbon and silicon sources are then heated together, preferably to between about 1800.degree. C. and about 1850.degree. C., resulting in a product containing high quality beta-silicon carbide whiskers. The silicon source can be silicon nitride powder, which can either be substantially converted to free-flowing whiskers, or in the alternative, the silicon nitride powder, carbon source and titanium catalyst can be formed into a conventional ceramic matrix prior to conversion to beta-silicon carbide whiskers, so the whiskers formed therein will serve as a reinforcement for the ceramic matrix.

    摘要翻译： 通过用碳源（大于0％但小于或等于化学计量的约60％）加热硅源，可以在基质中单独或原位形成均匀性优异的β-碳化硅晶须， 相对于硅源）在含钛催化剂（例如二氯二茂钛）的存在下进行。 有利地，可以通过将钛催化剂的溶液干燥在碳源和硅源上来施加钛催化剂。 然后将钛，碳和硅源一起加热，优选在约1800℃至约1850℃之间，产生含有高质量β-碳化硅晶须的产品。 硅源可以是氮化硅粉末，其可以基本上转化为自由流动的晶须，或者替代地，氮化硅粉末，碳源和钛催化剂可以在转化成β- 碳化硅晶须，因此其中形成的晶须将用作陶瓷基体的增强材料。

    Cemented ceramic article made from ultrafine solid solution powders, method of making same, and the material thereof
    6.
    发明授权
    Cemented ceramic article made from ultrafine solid solution powders, method of making same, and the material thereof 失效
    由超细固溶粉末制成的水泥陶瓷制品，其制造方法及其材料

    公开(公告)号：US5580666A

    公开(公告)日：1996-12-03

    申请号：US375759

    申请日：1995-01-20

    申请人： Ellen M. Dubensky ,  Stephen D. Dunmead ,  Daniel F. Carroll

    发明人： Ellen M. Dubensky ,  Stephen D. Dunmead ,  Daniel F. Carroll

    IPC分类号： C22C29/06 ,  C22C1/05 ,  C22C29/08 ,  B22F7/06

    CPC分类号： C22C29/08 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12049 ,  Y10T428/12056 ,  Y10T428/1216

    摘要： A multi-phase cemented ceramic article, method of making same, and the material thereof is disclosed which is useful for machining and forming of metals, including ferrous metals, titanium, aluminum and other metals. The article and its material preferably includes novel microstructures including platelets, a range of grain sizes which yields superior hardness and other characteristics, and a lower tungsten concentration within the binder phase than has been seen in the prior art. The preferred composition includes ultrafine WC, an ultrafine solid solution of (Ti, Ta, W)C, and a cobalt binder. Platelets are formed in-situ, eliminating the need to add them during manufacture for improving toughness.

    摘要翻译： 公开了一种多相胶合陶瓷制品，其制造方法及其材料，其可用于包括黑色金属，钛，铝和其它金属的金属的机械加工和成型。 该物品及其材料优选包括新颖的微结构，包括血小板，一系列晶粒尺寸，其产生优异的硬度和其它特性，以及在粘结相中比在现有技术中已经看到的更低的钨浓度。 优选的组合物包括超细WC，（Ti，Ta，W）C和钴粘合剂的超细固溶体。 血小板原位形成，无需在制造过程中添加血小板来提高韧性。

    Methods for making WC-containing bodies
    9.
    发明授权
    Methods for making WC-containing bodies 失效
    制作含WC体的方法

    公开(公告)号：US5612264A

    公开(公告)日：1997-03-18

    申请号：US555944

    申请日：1995-11-13

    申请人： Robert T. Nilsson ,  Richard T. Fox ,  Stephen D. Dunmead

    发明人： Robert T. Nilsson ,  Richard T. Fox ,  Stephen D. Dunmead

    IPC分类号： C04B35/56

    CPC分类号： C04B35/6455 ,  C04B35/5607 ,  C04B35/5611 ,  C04B35/5622 ,  C04B35/5626 ,  C04B35/58007 ,  C04B35/645

    摘要： A method of forming a low level carbon high-density tungsten carbide-containing material includes sintering a preform which contains tungsten carbide powder and has a composition such that the resulting sintered material has at most 6.05 weight percent tungsten-bound carbon based on the total weight of tungsten and tungsten-bound carbon. This low level of carbon may be achieved by, prior to the sintering step, oxidizing the tungsten carbide powder sufficiently to achieve the desired substoichiometric carbon level in the sintered product or by adding a carbon-lowering material selected from the group consisting of tungsten, ditungsten carbide, and tungsten oxide. Optionally, other materials can be present in the preform such as carbon-getter metals and compounds thereof. The carbon-getter metals are those metals of which the carbides thereof are more thermodynamically stable than monotungsten carbide.

    摘要翻译： 形成低碳碳高密度碳化钨的材料的方法包括烧结含有碳化钨粉末的预成型体，并且具有使得所得烧结材料基于总重量具有至多6.05重量％的钨结合碳的组成 的钨和钨结合的碳。 这种低水平的碳可以通过在烧结步骤之前充分氧化碳化钨粉末以达到烧结产品中所需的亚化学计量碳水平，或通过添加选自钨，二钨的碳的降低材料 碳化物和氧化钨。 任选地，其它材料可以存在于预成型体中，例如碳吸收剂金属及其化合物。 碳吸收剂金属是其碳化物比单碳化钨更具有热力学稳定性的金属。