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13 条记录 (耗时 0.015 秒)

    Edge-emitting LED light source
    4.
    发明申请
    Edge-emitting LED light source 审中-公开
    边缘发光LED光源

    公开(公告)号：US20070029555A1

    公开(公告)日：2007-02-08

    申请号：US11197010

    申请日：2005-08-04

    申请人： Steven Lester ,  Virginia Robbins ,  Jeffrey Miller ,  Scott Corzine

    发明人： Steven Lester ,  Virginia Robbins ,  Jeffrey Miller ,  Scott Corzine

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0756 ,  H01L25/075 ,  H01L33/02 ,  H01L33/08 ,  H01L33/64 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Edge-emitting LED light source, and method for fabricating an edge-emitting LED light source. The edge-emitting LED light source has a plurality of edge-emitting LEDs arranged in close proximity to one another to define an array of edge-emitting LEDs. Light beams separately emitted by each of the plurality of edge-emitting LEDs in the array together form a single light beam that has a generally two-dimensional cross-sectional shape, for example, a square or other rectangular shape, and an increased overall light flux.

    摘要翻译： 边缘发光LED光源，以及制造边缘发光LED光源的方法。 边缘发射LED光源具有彼此靠近布置的多个边缘发射LED，以限定边缘发射LED的阵列。 阵列中的多个边缘发光LED中的每一个单独发射的光束一起形成具有大致二维横截面形状的单个光束，例如正方形或其它矩形形状，以及增加的整体光线 助焊剂

    Structures for reducing operating voltage in a semiconductor device
    5.
    发明申请
    Structures for reducing operating voltage in a semiconductor device 失效
    用于降低半导体器件中的工作电压的结构

    公开(公告)号：US20070034853A1

    公开(公告)日：2007-02-15

    申请号：US11203917

    申请日：2005-08-15

    申请人： Virginia Robbins ,  Steven Lester ,  Jeffrey Miller ,  David Bour

    发明人： Virginia Robbins ,  Steven Lester ,  Jeffrey Miller ,  David Bour

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01S5/305

    摘要： A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.

    摘要翻译： 发光装置包括响应于注入的电荷而被配置为产生光的有源区，以及n型材料层和p型材料层，其中n型材料层和p型材料层中的至少一种 材料层掺杂有至少两种掺杂剂，所述掺杂剂中的至少一种具有高于另一种掺杂剂的电离能级的电离能。

    Ohmic contact on p-type GaN
    6.
    发明申请
    Ohmic contact on p-type GaN 失效
    p型GaN上的欧姆接触

    公开(公告)号：US20070069380A1

    公开(公告)日：2007-03-29

    申请号：US11234993

    申请日：2005-09-26

    申请人： Jeffrey Miller ,  David Bour ,  Virginia Robbins ,  Steven Lester

    发明人： Jeffrey Miller ,  David Bour ,  Virginia Robbins ,  Steven Lester

    IPC分类号： H01L23/48

    CPC分类号： H01L21/28575 ,  H01L33/14 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.

    摘要翻译： 根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。 欧姆接触还包括提供金属接触的金属层。 不同的II-VI化合物半导体的第二层位于金属层附近。

    Laser light source adapted for LCD back-lit displays
    7.
    发明申请
    Laser light source adapted for LCD back-lit displays 有权
    适用于LCD背光显示的激光光源

    公开(公告)号：US20070030690A1

    公开(公告)日：2007-02-08

    申请号：US11198474

    申请日：2005-08-04

    申请人： Steven Lester

    发明人： Steven Lester

    IPC分类号： G02B6/04

    CPC分类号： G02F1/133615 ,  G02F1/133603 ,  G02F1/133621 ,  G02F2201/02

    摘要： A light source and a display utilizing the same are disclosed. The light source includes a laser, a light pipe, and an optical fiber. The light pipe includes a layer of transparent material having a top surface, a bottom surface, and a first edge. The first optical fiber couples light from the laser to the first edge at a first location. The light is injected into the light pipe such that the light is reflected from the top surface and the light pipe includes a plurality of scattering centers that scatter the light through the top surface. The laser can be in thermal contact with a heat sink placed at a location that is adapted for dissipating heat. The light source can include a plurality of lasers in a color display. The light from the various lasers can be mixed before it reaches the light pipe or in the light pipe.

    摘要翻译： 公开了一种光源和使用该光源的显示器。 光源包括激光器，光管和光纤。 光管包括具有顶表面，底表面和第一边缘的透明材料层。 第一光纤在第一位置将来自激光器的光耦合到第一边缘。 光被注入到光管中，使得光从顶表面反射，并且光管包括使光通过顶表面散射的多个散射中心。 激光器可以与放置在适于散热的位置处的散热器热接触。 光源可以包括彩色显示器中的多个激光器。 来自各种激光器的光可以在到达光管或光管之前混合。

    LED with Improved Injection Efficiency
    9.
    发明申请
    LED with Improved Injection Efficiency 有权
    LED提高注射效率

    公开(公告)号：US20110121357A1

    公开(公告)日：2011-05-26

    申请号：US12626474

    申请日：2009-11-25

    申请人： Steven Lester ,  Jeff Ramer ,  Jun Wu ,  Ling Zhang

    发明人： Steven Lester ,  Jeff Ramer ,  Jun Wu ,  Ling Zhang

    IPC分类号： H01L33/30 ,  H01L21/20 ,  H01L21/302

    CPC分类号： H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/0004 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

    摘要： A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

    摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括夹在p型半导体层和n型半导体层之间的有源层。 当来自p型半导体层的孔与其中的n型半导体层的电子结合时，有源层发光。 有源层包括多个子层，并且具有多个凹坑，其中多个子层的侧表面与p型半导体材料接触，使得来自p型半导体材料的孔为 通过暴露的侧表面注入到这些子层中，而不通过另一个子层。 可以通过利用n型半导体层中的位错并且使用在用于沉积半导体层的相同室中的蚀刻气氛来蚀刻有源层而不去除部分制造的器件来形成凹坑。

    LED with improved injection efficiency
    10.
    发明授权
    LED with improved injection efficiency 有权
    LED注射效率提高

    公开(公告)号：US08525221B2

    公开(公告)日：2013-09-03

    申请号：US12626474

    申请日：2009-11-25

    申请人： Steven Lester ,  Jeff Ramer ,  Jun Wu ,  Ling Zhang

    发明人： Steven Lester ,  Jeff Ramer ,  Jun Wu ,  Ling Zhang

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/0004 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32

    摘要： A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits lights when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

    摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括夹在p型半导体层和n型半导体层之间的有源层。 当p型半导体层的空穴与其中的n型半导体层的电子结合时，有源层发光。 有源层包括多个子层，并且具有多个凹坑，其中多个子层的侧表面与p型半导体材料接触，使得来自p型半导体材料的孔为 通过暴露的侧表面注入到这些子层中，而不通过另一个子层。 可以通过利用n型半导体层中的位错并且使用在用于沉积半导体层的相同室中的蚀刻气氛来蚀刻有源层而不去除部分制造的器件来形成凹坑。