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    SEMICONDUCTOR MEMORY DEVICE FOR DATA SENSING
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE FOR DATA SENSING 有权
    用于数据传感的半导体存储器件

    公开(公告)号：US20120087177A1

    公开(公告)日：2012-04-12

    申请号：US13238553

    申请日：2011-09-21

    申请人： Sua KIM ,  Chul-Woo Park ,  Hong-Sun Hwang ,  Hak-Soo Yu

    发明人： Sua KIM ,  Chul-Woo Park ,  Hong-Sun Hwang ,  Hak-Soo Yu

    IPC分类号： G11C11/24

    CPC分类号： G11C11/4091 ,  G11C11/4099

    摘要： A semiconductor memory device includes a memory cell and a first reference memory cell. The memory cell includes a first switching element and a first capacitor for storing data. The first switching element is controlled by a first wordline, and has a first terminal connected to a first terminal of the first capacitor and a second terminal connected to a first bitline. The first capacitor has a second terminal for receiving a first plate voltage. The first reference memory cell includes a first reference switching element and a first capacitor. The first switching element is controlled by a first reference wordline, and has a first terminal connected to a first terminal of the first reference capacitor and a second terminal connected to a second bitline. The first reference capacitor has a second terminal receiving a first reference plate voltage different from the first plate voltage.

    摘要翻译： 半导体存储器件包括存储单元和第一参考存储单元。 存储单元包括第一开关元件和用于存储数据的第一电容器。 第一开关元件由第一字线控制，并且具有连接到第一电容器的第一端子的第一端子和连接到第一位线的第二端子。 第一电容器具有用于接收第一板电压的第二端子。 第一参考存储单元包括第一参考开关元件和第一电容器。 第一开关元件由第一参考字线控制，并且具有连接到第一参考电容器的第一端子的第一端子和连接到第二位线的第二端子。 第一参考电容器具有接收与第一板电压不同的第一参考板电压的第二端子。

    Semiconductor memory device for data sensing
    2.
    发明授权
    Semiconductor memory device for data sensing 有权
    用于数据传感的半导体存储器件

    公开(公告)号：US08553484B2

    公开(公告)日：2013-10-08

    申请号：US13238553

    申请日：2011-09-21

    申请人： Sua Kim ,  Chul-Woo Park ,  Hong-Sun Hwang ,  Hak-Soo Yu

    发明人： Sua Kim ,  Chul-Woo Park ,  Hong-Sun Hwang ,  Hak-Soo Yu

    IPC分类号： G11C7/00

    CPC分类号： G11C11/4091 ,  G11C11/4099

    摘要： A semiconductor memory device includes a memory cell and a first reference memory cell. The memory cell includes a first switching element and a first capacitor for storing data. The first switching element is controlled by a first wordline, and has a first terminal connected to a first terminal of the first capacitor and a second terminal connected to a first bitline. The first capacitor has a second terminal for receiving a first plate voltage. The first reference memory cell includes a first reference switching element and a first capacitor. The first switching element is controlled by a first reference wordline, and has a first terminal connected to a first terminal of the first reference capacitor and a second terminal connected to a second bitline. The first reference capacitor has a second terminal receiving a first reference plate voltage different from the first plate voltage.

    摘要翻译： 半导体存储器件包括存储单元和第一参考存储单元。 存储单元包括第一开关元件和用于存储数据的第一电容器。 第一开关元件由第一字线控制，并且具有连接到第一电容器的第一端子的第一端子和连接到第一位线的第二端子。 第一电容器具有用于接收第一板电压的第二端子。 第一参考存储单元包括第一参考开关元件和第一电容器。 第一开关元件由第一参考字线控制，并且具有连接到第一参考电容器的第一端子的第一端子和连接到第二位线的第二端子。 第一参考电容器具有接收与第一板电压不同的第一参考板电压的第二端子。

    Semiconductor memory device including vertical channel transistors
    3.
    发明授权
    Semiconductor memory device including vertical channel transistors 有权
    半导体存储器件包括垂直沟道晶体管

    公开(公告)号：US08830715B2

    公开(公告)日：2014-09-09

    申请号：US13304851

    申请日：2011-11-28

    申请人： Hak-Soo Yu ,  Su-A Kim ,  Hong-Sun Hwang ,  Chul-Woo Park

    发明人： Hak-Soo Yu ,  Su-A Kim ,  Hong-Sun Hwang ,  Chul-Woo Park

    IPC分类号： G11C5/02 ,  G11C11/34 ,  H01L27/108 ,  G11C7/02 ,  G11C7/06

    CPC分类号： G11C7/02 ,  G11C7/062 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/10897

    摘要： A semiconductor memory device is disclosed. The semiconductor memory device includes a memory array block, a first word line and a second word line. The memory array block includes a plurality of adjacent columns of memory cells, each column of memory cells including a plurality of consecutive memory cells having a plurality of respective consecutive cell transistors that comprise at least a first group of cell transistors and a second group of cell transistors. The first word line is disposed above the plurality of respective consecutive cell transistors and electrically connected to the first group of cell transistors, and the second word line is disposed below the plurality of respective consecutive cell transistors and electrically connected to the second group of cell transistors.

    摘要翻译： 公开了一种半导体存储器件。 半导体存储器件包括存储器阵列块，第一字线和第二字线。 存储器阵列块包括多个相邻列的存储器单元，每列存储器单元包括多个连续的存储单元，其具有多个相应的连续单元晶体管，其包括至少第一组单元晶体管和第二组单元 晶体管。 第一字线设置在多个相应的连续单元晶体管的上方并电连接到第一组单元晶体管，第二字线设置在多个相应的连续单元晶体管的下方，并电连接到第二组单元晶体管 。

    Bad page management in memory device or system
    4.
    发明授权
    Bad page management in memory device or system 有权
    内存设备或系统中的页面错误管理

    公开(公告)号：US08769356B2

    公开(公告)日：2014-07-01

    申请号：US13570568

    申请日：2012-08-09

    申请人： Hak-Soo Yu ,  Chul-Woo Park ,  Uk-Song Kang ,  Joo-Sun Choi ,  Hong-Sun Hwang ,  Jong-Pil Son

    发明人： Hak-Soo Yu ,  Chul-Woo Park ,  Uk-Song Kang ,  Joo-Sun Choi ,  Hong-Sun Hwang ,  Jong-Pil Son

    IPC分类号： G11C29/00 ,  G11C29/24

    CPC分类号： G11C29/24 ,  G11C29/00 ,  G11C29/76 ,  G11C29/785 ,  G11C2029/4402

    摘要： A memory device comprises a memory cell array and a bad page map. The memory cell array comprises a plurality of memory cells arranged in pages and columns, wherein the memory cell array is divided into a first memory block and a second memory block each corresponding to an array of the memory cells. The bad page map stores bad page location information indicating whether each of the pages of the first memory block is good or bad. A fail page address of the first memory block is replaced by a pass page address of the second memory block according to the bad page location information.

    摘要翻译： 存储器件包括存储单元阵列和坏页映射。 存储单元阵列包括以页和列排列的多个存储单元，其中存储单元阵列被划分为与存储单元阵列对应的第一存储块和第二存储块。 坏页面映射存储指示第一存储器块的每个页面是好是坏的页面位置信息。 根据坏页位置信息，第一存储块的失败页地址被第二存储块的通过页地址替换。

    MEMORY CORE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
    5.
    发明申请
    MEMORY CORE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME 有权
    存储核心和半导体存储器件，包括它们

    公开(公告)号：US20120212989A1

    公开(公告)日：2012-08-23

    申请号：US13304851

    申请日：2011-11-28

    申请人： Hak-Soo YU ,  Su-A Kim ,  Hong-Sun Hwang ,  Chul-Woo Park

    发明人： Hak-Soo YU ,  Su-A Kim ,  Hong-Sun Hwang ,  Chul-Woo Park

    IPC分类号： G11C5/02

    CPC分类号： G11C7/02 ,  G11C7/062 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/10897

    摘要： A semiconductor memory device is disclosed. The semiconductor memory device includes a memory array block, a first word line and a second word line. The memory array block includes a plurality of adjacent columns of memory cells, each column of memory cells including a plurality of consecutive memory cells having a plurality of respective consecutive cell transistors that comprise at least a first group of cell transistors and a second group of cell transistors. The first word line is disposed above the plurality of respective consecutive cell transistors and electrically connected to the first group of cell transistors, and the second word line is disposed below the plurality of respective consecutive cell transistors and electrically connected to the second group of cell transistors.

    摘要翻译： 公开了一种半导体存储器件。 半导体存储器件包括存储器阵列块，第一字线和第二字线。 存储器阵列块包括多个相邻列的存储器单元，每列存储器单元包括多个连续的存储单元，其具有多个相应的连续单元晶体管，其包括至少第一组单元晶体管和第二组单元 晶体管。 第一字线设置在多个相应的连续单元晶体管的上方并电连接到第一组单元晶体管，第二字线设置在多个相应的连续单元晶体管的下方，并电连接到第二组单元晶体管 。

    MEMORY MODULES AND MEMORY SYSTEMS
    8.
    发明申请
    MEMORY MODULES AND MEMORY SYSTEMS 有权
    存储器模块和存储器系统

    公开(公告)号：US20140189215A1

    公开(公告)日：2014-07-03

    申请号：US14083033

    申请日：2013-11-18

    申请人： UK-SONG KANG ,  Chul-Woo Park ,  Hak-Soo Yu ,  Jong-Pil Son

    发明人： UK-SONG KANG ,  Chul-Woo Park ,  Hak-Soo Yu ,  Jong-Pil Son

    IPC分类号： G11C11/406 ,  G06F12/02

    CPC分类号： G11C11/40607 ,  G11C11/40603 ,  G11C11/40622 ,  G11C11/4087

    摘要： A memory module includes a plurality of memory devices and a buffer chip. The buffer chip manages the memory devices. The buffer chip includes a refresh control circuit that groups a plurality of memory cell rows of the memory devices into a plurality of groups according to a data retention time of tire memory cell rows. The buffer chip selectively refreshes each of the plurality of groups in each of a plurality of refresh time regions that are periodically repeated and applies respective refresh periods to the plurality of groups, respectively.

    摘要翻译： 存储器模块包括多个存储器件和缓冲器芯片。 缓冲芯片管理存储器件。 缓冲芯片包括根据轮胎存储单元行的数据保持时间将存储器件的多个存储单元行分组成多个组的刷新控制电路。 缓冲器芯片有选择地刷新周期性地重复的多个刷新时间区域中的每一个中的多个组中的每一个，并将各个刷新周期分别应用于多个组。

    Method of refreshing a memory device, refresh address generator and memory device
    10.
    发明授权
    Method of refreshing a memory device, refresh address generator and memory device 有权
    刷新存储器件，刷新地址发生器和存储器件的方法

    公开(公告)号：US08873324B2

    公开(公告)日：2014-10-28

    申请号：US13240049

    申请日：2011-09-22

    申请人： Chul-Woo Park ,  Joo-Sun Choi ,  Hong-Sun Hwang

    发明人： Chul-Woo Park ,  Joo-Sun Choi ,  Hong-Sun Hwang

    IPC分类号： G11C7/00

    CPC分类号： G11C11/40618 ,  G11C11/40622 ,  G11C11/408

    摘要： A refresh address is generated with a refresh period for refreshing a memory device with refresh leveraging. A respective refresh is performed on a weak cell having a first address when the refresh address is a second address instead of on a first strong cell having the second address. A respective refresh is performed on one of the first strong cell or a second strong cell having a third address when the refresh address is the third address. Address information is stored for only one of the first, second, and third addresses such that memory capacity may be reduced. In alternative aspects, a respective refresh is performed on one of a weak cell, a first strong cell, or a second strong cell depending on a flag when the refresh address is any of at least one predetermined address to result in refresh leveraging.

    摘要翻译： 生成具有刷新周期的刷新地址，以刷新刷新的存储器件。 当刷新地址是第二地址而不是具有第二地址的第一强单元时，对具有第一地址的弱小区执行相应的刷新。 当刷新地址是第三地址时，在具有第三地址的第一强单元或第二强单元之一上执行相应的刷新。 仅对第一，第二和第三地址中的一个存储地址信息，从而可以减少存储容量。 在替代方面，当刷新地址是至少一个预定地址中的任一个以导致刷新利用时，依赖于标志，在弱小区，第一强小区或第二强小区中的一个上执行相应的刷新。