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    Light emitting device and method of manufacturing the same
    2.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US08049239B2

    公开(公告)日：2011-11-01

    申请号：US12622271

    申请日：2009-11-19

    申请人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

    发明人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L2933/0083

    摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

    摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

    Light emitting device and method of manufacturing the same
    5.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US08164107B2

    公开(公告)日：2012-04-24

    申请号：US12628950

    申请日：2009-12-01

    申请人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Gyeong Geun Park

    发明人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Gyeong Geun Park

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L2933/0083

    摘要： The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.

    摘要翻译： 发光器件和相应的制造方法，所述发光器件包括第二电极层; 形成在所述第二电极层上的第二导电类型半导体层; 形成在所述第二导电类型半导体层上的有源层; 形成有第一光子晶体的第一导电型半导体层，其包括形成在所述有源层上的掩模层和气隙; 以及形成在所述第一导电类型半导体层上的第一电极层。

    Light emitting device
    6.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08592848B2

    公开(公告)日：2013-11-26

    申请号：US13423747

    申请日：2012-03-19

    申请人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Gyeong Geun Park

    发明人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Gyeong Geun Park

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L2933/0083

    摘要： The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.

    摘要翻译： 发光器件和相应的制造方法，所述发光器件包括第二电极层; 形成在所述第二电极层上的第二导电类型半导体层; 形成在所述第二导电类型半导体层上的有源层; 形成有第一光子晶体的第一导电型半导体层，其包括形成在所述有源层上的掩模层和气隙; 以及形成在所述第一导电类型半导体层上的第一电极层。

    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20100127295A1

    公开(公告)日：2010-05-27

    申请号：US12622271

    申请日：2009-11-19

    申请人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

    发明人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L2933/0083

    摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

    摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。