公开(公告)号：US5900056A

公开(公告)日：1999-05-04

申请号：US769242

申请日：1996-12-18

申请人： Sung-Woo Choi ,  Jong-Hyeob Baek ,  Bun Lee

发明人： Sung-Woo Choi ,  Jong-Hyeob Baek ,  Bun Lee

IPC分类号： H01L21/20 ,  C30B25/10 ,  C30B25/14

CPC分类号： C30B25/105 ,  C30B29/40

摘要： The present invention relates to a method for growing new binary, ternary and quaternary epitaxial layers of III-V compound semiconductors which have the characteristics of low temperature growth, good stability and high-purity, using remote plasma, comprising the steps of converting H.sub.2 and He mixed gas into a plasma state; heating a high-purity of solid source to generate a vaporized source; reacting the vaporized source with H.sub.2 under the H.sub.2 and He plasma environment to produce V-hydrides in situ; introducing the V-hydrides directly into group III source without passing through the plasma; and reacting V-hydrides with group III source on a substrate to form an epitaxial thin layer of III-V compound semiconductors. According to the present invention, high-purity of epitaxial thin layer can be formed at a low temperature, an economical process that does not require an ultrahigh vacuum, a stabilized process that does not need to handle poisonous gas for the reaction with gropu V, and a simple process for manufacturing the various binary, ternary and quaternary compound semiconductor alloys can be provided. Thus, the method of the present invention can be applied to the future information and communication industry, for example, high speed, high frequency optical communication system with (Ga, In, Al)--(As, P, Sb) based on III-V compound semiconductor electronic and optical devices, and the circuitry thereof including heterojunction bipolar transistors, high electron mobility transistors, semiconductor lasers and optical switches.

摘要翻译： 本发明涉及一种利用远程等离子体生长具有低温生长特性，稳定性好，高纯度等特点的III-V族化合物半导体二元，三元和四元外延层的方法，包括以下步骤：将H 2和 他将气体混合成等离子体状态; 加热高纯度固体源以产生蒸发源; 在H 2和He等离子体环境下使蒸发源与H 2反应，原位产生V-氢化物; 将V型氢化物直接引入III族源而不通过等离子体; 并将V型氢化物与III族源反应在衬底上以形成III-V族化合物半导体的外延薄层。 根据本发明，可以在低温下形成高纯度的外延薄层，不需要超高真空的经济工艺，不需要处理有毒气体用于与gropu V反应的稳定过程， 并且可以提供制造各种二元，三元和四元化合物半导体合金的简单方法。 因此，本发明的方法可以应用于将来信息通信行业，例如具有（Ga，In，Al） - （As，P，Sb）的高速，高频光通信系统， V化合物半导体电子和光学器件，其电路包括异质结双极晶体管，高电子迁移率晶体管，半导体激光器和光开关。

公开(公告)号：US5705403A

公开(公告)日：1998-01-06

申请号：US696092

申请日：1996-08-13

申请人： Jong-Hyeob Baek ,  Bun Lee ,  Jin-Hong Lee ,  Sung-Woo Choi

发明人： Jong-Hyeob Baek ,  Bun Lee ,  Jin-Hong Lee ,  Sung-Woo Choi

IPC分类号： G01N21/17 ,  G01N21/31 ,  H01L21/205 ,  H01L21/66 ,  H01L33/30 ,  H01L21/00

CPC分类号： H01L21/02579 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262

摘要： A method of sensing the concentration of a doped impurity on a semiconductor in real time and a method of sensing the change of its growth rate dependent on time among the changes of the growing conditions due to doping by using a real time analysis apparatus in growing a heterostructured semiconductor by a MOCVD method. A reflecting signal during the growth by means of a real time analysis apparatus has a periodic property, an amplitude change of a reflecting signal is dependent on an absorption coefficient when an absorption exists on an epitaxial layer, an impurity concentration can be obtained by using the relation of an absorption coefficient and an impurity concentration. In addition, if each peak is independently analyzed, the respective growth rate dependent on time are measured individually, so that the reduced growth rate dependent on time of the growth rate is sensed in a carbon doped AlAs layer.

摘要翻译： 一种实时检测半导体掺杂杂质的浓度的方法，以及在生长中使用实时分析装置时由于掺杂而引起的生长条件变化之间的随时间的变化而检测其生长速度变化的方法 通过MOCVD方法的异质结构半导体。 通过实时分析装置生长期间的反射信号具有周期性质，当在外延层上存在吸收时，反射信号的振幅变化取决于吸收系数，可以通过使用 吸收系数与杂质浓度的关系。 另外，如果独立地分析每个峰，则分别测量相应于时间的生长速率，从而在碳掺杂的AlAs层中感测到依赖于生长速率的时间的降低的生长速率。

公开(公告)号：US5883911A

公开(公告)日：1999-03-16

申请号：US742160

申请日：1996-11-01

申请人： Bun Lee ,  Jong-Hyeob Baek ,  Sung-Woo Choi ,  Jin-Hong Lee

发明人： Bun Lee ,  Jong-Hyeob Baek ,  Sung-Woo Choi ,  Jin-Hong Lee

IPC分类号： H01S3/00 ,  H01S5/183 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/183 ,  H01S2301/173 ,  H01S5/1053 ,  H01S5/18319 ,  H01S5/3205 ,  H01S5/3215 ,  H01S5/3406 ,  H01S5/34313

摘要： An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an In.sub.x Ga.sub.1-x As thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the In.sub.x Ga.sub.1-x As grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the In.sub.x Ga.sub.1-x As thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same.

摘要翻译： 由于使用具有期望晶格率的薄膜材料生长的电位使用非常小部分的活化层，并且由此产生连续振荡，因此改进的表面发射激光器件可以容易地改变发光波长 通过使用具有高反射率的反射器在室温下进行。 因此，增加了包括GaAs衬底的光学特性; 在GaAs衬底上由反射率为1的多层AlAs / GaAs异质薄膜形成下反射体; 在下反射器上由下反射器形成的齿形分级层和在组成分级方法中具有大晶格率的In x Ga 1-x As薄膜; 在In x Ga 1-x As分级层上形成一个齿形的InGaAs分级阱，作为In组成减少而不是分级层; 在In x Ga 1-x As薄膜上形成缓冲层，由晶格键合的InP形成; 并且在缓冲层上的反射率为1的InAlAs / InAlGaAs异质薄膜的多层上形成上半导体反射器，其中从其表面发射激光束。

公开(公告)号：US5748319A

公开(公告)日：1998-05-05

申请号：US671842

申请日：1996-06-28

申请人： Jong-Hyeob Baek ,  Bun Lee ,  Sung-Woo Choi ,  Jin-Hong Lee

发明人： Jong-Hyeob Baek ,  Bun Lee ,  Sung-Woo Choi ,  Jin-Hong Lee

IPC分类号： H01L21/302 ,  G01B11/06 ,  H01L21/3065

CPC分类号： G01B11/0683

摘要： A method for sensing the completion of removal of an oxide layer from a semiconductor substrate or a super conductor by a thermal etching in real time. In the method, the time of removal of the oxide layer on the semiconductor substrate or the super conductor can ben accurately sensed. According to the method, when an oxide layer which is different from the semiconductor substrate in the refractive index is being thermally etched at a high temperature, the reflected signals of the laser beams forms a periodicity, and this periodicity is utilized so as to determine the etching rate and the time of the completion of the etching.

摘要翻译： 一种用于通过热蚀刻实时地感测从半导体衬底或超导体去除氧化物层的完成的方法。 在该方法中，可以准确地感测去除半导体衬底或超导体上的氧化物层的时间。 根据该方法，当在高温下热蚀刻与折射率不同的半导体衬底的氧化物层时，激光束的反射信号形成周期性，并且利用该周期性来确定 蚀刻速率和蚀刻完成的时间。

公开(公告)号：US5456206A

公开(公告)日：1995-10-10

申请号：US350451

申请日：1994-12-07

申请人： Bun Lee ,  Mee-Young Yoon ,  Jong-Hyeob Baek

发明人： Bun Lee ,  Mee-Young Yoon ,  Jong-Hyeob Baek

IPC分类号： H01L21/20

CPC分类号： H01L21/02502 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262

摘要： A method for growing a thin InGaAs or InAlAs layer with heavy lattice mismatching on a GaAs substrate by a MOCVD process is described. A first material gas is injected by a MOCVD process to grow a buffer layer on a GaAs substrate to a prescribed thickness. After stopping the injection of the first material gas for a few seconds, a second material gas containing a column III element is injected at a prescribed temperature. A third material gas containing a column V element is injected to grow, on the buffer layer, a thin metallic layer of a binary compound containing the column III element of a high concentration to a thickness of 2 nm or less. After a prescribed time from the injection of the third material gas, In and Ga gases or In and Al gases, mixed in the prescribed proportion are injected in an atmosphere of said third material gas to grow a thin InGaAs or InAlAs layer on the thin metallic layer.

摘要翻译： 描述了通过MOCVD工艺在GaAs衬底上生长具有重晶格失配的薄InGaAs或InAlAs层的方法。 通过MOCVD法注入第一材料气体，以在GaAs衬底上生长规定厚度的缓冲层。 在停止喷射第一原料气体几秒钟后，在规定温度下注入含有III族元素的第二原料气体。 注入含有V族元素的第三材料气体，在缓冲层上生长含有高浓度的III族元素的二元化合物的薄金属层，厚度为2nm以下。 在注入第三原料气体的规定时间后，在所述第三原料气体的气氛中注入以规定比例混合的In和Ga气体或In和Al气体，以在薄金属上生长薄的InGaAs或InAlAs层 层。

公开(公告)号：US06410347B1

公开(公告)日：2002-06-25

申请号：US09395032

申请日：1999-09-13

申请人： Jong Hyeob Baek ,  Bun Lee

发明人： Jong Hyeob Baek ,  Bun Lee

IPC分类号： H01L2120

CPC分类号： C30B25/16 ,  H01S5/0042 ,  H01S5/18361

摘要： The method of manufacturing VCSEL composed of multiple material layers uses a main measuring laser having same wavelength of that of VCSEL so as to estimate the growth periods required for growing a predetermined thickness of the material layers by analyzing the reflected signal of the main measuring laser and then control the growth time durations of subsequent material layers. This method eliminates the need of pre-knowledge of refractive indexes and the growing speeds of the material layers. Also, an interruptive process for measuring thickness, growth speed or refractive indexes can be omitted so as to perform the entire epitaxial growth in-situ and thus improve the reproducibility and the uniformity. In addition, a subsidiary measuring laser may be used other than the main measuring laser for improving the accuracy of the control of growth time duration, where the subsidiary measuring laser has a different wavelength from that of VCSEL. The subsidiary measuring laser may be used especially in the case of fabricating the VCSEL without any buffer layer.

摘要翻译： 制造由多个材料层构成的VCSEL的方法使用具有与VCSEL相同波长的主测量激光器，以便通过分析主测量激光器的反射信号来估计生长预定厚度的材料层所需的生长周期，以及 然后控制后续材料层的生长时间。 该方法消除了对折射率的预先知识和材料层的生长速度的需要。 此外，可以省略用于测量厚度，生长速度或折射率的中断过程，以便原位执行整个外延生长，从而提高再现性和均匀性。 此外，除了主测量激光器之外，可以使用辅助测量激光器来提高生长时间的控制精度，其中辅助测量激光器具有与VCSEL不同的波长。 辅助测量激光器可以特别用于制造没有任何缓冲层的VCSEL的情况。

公开(公告)号：US06181843B2

公开(公告)日：2001-01-30

申请号：US09145512

申请日：1998-09-02

申请人： Bun Lee ,  Jong Hyeob Baek

发明人： Bun Lee ,  Jong Hyeob Baek

IPC分类号： G02B626

CPC分类号： H01S5/50 ,  H01S5/423

摘要： The present invention is related to a surface transmission-type optical switch of the 1-D array method, and more particularly to a surface transmission-type optical switch, which is manufactured by Fabry-perot type not to need optical waveguides and integrated only by amplifiers of the space division multiplex. A surface transmission-type optical switch according to the present invention is a structure to overlap 3 optical amplifiers for optical switching, and an incoming signal beam is amplified through the first optical amplifier and becomes an n×n amplifiers of a matrix type with the second signal amplification, passing through the second optical amplifier overlapped on the first amplifier. Amplified signal beams through 2 amplifiers perform n×n matrix switching through the third amplifier, and go out to the opposite side of the incoming surface. Characteristics of a surface-type Fabry perot type structure is that selective amplification is possible, by selecting only one wavelength in multiple wavelengths as the gain bandwidth is 5 nm or less.

摘要翻译： 本发明涉及1-D阵列方法的表面透射型光开关，更具体地涉及一种由法布里 - 珀罗型制造的不需要光波导并仅由 放大器的空分复用。 根据本发明的表面透射型光开关是重叠3个用于光开关的光放大器的结构，并且输入信号光束通过第一光放大器被放大，并且成为具有第二信号放大的矩阵型的n×n放大器 ，通过重叠在第一放大器上的第二光放大器。 通过2个放大器的放大信号光束通过第三放大器执行nxn矩阵切换，并且进出到入射面的相对侧。 表面型法布里珀罗型结构的特征在于，通过选择只有一个波长的多个波长的增益带宽为5nm以下，可以进行选择性放大。

公开(公告)号：US5856206A

公开(公告)日：1999-01-05

申请号：US842871

申请日：1997-04-17

申请人： Jong-Hyeob Baek ,  Bun Lee

发明人： Jong-Hyeob Baek ,  Bun Lee

IPC分类号： G02B5/08 ,  C23C14/54 ,  C23C16/52 ,  C30B29/40 ,  H01L21/205 ,  H01S5/00 ,  H01S5/028 ,  H01S5/183 ,  H01S5/187 ,  C23C14/00

CPC分类号： C23C16/52 ,  H01S5/0042 ,  H01S5/18361

摘要： A Bragg reflector with a uniform thickness is fabricated by means of an in-situ laser reflectometer. In order to fabricate the Bragg reflector, a plurality of buffer layers are formed on a semiconductor substrate. Then, first and second epitaxial layers are alternatively grown on the buffer layers. While growing the epitaxial layers, the thickness of the first and second epitaxial layers are continuously measured by using a laser beam having the same wavelength as a reflective wavelength of the Bragg reflector. In this way, the thickness of the Bragg reflector is precisely controlled according to the measurements, so that the Bragg reflector may be fabricated uniformly with a predetermined thickness.

摘要翻译： 具有均匀厚度的布拉格反射器通过原位激光反射计制造。 为了制造布拉格反射器，在半导体衬底上形成多个缓冲层。 然后，在缓冲层上交替生长第一和第二外延层。 在生长外延层的同时，通过使用具有与布拉格反射器的反射波长相同的波长的激光束来连续测量第一和第二外延层的厚度。 以这种方式，根据测量精确地控制布拉格反射器的厚度，使得可以以预定厚度均匀地制造布拉格反射器。

公开(公告)号：US5472505A

公开(公告)日：1995-12-05

申请号：US359198

申请日：1994-12-19

申请人： Bun Lee ,  Dug-Bong Kim ,  Jong-Hyeob Baek

发明人： Bun Lee ,  Dug-Bong Kim ,  Jong-Hyeob Baek

IPC分类号： C23C16/52 ,  C30B25/02 ,  C23C14/00

CPC分类号： C30B25/02 ,  C23C16/52 ,  Y10T117/10 ,  Y10T117/1004

摘要： An apparatus for monitoring a film growth is disclosed, in which, when a crystalline thin film is grown by applying an MOCVD (metalorganic chemical vapor deposition method), the variation of the thickness and composition due to certain factors can be detected with real time during the film growing process, and an in-situ adjustment is possible. As the optical detector for detecting two sets of reflected beams which are reflected from the film, a silicon detector and a germanium detector are used, the former being suitable for detecting short wavelength laser beams, and the latter being suitable for detecting long wavelength laser beams. Thus two different wavelengths are detected with real time, thereby measuring the thickness and composition of the film.

摘要翻译： 公开了一种用于监测膜生长的装置，其中当通过施加MOCVD（金属有机化学气相沉积法）生长结晶薄膜时，可以实时检测由于某些因素导致的厚度和组成的变化 成膜过程和原位调整是可能的。 作为用于检测从膜反射的两组反射光束的光检测器，使用硅检测器和锗检测器，前者适用于检测短波长激光束，后者适用于检测长波长激光束 。 因此，实时检测两个不同的波长，从而测量膜的厚度和组成。

公开(公告)号：US5686350A

公开(公告)日：1997-11-11

申请号：US350022

申请日：1994-11-29

申请人： Bun Lee ,  Mee-Young Yoon ,  Jong-Hyeob Baek

发明人： Bun Lee ,  Mee-Young Yoon ,  Jong-Hyeob Baek

IPC分类号： C30B29/42 ,  H01L21/20 ,  H01L21/205 ,  H01L21/316 ,  H01L27/12

CPC分类号： H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/02664 ,  H01L21/31666 ,  Y10S438/902 ,  Y10S438/907 ,  Y10S438/967

摘要： A method for fabricating a defect-free compound semiconductor thin film on a dielectric thin film which oxidizes multi-semiconductor layers consisting of a hetero compound semiconductor thin film made of one of GaAs, InGaAs or InAs over a thin film containing a carbon impurity of a high concentration and made of AlGaAs series by an annealing at a vapor ambient, thereby rapidly growing a hetero-semiconductor thin film over a dielectric thin film made of Al.sub.2 O.sub.3 with no defect.

摘要翻译： 一种用于在电介质薄膜上制造无缺陷的化合物半导体薄膜的方法，该方法在由包含由GaAs，InGaAs或InAs中的一种构成的杂化化合物半导体薄膜上氧化多个半导体层，该半导体薄膜含有 高浓度并且由AlGaAs系列制成，通过在蒸汽环境下进行退火，从而在由Al 2 O 3制成的无电介质薄膜上快速生长异质半导体薄膜。