High temperature alloys, and articles made and repaired therewith
    3.
    发明授权
    High temperature alloys, and articles made and repaired therewith 有权
    高温合金,以及制造和维修的物品

    公开(公告)号:US07494619B2

    公开(公告)日:2009-02-24

    申请号:US10747712

    申请日:2003-12-23

    IPC分类号: C22C5/04

    摘要: An alloy, an article comprising the alloy, and methods for manufacturing and repairing an article that employ the alloy are presented. The alloy comprises, in atom percent, at least about 50% rhodium, up to about 49% of a first material, from about 1% to about 15% of a second material, and up to about 10% of a third material. The first material comprises at least one of palladium, platinum, iridium, and combinations thereof. The second material comprises at least one of tungsten, rhenium, and combinations thereof. The third material comprises at least one of ruthenium, chromium, and combinations thereof. The alloy comprises an A1-structured phase at temperatures greater than about 1000° C., in an amount of at least about 90% by volume.

    摘要翻译: 本发明提供了一种合金,包括合金的制品以及制造和修理采用该合金的制品的方法。 该合金以原子百分比包括至少约50%的铑,至多约49%的第一材料,约1%至约15%的第二种材料,以及至多约10%的第三种材料。 第一种材料包括钯,铂,铱及其组合中的至少一种。 第二材料包括钨,铼及其组合中的至少一种。 第三种材料包括钌,铬及其组合中的至少一种。 该合金包括在大于约1000℃的温度下的至少约90体积%的量的A1结构相。

    Methods and devices for evaluating the thermal exposure of a metal article
    5.
    发明申请
    Methods and devices for evaluating the thermal exposure of a metal article 失效
    用于评估金属制品的热暴露的方法和装置

    公开(公告)号:US20060256833A1

    公开(公告)日:2006-11-16

    申请号:US11126793

    申请日:2005-05-10

    IPC分类号: G01N17/00 G01K3/00

    CPC分类号: G01N17/00 G01K7/02

    摘要: A method for evaluating the thermal exposure of a selected metal component which has been exposed to changing temperature conditions is described. The voltage distribution on a surface of the metal component, or on a metallic layer which lies over the component, is first obtained. The voltage distribution usually results from a compositional change in the metal component. The voltage distribution is then compared to a thermal exposure-voltage model which expresses voltage distribution as a function of exposure time and exposure temperature for a reference standard corresponding to the metal component. In this manner, the thermal exposure of the selected component can be obtained. A related device for evaluating the thermal exposure of a selected metal component is also described.

    摘要翻译: 描述了已经暴露于变化的温度条件下的所选金属组分的热暴露评估方法。 首先获得金属部件的表面上或位于部件上的金属层上的电压分布。 电压分布通常由金属组分的组成变化引起。 然后将电压分布与表示与对应于金属组分的参考标准的曝光时间和曝光温度的函数的电压分布的热暴露电压模型进行比较。 以这种方式,可以获得所选择的部件的热曝光。 还描述了用于评估所选金属组分的热暴露的相关装置。

    Method for repairing high temperature articles
    6.
    发明授权
    Method for repairing high temperature articles 有权
    修复高温物品的方法

    公开(公告)号:US07722729B2

    公开(公告)日:2010-05-25

    申请号:US12260106

    申请日:2008-10-29

    摘要: A method for repairing an article comprises providing an article, providing a repair material, and joining said repair material to said article. The repair material comprises, in atom percent, at least about 50% rhodium; up to about 49% of a first material, said first material comprising at least one of palladium, platinum, iridium, and combinations thereof; from about 1% to about 15% of a second material, said second material comprising at least one of tungsten, rhenium, and combinations thereof; and up to about 10% of a third material, said third material comprising at least one of ruthenium, chromium, and combinations thereof. The repair material comprises an A1-structured phase at temperatures greater than about 1000° C., in an amount of at least about 90% by volume.

    摘要翻译: 一种用于修补物品的方法包括提供制品,提供修补材料,以及将所述修复材料连接到所述制品上。 修复材料以原子百分数包含至少约50%的铑; 最多约49%的第一材料,所述第一材料包含钯,铂,铱及其组合中的至少一种; 约1%至约15%的第二材料,所述第二材料包含钨,铼及其组合中的至少一种; 和最多约10%的第三材料,所述第三材料包含钌,铬及其组合中的至少一种。 修复材料包括在大于约1000℃的温度下的至少约90体积%的A1结构相。

    Methods and devices for evaluating the thermal exposure of a metal article
    7.
    发明授权
    Methods and devices for evaluating the thermal exposure of a metal article 失效
    用于评估金属制品的热暴露的方法和装置

    公开(公告)号:US07654734B2

    公开(公告)日:2010-02-02

    申请号:US11126793

    申请日:2005-05-10

    IPC分类号: G01N25/72 G01N17/00 G01K3/00

    CPC分类号: G01N17/00 G01K7/02

    摘要: A method for evaluating the thermal exposure of a selected metal component which has been exposed to changing temperature conditions is described. The voltage distribution on a surface of the metal component, or on a metallic layer which lies over the component, is first obtained. The voltage distribution usually results from a compositional change in the metal component. The voltage distribution is then compared to a thermal exposure-voltage model which expresses voltage distribution as a function of exposure time and exposure temperature for a reference standard corresponding to the metal component. In this manner, the thermal exposure of the selected component can be obtained. A related device for evaluating the thermal exposure of a selected metal component is also described.

    摘要翻译: 描述了已经暴露于变化的温度条件下的所选金属组分的热暴露评估方法。 首先获得金属部件的表面上或位于部件上的金属层上的电压分布。 电压分布通常由金属组分的组成变化引起。 然后将电压分布与表示与对应于金属组分的参考标准的曝光时间和曝光温度的函数的电压分布的热暴露电压模型进行比较。 以这种方式,可以获得所选择的部件的热曝光。 还描述了用于评估所选金属组分的热暴露的相关装置。

    METHOD FOR REPAIRING HIGH TEMPERATURE ARTICLES
    8.
    发明申请
    METHOD FOR REPAIRING HIGH TEMPERATURE ARTICLES 有权
    修复高温文章的方法

    公开(公告)号:US20090053424A1

    公开(公告)日:2009-02-26

    申请号:US12260106

    申请日:2008-10-29

    IPC分类号: C23C4/08 B23K31/02

    摘要: A method for repairing an article comprises providing an article, providing a repair material, and joining said repair material to said article. The repair material comprises, in atom percent, at least about 50% rhodium; up to about 49% of a first material, said first material comprising at least one of palladium, platinum, iridium, and combinations thereof; from about 1% to about 15% of a second material, said second material comprising at least one of tungsten, rhenium, and combinations thereof; and up to about 10% of a third material, said third material comprising at least one of ruthenium, chromium, and combinations thereof. The repair material comprises an A1-structured phase at temperatures greater than about 1000° C., in an amount of at least about 90% by volume.

    摘要翻译: 一种用于修补物品的方法包括提供制品,提供修补材料,以及将所述修复材料连接到所述制品上。 修复材料以原子百分数包含至少约50%的铑; 最多约49%的第一材料,所述第一材料包含钯,铂,铱及其组合中的至少一种; 约1%至约15%的第二材料,所述第二材料包含钨,铼及其组合中的至少一种; 和最多约10%的第三材料,所述第三材料包含钌,铬及其组合中的至少一种。 修复材料包括在大于约1000℃的温度下的至少约90体积%的A1结构相。

    Scalable room temperature quantum information processor
    9.
    发明授权
    Scalable room temperature quantum information processor 有权
    可扩展室温量子信息处理器

    公开(公告)号:US09317473B2

    公开(公告)日:2016-04-19

    申请号:US13991159

    申请日:2011-12-14

    摘要: A quantum information processor (QIP) may include a plurality of quantum registers, each quantum register containing at least one nuclear spin and at least one localized electronic spin. At least some of the quantum registers may be coherently coupled to each other by a dark spin chain that includes a series of optically unaddressable spins. Each quantum register may be optically addressable, so that quantum information can be initialized and read out optically from each register, and moved from one register to another through the dark spin chain, though an adiabatic sequential swap or through free-fermion state transfer. A scalable architecture for the QIP may include an array of super-plaquettes, each super-plaquette including a lattice of individually optically addressable plaquettes coupled to each other through dark spin chains, and separately controllable by confined microwave fields so as to permit parallel operations.

    摘要翻译: 量子信息处理器(QIP)可以包括多个量子寄存器,每个量子寄存器包含至少一个核自旋和至少一个局部电子自旋。 至少一些量子寄存器可以通过包括一系列光学不可寻址自旋的黑暗自旋链相互耦合。 每个量子寄存器可以是可光寻址的,使得量子信息可以从每个寄存器被光学初始化和读出,并且通过暗自旋链从一个寄存器移动到另一个寄存器,尽管通过绝热的顺序互换或通过自由费米子状态传送。 用于QIP的可扩展架构可以包括超级平板阵列,每个超级平板包括通过暗自旋链彼此耦合的单独光学寻址的晶片的格子,并且可以通过约束的微波场单独控制,以允许并行操作。

    Unforgeable Noise-Tolerant Quantum Tokens
    10.
    发明申请
    Unforgeable Noise-Tolerant Quantum Tokens 审中-公开
    不可伪造的噪声容限量子令牌

    公开(公告)号:US20140358793A1

    公开(公告)日:2014-12-04

    申请号:US14366341

    申请日:2012-12-23

    摘要: A quantum ticket is defined by a unique serial number; and a set of qubits, each qubit encoding quantum information. The serial number and the set of qubits are distributed only among one or more trusted verifiers who require a tolerance fidelity Ftol in order to authenticate the token, where Ftol represents a minimum percentage of correct outcomes during authentication of the serial number and the set of qubits. The experimental fidelity Fexp for the quantum token is greater than the Ft0i set by the verifiers, so that an honest user of the quantum ticket who achieves Fexp is exponentially likely to be successfully authenticated when seeking authentication by any of the trusted verifiers. The forging fidelity Fforg for the quantum token is less than Ft0i, so that a dishonest user who achieves Fforg and attempts forgery of the quantum ticket is exponentially likely to fail to obtain authentication for his forged ticket.

    摘要翻译: 量子票由唯一的序列号定义; 和一组量子位,每个量子位编码量子信息。 序列号和量子位集合仅在需要容限保真度Ftol的一个或多个可信验证者之间分配以验证令牌,其中Ftol表示在序列号和数组位集合中的正确结果的最小百分比 。 量子令牌的实验保真度Fexp大于验证者设置的Ft0i,从而在通过任何受信任的验证者进行身份验证时,实现Fexp的量子单元的诚实用户在成功认证时可能被成功认证。 量子令牌的锻造保真度Fforg小于Ft0i,使得实现Fforg并尝试伪造量子票的不诚实用户在数值上可能无法获得他的伪造票证书。