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    Heat rays reflecting film
    1.
    发明授权
    Heat rays reflecting film 失效
    热射线反射膜

    公开(公告)号：US4461532A

    公开(公告)日：1984-07-24

    申请号：US372827

    申请日：1982-04-28

    申请人： Susumu Sato ,  Tadashi Hattori ,  Yoshiki Ueno ,  Takashi Taguchi

    发明人： Susumu Sato ,  Tadashi Hattori ,  Yoshiki Ueno ,  Takashi Taguchi

    IPC分类号： E06B9/24 ,  B32B7/02 ,  C03C17/34 ,  G02B5/28 ,  G02B5/22

    CPC分类号： G02B5/282

    摘要： A heat rays reflecting film composed of dielectric thin layers (n.sub.H layers) having a relatively high refractive index and dielectric thin layers (n.sub.L layers) having a relatively low refractive index which are alternately piled on one another, is disclosed. The first layer of the heat rays reflecting film, which contacts with the air is n.sub.L layer and the undermost layer which contacts with the window glass is n.sub.H layer. The optical thickness of the first layer is less than .lambda./4 while that of the other layers is .lambda./4. And the thickness of each layer is expressed by the formula: optical thickness/nv wherein nv is the refractive index for visible rays.

    摘要翻译： 公开了一种由具有较高折射率的电介质薄层（nH层）和具有较低折射率的电介质薄层（nL层）组成的热射线反射膜，它们彼此交替堆叠。 与空气接触的热射线反射膜的第一层为nL层，与窗玻璃接触的最下层为nH层。 第一层的光学厚度小于λ/ 4，而其他层的光学厚度为λ/ 4。 并且每层的厚度由下式表示：光学厚度/ nv，其中nv是可见光的折射率。

    Heat-blocking glass
    2.
    发明授权
    Heat-blocking glass 失效
    隔热玻璃

    公开(公告)号：US4581280A

    公开(公告)日：1986-04-08

    申请号：US515873

    申请日：1983-07-21

    申请人： Takashi Taguchi ,  Tadashi Hattori ,  Susumu Sato ,  Yoshiki Ueno

    发明人： Takashi Taguchi ,  Tadashi Hattori ,  Susumu Sato ,  Yoshiki Ueno

    IPC分类号： C03C17/34 ,  G02B5/28 ,  B32B9/04 ,  B32B13/04

    CPC分类号： C03C17/3417 ,  G02B5/282 ,  Y10T428/24942

    摘要： A heat-blocking glass comprising: a first layer of infrared rays-blocking film of any thickness formed on a substrate; a plurality of intermediate layers from a second to a (2n+2)th layer (n: positive integral) stacked on said first layer, the optical thickness of each intermediate layer being .lambda./4 (.lambda.: design wavelength); and an uppermost (+3)th layer of a .lambda./8 optical thickness. The refractive index of the first layer is smaller than the refractive index of the second layer. The refractive index of each layer from the second layer to the uppermost layer is arranged so that high-refractive-index layers and low-refractive-index layers are alternately stacked, the second layer being disposed as a high-refractive-index layer.

    摘要翻译： 一种隔热玻璃，包括：形成在基板上的任何厚度的第一红外线阻挡膜; 堆叠在所述第一层上的从第二至第（2n + 2）层（n：正整数）的多个中间层，每个中间层的光学厚度为λ/ 4（λ：设计波长）; 和λ/ 8光学厚度的最上（+3）层。 第一层的折射率小于第二层的折射率。 从第二层到最上层的每层的折射率被布置成使得高折射率层和低折射率层交替堆叠，第二层被设置为高折射率层。

    Heat reflection film
    3.
    发明授权
    Heat reflection film 失效
    热反射膜

    公开(公告)号：US4556599A

    公开(公告)日：1985-12-03

    申请号：US664396

    申请日：1984-10-23

    申请人： Susumu Sato ,  Tadashi Hattori ,  Yoshiki Ueno ,  Takashi Taguchi

    发明人： Susumu Sato ,  Tadashi Hattori ,  Yoshiki Ueno ,  Takashi Taguchi

    IPC分类号： C03C17/34 ,  B32B7/02 ,  B32B15/06 ,  G02B5/28 ,  G02B5/22 ,  B32B17/06

    CPC分类号： G02B5/282 ,  Y10T428/24975

    摘要： A heat-reflection film comprising:a first layer formed on a base plate, the optical thickness of the first layer being approximately .lambda./8 or 3.lambda./8, in which .lambda. is the designed wavelength;a plurality of intermediate layers from a second layer to a (2n+2)th layer, in which n is a positive integral number, the optical thickness of each intermediate layer being .lambda./4; andan uppermost (2n+3)th layer, the optical thickness of which is approximately .lambda./8,wherein n.sub.g

    摘要翻译： 一种热反射膜，包括：形成在基板上的第一层，第一层的光学厚度约为λ/ 8或3λ/ 8，其中λ是设计的波长; 从第二层到第（2n + 2）层的多个中间层，其中n为正整数，每个中间层的光学厚度为λ/ 4; 和最上面（2n + 3）层，其光学厚度近似为λ/ 8，其中ng

    Compound semiconductor substrate having a hetero-junction and a field-effect transistor using the same
    4.
    发明授权
    Compound semiconductor substrate having a hetero-junction and a field-effect transistor using the same 失效
    具有异质结的复合半导体衬底和使用其的场效应晶体管

    公开(公告)号：US5449928A

    公开(公告)日：1995-09-12

    申请号：US120379

    申请日：1993-09-14

    申请人： Kazuoki Matsugatani ,  Takashi Taguchi ,  Yoshiki Ueno ,  Tadashi Hattori

    发明人： Kazuoki Matsugatani ,  Takashi Taguchi ,  Yoshiki Ueno ,  Tadashi Hattori

    IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/205 ,  H01L29/778 ,  H01L29/64

    CPC分类号： H01L29/7783 ,  H01L29/205

    摘要： A pseudomorphic HEMT of a structure which prevents the distribution of 2DEG in the channel layer from being concentrated near the hetero-interface relative to a doping layer and which, at the same time, enables the thickness of the channel layer to which distortion is imparted to be decreased. In an n-InAlAs/InGaAs pseudomorphic structure grown on an InP substrate 1, an InGaAs spacer layer 4 having an In composition ratio smaller than that of an InGaAs channel layer 3 is inserted in an InAlAs/InGaAs hetero-interface. The InGaAs channel layer 3 has an In composition ratio of 0.80 to exhibit a high mobility. Another InAlAs buffer layer 2, spacer layer 5 and doping layer 6 have an In composition ratio of 0.52 which is in lattice-match with the substrate, and InGaAs spacer layer 4 and cap layer 7 have an In composition ratio of 0.53 which is in lattice-match with the substrate. This constitution makes it possible to control the two-dimensional electron gas and to further increase the mobility.

    摘要翻译： 阻止2DEG在沟道层中的分布的伪形HEMT相对于掺杂层被集中在异质界面附近，并且同时使得能够使畸变被赋予的沟道层的厚度 减少 在InP衬底1上生长的n-InAlAs / InGaAs伪晶体结构中，In InAs / InGaAs异质界面中插入具有小于InGaAs沟道层3的In组成比的InGaAs间隔层4。 InGaAs沟道层3的In组成比为0.80，具有高迁移率。 另一种InAlAs缓冲层2，间隔层5和掺杂层6的In组成比为0.52，与衬底晶格匹配，InGaAs间隔层4和覆盖层7的In组成比为0.53，晶格 - 与底物匹配。 这种结构使得可以控制二维电子气并进一步提高迁移率。

    Compound semiconductor device for reducing the influence of resistance anisotropy on operating characteristics thereof
    5.
    发明授权
    Compound semiconductor device for reducing the influence of resistance anisotropy on operating characteristics thereof 失效
    用于减小电阻各向异性对其工作特性的影响的化合物半导体器件

    公开(公告)号：US5367182A

    公开(公告)日：1994-11-22

    申请号：US35754

    申请日：1993-03-24

    申请人： Kazuoki Matsugatani ,  Takashi Taguchi ,  Yoshiki Ueno

    发明人： Kazuoki Matsugatani ,  Takashi Taguchi ,  Yoshiki Ueno

    IPC分类号： H01L29/205 ,  H01L29/778 ,  H01L29/06 ,  H01L29/203

    CPC分类号： H01L29/7783 ,  H01L29/205

    摘要： A compound semiconductor device including a semiconductor substrate having (100) plane as a crystal growth plane, a first semiconductor layer as an electron traveling layer and a second semiconductor layer for supplying electrons to the electron traveling layer. The first semiconductor layer is formed on the semiconductor substrate and has a different lattice constant from the semiconductor substrate so that a first strain is applied in the first semiconductor layer in a first strain direction. The second semiconductor layer is formed on the first semiconductor layer and has a different lattice constant from the first semiconductor layer to thereby apply a second strain to the second semiconductor layer. The second strain has a direction that is inverse to the first strain direction. In addition, the thickness of the semiconductor layer is defined so as to compensate for the first strain applied to the first semiconductor layer by the second strain applied to the second semiconductor.

    摘要翻译： 一种化合物半导体器件，包括具有（100）面作为晶体生长面的半导体衬底，作为电子传播层的第一半导体层和用于向电子传播层提供电子的第二半导体层。 第一半导体层形成在半导体衬底上并且具有与半导体衬底不同的晶格常数，使得第一应变在第一应变方向上施加在第一半导体层中。 第二半导体层形成在第一半导体层上并且具有与第一半导体层不同的晶格常数，从而向第二半导体层施加第二应变。 第二应变具有与第一应变方向相反的方向。 此外，半导体层的厚度被限定为通过施加到第二半导体的第二应变来补偿施加到第一半导体层的第一应变。

    OUTPUT CIRCUIT AND OUTPUT CONTROL SYSTEM
    6.
    发明申请
    OUTPUT CIRCUIT AND OUTPUT CONTROL SYSTEM 失效
    输出电路和输出控制系统

    公开(公告)号：US20120229164A1

    公开(公告)日：2012-09-13

    申请号：US13235953

    申请日：2011-09-19

    申请人： Takashi Taguchi ,  Hiroyuki Ideno

    发明人： Takashi Taguchi ,  Hiroyuki Ideno

    IPC分类号： H03K19/0175

    CPC分类号： H03K19/018521 ,  H03K3/35613 ,  H03K19/09429

    摘要： An output circuit which outputs an output signal based on an input signal from an output terminal and brings the output terminal into a high impedance state in response to an impedance control signal. The output circuit includes an output pMOS transistor connected at a source thereof to a first power supply. The output circuit includes an output nMOS transistor connected between a drain of the output pMOS transistor and ground. The output circuit includes an output terminal connected between the drain of the output pMOS transistor and a drain of the output nMOS transistor. The output circuit includes a first level shifter circuit which outputs a first gate control signal from a first gate control terminal to control on/off of the output pMOS transistor. The output circuit includes a second level shifter circuit which outputs a second gate control signal from a second gate control terminal to control on/off of the output nMOS transistor.

    摘要翻译： 输出电路，其根据来自输出端子的输入信号输出输出信号，并根据阻抗控制信号使输出端子成为高阻抗状态。 输出电路包括在其源极处连接到第一电源的输出pMOS晶体管。 输出电路包括连接在输出pMOS晶体管的漏极和地之间的输出nMOS晶体管。 输出电路包括连接在输出pMOS晶体管的漏极和输出nMOS晶体管的漏极之间的输出端子。 输出电路包括第一电平移位器电路，其输出来自第一栅极控制端子的第一栅极控制信号以控制输出pMOS晶体管的导通/截止。 输出电路包括第二电平移位器电路，其输出来自第二栅极控制端子的第二栅极控制信号以控制输出nMOS晶体管的导通/截止。

    Substrate processing apparatus and substrate processing method
    7.
    发明申请
    Substrate processing apparatus and substrate processing method 审中-公开
    基板加工装置及基板处理方法

    公开(公告)号：US20060147201A1

    公开(公告)日：2006-07-06

    申请号：US11294877

    申请日：2005-12-06

    申请人： Toru Asano ,  Yukio Toriyama ,  Takashi Taguchi ,  Tsuyoshi Mitsuhashi ,  Koji Kaneyama ,  Tsuyoshi Okumura

    发明人： Toru Asano ,  Yukio Toriyama ,  Takashi Taguchi ,  Tsuyoshi Mitsuhashi ,  Koji Kaneyama ,  Tsuyoshi Okumura

    IPC分类号： G03D5/00

    CPC分类号： G03F7/70991 ,  G03F7/70341

    摘要： An interface transport mechanism employs an upper hand during the transport of a substrate to an exposure device, and employs a lower hand during the transport of the substrate that has been carried out of the exposure device. A fifth central robot employs a lower hand during the transport of a substrate after the exposure processing by an exposure device, and employs an upper hand during the transport of a substrate after the drying processing that has been carried out of a drying processing group. That is, the upper hand is employed to transport a substrate to which no liquid is attached, and the lower hand is employed to transport a substrate to which a liquid is attached after the exposure processing.

    摘要翻译： 接口传送机构在将基板传送到曝光装置期间采用上手，并且在已经从曝光装置执行的基板的传送期间使用下手。 第五中央机器人在通过曝光装置进行曝光处理之后的基板传送期间使用下手，并且在从干燥处理组进行的干燥处理之后的基板的输送过程中采用上手。 也就是说，上面用于输送没有附着液体的基板，并且在曝光处理之后使用下手来输送附着有液体的基板。

    Dispensing carton for a roll film
    10.
    发明授权
    Dispensing carton for a roll film 失效
    分配卷筒纸

    公开(公告)号：US5078311A

    公开(公告)日：1992-01-07

    申请号：US711552

    申请日：1991-05-20

    申请人： Takashi Taguchi ,  Yorio Takemura

    发明人： Takashi Taguchi ,  Yorio Takemura

    IPC分类号： B65D5/72 ,  B65D83/08 ,  B65D85/672 ,  B65H35/00

    CPC分类号： B65H35/0006 ,  B65D83/0841 ,  B65D83/0882 ,  B65D85/672 ,  B65H2701/1752 ,  Y10T225/243 ,  Y10T225/251 ,  Y10T225/298

    摘要： A dispensing carton in which a film wound cylindrically is contained includes a bottom panel, a rear panel, a front panel, both side panels, a lid member which is hingedly joined to the rear panel, a front flange joined to an end of the lid member to overlap the front panel when said lid member is closed, and a cutter mounted along an end of the front flange. The front flange includes a convex edge including, for example, a V-shaped edge. A saw-tooth edge of the cutter mounted along the end of the front flange is arranged into a convex shape such as V-shape. A length from the tip of at least one tooth of the saw-tooth edge nearest to a base of the box to the bottom of a gullet adjacent to the tooth is longer than a length from the tip of other teeth to the bottom of gullets adjacent to the other teeth. When the film is pulled out of the carton and further pulled in the horizontal direction or twisted while being pulled, the tooth of the cutter nearest to the base of the box first cuts into the film. Then, when the film is further pulled, the cut of the film is extended along the arrangement of teeth of the saw-tooth edge so that film is cut easily and completely while keeping the film spread horizontally.