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    Fabrication of quantum well polarization independent active devices
    1.
    发明授权
    Fabrication of quantum well polarization independent active devices 失效
    量子阱极化独立有源器件的制造

    公开(公告)号：US5757023A

    公开(公告)日：1998-05-26

    申请号：US787958

    申请日：1997-01-23

    申请人： Emil S. Koteles ,  Jian Jun He ,  Sylvain Charbonneau ,  Philip J. Poole

    发明人： Emil S. Koteles ,  Jian Jun He ,  Sylvain Charbonneau ,  Philip J. Poole

    IPC分类号： G02F1/017 ,  H01S5/34 ,  H01S5/50 ,  H01L29/06

    CPC分类号： B82Y20/00 ,  G02F1/017 ,  H01S5/5009 ,  G02F2001/01766 ,  G02F2203/06 ,  H01S5/3404 ,  H01S5/3413 ,  H01S5/3414

    摘要： An active semiconductor device that performs in a substantially polarization independent manner. A quantum well waveguide is intermixed by intermixing atoms across an interface between well and barrier layers. The atoms include at least 2 groups wherein intermixing of one group is at a substantially greater rate than another group. Cations are interdiffused at a greater rate than said anions across interfaces between well and barrier layers. The intermixing must be sufficient to provide strain within layers of the waveguide and sufficient to at least partially degenerate light hole and heavy hole bands of the structure. Preferably intermixing is sufficient to completely degenerate light hole and heavy hold bands to essentially produce a device that is completely polarization independent.

    摘要翻译： 一种以基本上极化独立的方式执行的有源半导体器件。 量子阱波导通过在阱和阻挡层之间的界面上混合原子而混合。 这些原子包括至少2个基团，其中一个基团的混合速率比另一个基本上更大的速率。 阳离子在井和阻隔层之间的界面上以比所述阴离子更大的速率相互扩散。 混合必须足以在波导的层内提供应变，并且足以使结构的光孔和重孔带至少部分地退化。 优选地，混合足以使光孔和重保持带完全退化以基本上产生完全极化独立的装置。

    Method of bandgap tuning of semiconductor quantum well structures
    3.
    发明授权
    Method of bandgap tuning of semiconductor quantum well structures 失效
    半导体量子阱结构的带隙调谐方法

    公开(公告)号：US5395793A

    公开(公告)日：1995-03-07

    申请号：US172094

    申请日：1993-12-23

    申请人： Sylvain Charbonneau ,  Emil S. Koteles

    发明人： Sylvain Charbonneau ,  Emil S. Koteles

    IPC分类号： G02B6/12 ,  G02B6/134 ,  H01L21/18 ,  H01L21/20 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  G02B6/1347 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02694 ,  H01L21/182 ,  G02B2006/12169 ,  H01S5/3413 ,  H01S5/3414

    摘要： A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostuctures of interest are IH-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

    摘要翻译： 选择性地调谐半导体异质结构的带边的方法包括重复形成空间上与量子阱有源区域分离的无序区域，随后在形成无序区域之后每次退火异质结构，使得无序区域中的空位/缺陷 扩散到量子阱区域，并增强了阱屏障异质结的相互扩散。 重复，随后退火的混乱使得带隙调谐范围更大。 感兴趣的异质结构是诸如AlGaAs / GaAs的IH-V材料体系，其中活性区域包括诸如单量子阱，多量子阱或超晶格的结构。