公开(公告)号：US10950465B2

公开(公告)日：2021-03-16

申请号：US15826074

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Shotaro Kitayama ,  Gentaro Goshi ,  Hiroki Ohno ,  Keisuke Egashira ,  Yosuke Kawabuchi ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Hiromi Kiyose

IPC: H01L21/67 ,  B08B3/08 ,  B08B5/00 ,  F26B5/00 ,  B08B9/00 ,  C11D11/00 ,  C11D7/26 ,  B08B15/00

Abstract: Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. The cleaning gas filling process fills a cleaning gas containing isopropyl alcohol in the substrate processing apparatus. The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process.

公开(公告)号：US20170186620A1

公开(公告)日：2017-06-29

申请号：US15371707

申请日：2016-12-07

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Marumoto ,  Hisashi Kawano ,  Hiromi Kiyose ,  Mitsunori Nakamori ,  Kazuyuki Mitsuoka

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/324 ,  H01L21/311 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/02082 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/324 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708

Abstract: A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.

公开(公告)号：US11508588B2

公开(公告)日：2022-11-22

申请号：US16616062

申请日：2018-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiromi Kiyose

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/02

Abstract: A substrate treatment device according to an embodiment includes: a liquid treatment part configured to supply a liquid onto a substrate to form a liquid film remaining in a liquid state on the substrate; an imaging part configured to capture an image of a front surface of the substrate, on which the liquid film remaining in the liquid state is formed; a determination part configured to determine a quality of a formation state of the liquid film based on the captured image of the substrate; and a post-treatment part configured to treat the substrate on which the liquid film is formed, when the determination part determines that the formation state of the liquid film is good.

公开(公告)号：US10395950B2

公开(公告)日：2019-08-27

申请号：US15801803

申请日：2017-11-02

Applicant: Tokyo Electron Limited

Inventor： Gentaro Goshi ,  Keisuke Egashira ,  Yosuke Kawabuchi ,  Hiromi Kiyose ,  Takuro Masuzumi ,  Hiroki Ohno ,  Kento Tsukano ,  Hiroshi Marumoto ,  Shotaro Kitayama

IPC: B01J3/00 ,  B01J3/06 ,  B08B7/00 ,  H01L21/02 ,  H01L21/67

Abstract: A substrate processing apparatus performs: a pressure raising process of raising a pressure within the processing container to a processing pressure higher than a critical pressure of the processing fluid, after the substrate is accommodated in the processing container; and a circulation process of supplying the processing fluid to the processing container and discharging the processing fluid from the processing container while keeping a pressure at which the processing fluid is maintained in the supercritical state, within the processing container. In the pressure raising process, the supply of the processing fluid from the second fluid supply unit is stopped and the processing fluid is supplied from the first fluid supply unit into the processing container until at least the pressure within the processing container reaches the critical pressure. In the circulation process, the processing fluid is supplied into the processing container from the second fluid supply unit.

公开(公告)号：US20180138035A1

公开(公告)日：2018-05-17

申请号：US15814592

申请日：2017-11-16

Applicant: Tokyo Electron Limited

Inventor： Hiroki Ohno ,  Keisuke Egashira ,  Gentaro Goshi ,  Yosuke Kawabuchi ,  Shotaro Kitayama ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Hiromi Kiyose

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6719

Abstract: During at least part of a time period for a pressure increasing step of increasing a pressure inside a processing container from a pressure lower than a critical pressure of a processing fluid to a pressure higher than the critical pressure, pressure increasing is performed by supplying the processing fluid into the processing container from a fluid supply source while discharging the processing fluid from the processing container at a controlled discharge flow rate. Particles attached to the surfaces of members inside the processing container travel upward by the supply of the processing fluid into the processing container from the fluid supply source. The particles are discharged along with the processing fluid from the processing container.

公开(公告)号：US20170254589A1

公开(公告)日：2017-09-07

申请号：US15441864

申请日：2017-02-24

Applicant: Tokyo Electron Limited

Inventor： Gentaro Goshi ,  Hiromi Kiyose ,  Satoshi Biwa

IPC: F26B21/14 ,  H01L21/67 ,  H01L21/02 ,  F26B5/00 ,  F26B9/06

CPC classification number: F26B21/14 ,  F26B5/00 ,  F26B9/06 ,  H01L21/02101 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: Provided is a substrate processing apparatus including a processing container configured to receive a substrate on which a dry preventing liquid is filled and perform a supercritical processing on the substrate; a fluid supply line connected to the processing container and configured to supply a processing fluid to the processing container; a fluid discharge line connected to the processing container and configured to discharge the processing fluid in the processing container; and a first circulation line connected to an upstream side and a downstream side of the processing container, and provided independently from the fluid supply line and the fluid discharge line to circulate the processing fluid in the processing container. The first circulation line is provided with a first reservoir tank that receives the processing fluid from the processing container and has a capacity larger than that of the processing container.

公开(公告)号：US11322371B2

公开(公告)日：2022-05-03

申请号：US16182711

申请日：2018-11-07

Applicant: Tokyo Electron Limited

Inventor： Hiromi Kiyose

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  B08B3/10

Abstract: A substrate processing apparatus includes a liquid film forming unit 16A configured to form a liquid film of a liquid for anti-drying on a substrate; a drying processing unit 16B configured to dry the substrate; and a transfer mechanism 17 configured to transfer the substrate from the liquid film forming unit into the drying processing unit. By a transfer time adjusting operation of adjusting a volatilization amount of the liquid during a transfer of the substrate by adjusting a transfer time during which the substrate is transferred from the liquid film forming unit into the drying processing unit or by an initial liquid film thickness adjusting operation of adjusting a thickness of the liquid film formed in the liquid film forming unit, the thickness of the liquid film when a drying processing is begun in the drying processing unit is controlled to fall within a target range.

公开(公告)号：US20190355574A1

公开(公告)日：2019-11-21

申请号：US16411404

申请日：2019-05-14

Applicant: Tokyo Electron Limited

Inventor： Itaru Kanno ,  Hiromi Kiyose ,  Gentaro Goshi ,  Naohiko Hamamura ,  Takuro Masuzumi ,  Kenji Sekiguchi ,  Satoru Tanaka ,  Teruomi Minami

IPC: H01L21/02 ,  H01L21/67 ,  F26B3/28

Abstract: A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

公开(公告)号：US20190051519A1

公开(公告)日：2019-02-14

申请号：US16058032

申请日：2018-08-08

Applicant: Tokyo Electron Limited

Inventor： Kento Tsukano ,  Gentaro Goshi ,  Takuro Masuzumi ,  Hiromi Kiyose ,  Shogo Fukui

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B3/04 ,  B08B3/08 ,  B08B3/10

Abstract: In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

公开(公告)号：US11201050B2

公开(公告)日：2021-12-14

申请号：US16411404

申请日：2019-05-14

Applicant: Tokyo Electron Limited

Inventor： Itaru Kanno ,  Hiromi Kiyose ,  Gentaro Goshi ,  Naohiko Hamamura ,  Takuro Masuzumi ,  Kenji Sekiguchi ,  Satoru Tanaka ,  Teruomi Minami

IPC: F26B3/34 ,  H01L21/02 ,  F26B3/28 ,  H01L21/67

Abstract: A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.