公开(公告)号：US20240203694A1

公开(公告)日：2024-06-20

申请号：US18067917

申请日：2022-12-19

Applicant: Tokyo Electron Limited

Inventor： Takuji SAKO ,  Kyohei NOGUCHI ,  Masaki HOSONO ,  Masahiro YAMAMOTO ,  Julen AROZAMENA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J37/32357 ,  H01J37/32816 ,  H01J2237/1825 ,  H01J2237/334

Abstract: An etching method of etching silicon formed on a side surface of a recess that exists in a substrate includes: forming an oxide film on a surface of the silicon by performing a radical oxidation processing on the substrate; performing a chemical processing with a gas on the oxide film; and removing a reaction product produced by the chemical processing, wherein the forming the oxide film includes: a first phase of performing a radical processing with a plasma of an oxygen-containing gas; and a second phase of performing a radical processing with a plasma of the oxygen-containing gas and an etching gas, and wherein the forming the oxide film, the performing the chemical processing, and the removing the reaction product are repeated multiple times.

公开(公告)号：US20170250086A1

公开(公告)日：2017-08-31

申请号：US15443687

申请日：2017-02-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomonari URANO ,  Kyohei NOGUCHI ,  Osamu YOKOYAMA ,  Takashi KOBAYASHI ,  Satoshi WAKABAYASHI ,  Takashi SAKUMA

IPC: H01L21/285 ,  H01L21/673 ,  H01L21/67

CPC classification number: H01L21/28556 ,  C23C16/08 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45555 ,  H01L21/28518 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67393 ,  H01L21/76843 ,  H01L21/76862

Abstract: A substrate processing method is for forming a metal film on a target substrate by using a plasma. The method includes loading a target substrate having a silicon-containing layer on a surface thereof into a processing chamber which is pre-coated by a film containing a metal, introducing hydrogen gas and a gaseous compound of the metal and halogen into the processing chamber, generating a plasma, and forming a metal film on the target substrate. The method further includes performing a first reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, unloading the target substrate from the processing chamber, performing a second reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, and loading a next target substrate into the processing chamber.