公开(公告)号：US20230131213A1

公开(公告)日：2023-04-27

申请号：US17973934

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Isao GUNJI ,  Masahiro OKA ,  Minoru HONDA ,  Takashi KOBAYASHI

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H01J37/32 ,  C23C16/50 ,  C23C16/56 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30 ,  C23C16/24 ,  C23C16/52

Abstract: A film forming method includes: preparing a substrate having a recess within a processing container; forming a silicon-containing film on the substrate by activating a silicon-containing gas with plasma and supplying the activated silicon-containing gas to the substrate; partially modifying the silicon-containing film after the silicon-containing film closes an opening of the recess; and selectively etching the modified silicon-containing film.

公开(公告)号：US20240337022A1

公开(公告)日：2024-10-10

申请号：US18624402

申请日：2024-04-02

Applicant: Tokyo Electron Limited

Inventor： Kensaku NARUSHIMA ,  Takashi KOBAYASHI ,  Shinya OKABE ,  Takashi SAKUMA ,  Kunihiro TADA ,  Satoshi YOSHIDA

IPC: C23C16/509 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/509 ,  C23C16/14 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/45512 ,  C23C16/46

Abstract: A film forming apparatus, including a processing container, an interior of which is configured to be depressurized, an electrode configured to generate an electric field in a processing space inside the processing container, a radio frequency power supply configured to supply radio frequency power to the electrode, a stage arranged in the processing container to place a substrate thereon, and a film forming gas introduction part configured to introduce vaporized zirconium chloride into the processing space. The film forming gas introduction part is made of a metal and is grounded.

公开(公告)号：US20170250086A1

公开(公告)日：2017-08-31

申请号：US15443687

申请日：2017-02-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomonari URANO ,  Kyohei NOGUCHI ,  Osamu YOKOYAMA ,  Takashi KOBAYASHI ,  Satoshi WAKABAYASHI ,  Takashi SAKUMA

IPC: H01L21/285 ,  H01L21/673 ,  H01L21/67

CPC classification number: H01L21/28556 ,  C23C16/08 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45555 ,  H01L21/28518 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67393 ,  H01L21/76843 ,  H01L21/76862

Abstract: A substrate processing method is for forming a metal film on a target substrate by using a plasma. The method includes loading a target substrate having a silicon-containing layer on a surface thereof into a processing chamber which is pre-coated by a film containing a metal, introducing hydrogen gas and a gaseous compound of the metal and halogen into the processing chamber, generating a plasma, and forming a metal film on the target substrate. The method further includes performing a first reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, unloading the target substrate from the processing chamber, performing a second reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, and loading a next target substrate into the processing chamber.