公开(公告)号：US20180245216A1

公开(公告)日：2018-08-30

申请号：US15899672

申请日：2018-02-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Noriaki FUKIAGE ,  Shimon OTSUKI ,  Muneyuki OTANI ,  Takayuki KARAKAWA ,  Takeshi OYAMA ,  Masahide IWASAKI

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/683 ,  C23C16/34

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/511 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6835

Abstract: A film forming apparatus for carrying out a film forming process on a substrate by performing a cycle of sequentially supplying a first processing gas and a second processing gas a plurality of times in a vacuum container, includes: a rotary table having one surface on which a substrate mounting region for mounting a substrate is formed; a first gas supply part including a gas discharge portion having gas discharge holes of a first gas with a uniform hole diameter, an exhaust port surrounding the gas discharge portion, and a purge gas discharge port surrounding the gas discharge portion, which are formed on an opposing surface opposite the rotary table; a second gas supply part configured to supply a second gas to a region spaced apart in a circumferential direction of the rotary table from the first gas supply part; and an evacuation port configured to evacuate the vacuum container.

公开(公告)号：US20150155141A1

公开(公告)日：2015-06-04

申请号：US14557569

申请日：2014-12-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo KOBAYASHI ,  Masahide IWASAKI ,  Koji YAMAGISHI

IPC: H01J37/32

CPC classification number: H01J37/32513 ,  H01J37/32192 ,  H01J37/32522

Abstract: A plasma processing apparatus of the present disclosure includes a processing container provided with an opening to carry an object to be processed (“workpiece”) into or out of a chamber adjacent to the processing container; a microwave introducing mechanism configured to introduce microwaves into the processing container; an exhaust device configured to evacuate the processing container; and a thermal insulating member provided between an outer surface of a gate valve that is provided near the opening and the chamber adjacent to the processing container. The thermal insulating member is coated with a conductive film at least on a surface of the thermal insulating member facing the outer surface of the gate valve, a surface of the thermal insulating member facing the chamber adjacent to the processing container, and a surface of the thermal insulating member exposed to outer air.

Abstract translation: 本公开的等离子体处理装置包括处理容器，该处理容器设置有将待加工物体（“工件”）搬入或离开与处理容器相邻的室的开口; 微波引入机构，其构造成将微波引入到处理容器中; 排气装置，其构造成抽空处理容器; 以及设置在设置在开口附近的闸阀的外表面与邻近处理容器的室之间的绝热构件。 绝热构件至少在绝热构件的面对门阀的外表面的表面上涂覆有导电膜，隔热构件的面向邻近处理容器的室的表面，以及 绝热构件暴露于外部空气。

公开(公告)号：US20150159269A1

公开(公告)日：2015-06-11

申请号：US14609851

申请日：2015-01-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA ,  Shinji KOMOTO ,  Masahide IWASAKI

IPC: C23C16/44 ,  C23C16/511

CPC classification number: C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

Abstract: Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.

公开(公告)号：US20150159270A1

公开(公告)日：2015-06-11

申请号：US14609862

申请日：2015-01-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshihisa NOZAWA ,  Shinji KOMOTO ,  Masahide IWASAKI

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

Abstract: Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.

Abstract translation: 提供了一种等离子体处理装置，其包括从排气孔延伸到泵的排气路径，其中，泵构造成在处理容器和排气路径内部减压，其中排气路径包括水平线性延伸部分，其中水平 排气路径的直线延伸部分具有水平长度大于垂直长度的矩形或椭圆形横截面; 其中所述等离子体处理装置还包括设置在所述排气路径的水平线性延伸部分中的压力控制阀; 并且其中所述压力控制阀由具有与所述横截面形状和尺寸基本相同的形状和尺寸的压力控制阀板和沿所述横截面的水平长度形成在所述压力控制阀中的轴以这种方式形成 压力控制阀板围绕轴旋转。

公开(公告)号：US20140290860A1

公开(公告)日：2014-10-02

申请号：US14257040

申请日：2014-04-21

Applicant: Tokyo Electron Limited

Inventor： Masahide IWASAKI

IPC: H01J37/32 ,  C23C16/511

CPC classification number: H01J37/32192 ,  C23C16/511 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32449

Abstract: A plasma process apparatus that utilizes plasma so as to perform a predetermined process on a substrate, and includes a process chamber that houses a substrate subjected to the predetermined plasma process; a microwave generator; a dielectric window attached to the process chamber and provided with a concave portion provided at an outer surface of the dielectric window opposite to the process chamber and a through hole penetrating the dielectric window to the process chamber; a microwave transmission line; and a first process gas supplying portion including a gas conduit including a first portion provided at a front end and a second portion having a larger diameter than the first portion, the gas conduit being inserted from outside of the process chamber such that the first portion is inserted in the through hole and the second portion is inserted in the concave portion.

Abstract translation: 一种等离子体处理装置，其使用等离子体以在基板上执行预定处理，并且包括容纳经过预定等离子体处理的基板的处理室; 微波发生器; 电介质窗口，其附接到所述处理室并且设置有设置在所述介电窗口的与所述处理室相对的外表面处的凹部和穿过所述介电窗口到所述处理室的通孔; 微波传输线; 以及第一工艺气体供给部，其包括气体导管，所述气体导管包括设置在前端的第一部分和具有比所述第一部分更大直径的第二部分，所述气体导管从所述处理室的外部插入，使得所述第一部分是 插入到所述通孔中，并且所述第二部分插入到所述凹部中。

公开(公告)号：US20180108515A1

公开(公告)日：2018-04-19

申请号：US15844736

申请日：2017-12-18

Applicant: Tokyo Electron Limited

Inventor： Masahide IWASAKI

IPC: H01J37/32 ,  C23C16/511

CPC classification number: H01J37/32192 ,  C23C16/511 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32449

Abstract: A plasma process apparatus that utilizes plasma so as to perform a predetermined process on a substrate, and includes a process chamber that houses a substrate subjected to the predetermined plasma process; a microwave generator; a dielectric window attached to the process chamber and provided with a concave portion provided at an outer surface of the dielectric window opposite to the process chamber and a through hole penetrating the dielectric window to the process chamber; a microwave transmission line; and a first process gas supplying portion including a gas conduit including a first portion provided at a front end and a second portion having a larger diameter than the first portion, the gas conduit being inserted from outside of the process chamber such that the first portion is inserted in the through hole and the second portion is inserted in the concave portion.

公开(公告)号：US20160322218A1

公开(公告)日：2016-11-03

申请号：US15140551

申请日：2016-04-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Masahide IWASAKI ,  Toyohiro KAMADA ,  Ryosuke EBIHARA ,  Masanobu IGETA

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/36 ,  H01J37/32 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/45565 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32733 ,  H01J37/32899 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/0228

Abstract: A film forming method for forming a nitride film on a workpiece substrate accommodated within a process vessel, including: performing a first reaction of supplying a first precursor gas to the workpiece substrate accommodated within the process vessel; performing a second reaction of supplying a second precursor gas to the workpiece substrate accommodated within the process vessel; performing a modification of generating plasma of a modifying gas just above the workpiece substrate by supplying the modifying gas into the process vessel and supplying microwaves from an antenna into the process vessel, and plasma-processing, by the plasma thus generated, a surface of the workpiece substrate subjected to the first and second reactions using the first and second precursor gases.

Abstract translation: 一种用于在容纳在处理容器内的工件衬底上形成氮化物膜的成膜方法，包括：对容纳在处理容器内的工件衬底进行第一前体气体的供给; 进行向容纳在处理容器内的工件基板供给第二前体气体的第二反应; 通过将改性气体供给到处理容器中并将微波从天线供给到处理容器中，并通过等离子体等离子体处理等离子体，从而对工件基板上方的修正气体等离子体进行等离子体处理， 使用第一和第二前体气体进行第一和第二反应的工件基板。