公开(公告)号：US20210280401A1

公开(公告)日：2021-09-09

申请号：US17193205

申请日：2021-03-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke HIRAYAMA ,  Shu KUSANO

IPC: H01J37/32

Abstract: An inspection method is provided. The inspection method includes monitoring power of a reflected wave of a power wave supplied from a source power supply for generation of plasma in a plasma processing apparatus, and obtaining a fluctuation amount of a measured value within a period after initiation of the supply of the power wave. The fluctuation amount the measured value is a fluctuation amount indicating a fluctuation in a peak-to-peak voltage at a lower electrode of the substrate support in the chamber or a fluctuation amount indicating a fluctuation in impedance of a load including the lower electrode.

公开(公告)号：US20190378698A1

公开(公告)日：2019-12-12

申请号：US16472339

申请日：2017-12-14

Applicant: Tokyo Electron Limited

Inventor： Shu KUSANO ,  Yusuke HIRAYAMA

IPC: H01J37/32 ,  G01N15/06

Abstract: There is provision of a method of determining wastage including: processing a substrate using a plasma generated by multiple gases including fluorine gas; obtaining light emission intensity of each gas of the multiple gases including fluorine gas from the plasma, by an optical emission spectrometer (OES); and calculating a wastage rate of a particular expendable part from the obtained light emission intensity of each gas of the multiple gases including fluorine gas, with reference to a storage section storing a wastage rate of the particular expendable part in association with the light emission intensity of each gas of the multiple gases including fluorine gas.

公开(公告)号：US20170316919A1

公开(公告)日：2017-11-02

申请号：US15517466

申请日：2015-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke HIRAYAMA ,  Masaaki MIYAGAWA

IPC: H01J37/32 ,  C23C16/44 ,  B29C59/14

CPC classification number: H01J37/32862 ,  B29C59/14 ,  C23C16/0272 ,  C23C16/44 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/509 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32532 ,  H01J37/32917 ,  H01J2237/334 ,  H01L21/205 ,  H01L21/3065 ,  H05H1/46

Abstract: A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing gas after the silicon-containing film is formed on the surface of the member; and a removal step of removing the silicon-containing film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.

公开(公告)号：US20170076956A1

公开(公告)日：2017-03-16

申请号：US15308212

申请日：2015-05-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke HIRAYAMA ,  Masaaki MIYAGAWA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/31116 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32009 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3266 ,  H01J2237/334 ,  H01L21/02115 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/67069 ,  H05H1/46

Abstract: This plasma processing method includes a film formation step, a plasma processing step and a removal step. In the film formation step, a silicon oxide film is formed on the surface of a member within a chamber by means of plasma of an oxygen-containing gas and a silicon-containing gas at a flow rate ratio of the oxygen-containing gas to the silicon-containing gas of 0.2-1.4. In the plasma processing step, after the formation of the silicon oxide film on the surface of the member, an object to be processed that has been carried into the chamber is subjected to plasma processing with use of plasma of a processing gas. In the removal step, after carrying the plasma-processed object out of the chamber, the silicon oxide film is removed from the surface of the member by means of plasma of a fluorine-containing gas.

Abstract translation: 该等离子体处理方法包括成膜步骤，等离子体处理步骤和去除步骤。 在成膜步骤中，通过含氧气体和含硅气体的等离子体以含氧气体的流量比为基准，在室内部件的表面上形成氧化硅膜 含硅气体为0.2-1.4。 在等离子体处理步骤中，在构件表面上形成氧化硅膜之后，使用处理气体的等离子体对被搬运到室内的待处理物进行等离子体处理。 在去除步骤中，在将等离子体处理物体搬出室外之后，通过含氟气体的等离子体从构件的表面除去氧化硅膜。