公开(公告)号：US10991588B2

公开(公告)日：2021-04-27

申请号：US15803876

申请日：2017-11-06

申请人： Toshiba Memory Corporation

发明人： Akifumi Gawase ,  Yukiteru Matsui ,  Takahiko Kawasaki

IPC分类号： H01L21/306 ,  H01L21/687 ,  H01L21/67 ,  H01L21/321

摘要： In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.

公开(公告)号：US10121677B2

公开(公告)日：2018-11-06

申请号：US14989279

申请日：2016-01-06

申请人： TOSHIBA MEMORY CORPORATION

发明人： Yukiteru Matsui ,  Takahiko Kawasaki ,  Akifumi Gawase ,  Kenji Iwade

IPC分类号： H01L21/321 ,  H01L21/768 ,  B24B37/04 ,  H01L21/306 ,  B24B1/00 ,  H01L21/3105

摘要： In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming, on a substrate, protruding portions with first films on the surfaces thereof, respectively, forming a second film different from the first films so as to fill a depressed portion between the protruding portions and to cover the protruding portions, processing in such a manner that the top surface of the second film on the depressed portion is higher than the top surface of the second film on the protruding portions after forming the second film to cover the protruding portions, and polishing the second film on the depressed and protruding portions to expose the first films.

公开(公告)号：US10079153B2

公开(公告)日：2018-09-18

申请号：US15434310

申请日：2017-02-16

申请人： TOSHIBA MEMORY CORPORATION

发明人： Akifumi Gawase ,  Yukiteru Matsui ,  Takahiko Kawasaki

IPC分类号： H01L21/3105 ,  H01L21/265 ,  H01L21/306 ,  H01L21/311 ,  H01L21/04 ,  H01L21/266 ,  H01L21/425 ,  H01L21/426 ,  H01L29/16

CPC分类号： H01L21/31051 ,  H01L21/0465 ,  H01L21/26506 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/425 ,  H01L21/426 ,  H01L29/1608

摘要： In a substrate processing method according to the embodiment, a first material is implanted into a surface of a target film to modify the surface of the target film. The surface of the target film is dissolved to remove the surface of the target film by bringing a catalytic material close to the surface of the target film or by contacting the catalytic material to the surface of the target film while supplying a process solution on the surface of the target film which has been modified.

公开(公告)号：US09837279B2

公开(公告)日：2017-12-05

申请号：US15066408

申请日：2016-03-10

申请人： TOSHIBA MEMORY CORPORATION

发明人： Akifumi Gawase ,  Yukiteru Matsui ,  Takahiko Kawasaki

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/30604 ,  H01L21/32115 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/68764

摘要： In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.

公开(公告)号：US10998283B2

公开(公告)日：2021-05-04

申请号：US16289644

申请日：2019-02-28

申请人： TOSHIBA MEMORY CORPORATION

发明人： Takahiko Kawasaki ,  Yukiteru Matsui ,  Akifumi Gawase

IPC分类号： H01L23/00 ,  H01L25/18 ,  H01L25/00

摘要： A semiconductor device production method includes forming a first recess portion in a first insulating film formed on a first substrate and a first conductive layer on the front surface of the first insulating film located inside and outside the first recess portion. In the first recess portion, a first pad is formed having a width of 3 μm or less and including the first conductive layer by performing a first polishing the first conductive layer at a first polishing rate and, after the first polishing, a second polishing the first conductive layer at a second polishing rate lower than the first polishing rate. The first pad of the first substrate and a second pad of a second substrate are joined together by annealing the first substrate and the second substrate. The selection ratio of the first conductive layer to the first insulating film is 0.3 to 0.4.

公开(公告)号：US10010997B2

公开(公告)日：2018-07-03

申请号：US14847535

申请日：2015-09-08

申请人： TOSHIBA MEMORY CORPORATION

发明人： Akifumi Gawase ,  Yukiteru Matsui ,  Takahiko Kawasaki ,  Yosuke Otsuka ,  Hajime Eda

IPC分类号： B24B37/24 ,  B24B37/04

CPC分类号： B24B37/24 ,  B24B37/042 ,  B24B37/107

摘要： In accordance with an embodiment, a polishing method includes supplying slurry to a surface of a polishing layer including a polymer, and bringing a polishing object into contact with the polishing layer to polish the polishing object. The polishing layer has a fibrous first substance mixed therein or contains a second substance. The second substance is higher in specific heat and higher in thermal conductivity than the polymer in such a manner that the second substance is surrounded by the polymer.

公开(公告)号：US10008390B2

公开(公告)日：2018-06-26

申请号：US14643218

申请日：2015-03-10

申请人： TOSHIBA MEMORY CORPORATION

发明人： Yukiteru Matsui ,  Kyoichi Suguro ,  Akifumi Gawase ,  Takahiko Kawasaki

IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  H01L21/3115 ,  H01L21/321 ,  H01J37/317 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3215

CPC分类号： H01L21/31155 ,  B81C2201/0123 ,  B81C2201/0125 ,  H01J37/3171 ,  H01J2237/31711 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/3215

摘要： A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.

公开(公告)号：US10850363B2

公开(公告)日：2020-12-01

申请号：US14843550

申请日：2015-09-02

申请人： TOSHIBA MEMORY CORPORATION

发明人： Yukiteru Matsui ,  Takahiko Kawasaki ,  Akifumi Gawase ,  Shuji Suzuki ,  Tsutomu Miki

IPC分类号： B24B37/005 ,  G01N29/14 ,  G01N29/44 ,  G01N29/46

摘要： In accordance with an embodiment, a manufacturing method of a semiconductor device includes detecting elastic waves, and detecting or predicting an abnormality of the processing object occurring during polishing of the processing object. The elastic waves are generated from the processing object during the polishing. The abnormality is detected or predicted by analyzing the detected elastic waves.

公开(公告)号：US10195716B2

公开(公告)日：2019-02-05

申请号：US15429542

申请日：2017-02-10

申请人： TOSHIBA MEMORY CORPORATION

发明人： Takahiko Kawasaki ,  Yukiteru Matsui ,  Akifumi Gawase

IPC分类号： B24B53/00 ,  B24B53/017 ,  H01L21/306

摘要： According to one embodiment, a dresser includes a base metal plate, and a plurality of chip portions that are provided on the base metal plate. Each chip portion includes a Si substrate having a projection at an upper portion thereof and a diamond layer provided on the projection of the Si substrate.

公开(公告)号：US20180061654A1

公开(公告)日：2018-03-01

申请号：US15803876

申请日：2017-11-06

申请人： Toshiba Memory Corporation

发明人： Akifumi Gawase ,  Yukiteru Matsui ,  Takahiko Kawasaki

IPC分类号： H01L21/306 ,  H01L21/687 ,  H01L21/67

CPC分类号： H01L21/30604 ,  H01L21/32115 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/68764

摘要： In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.