Abstract:
A semiconductor device may include a semiconductor element; a temperature detecting element provided at a central part of a surface of the semiconductor element, and a heat conductor jointed to the surface of the semiconductor element via a jointing element. The jointing element may include a central part positioned over the temperature detecting element, and a peripheral part positioned on a periphery of the central part of the jointing element. The heat conductor may include a metal part being in contact with the central part of the jointing element, and a graphite part being in contact with the peripheral part of the jointing element.
Abstract:
A cooling type switching element module includes an outer conductor pipe, an inner conductor pipe that transmits electric power in conjunction with the outer conductor pipe, and first and second switching elements. The first switching elements are provided on outer surfaces of the outer conductor pipe, and the second switching elements are provided on outer surfaces of a projecting portion of the inner conductor pipe. A coolant flows within the inner conductor pipe, and outside the outer conductor pipe. The first and second switching elements are cooled from both sides by the coolant flowing within the inner conductor pipe, and by the coolant flowing outside the outer conductor pipe. By employing the above-described structure, it is possible to provide a switching element module having a cooling function, in which improved cooling performance, improved electrical performance, and downsizing are achieved.
Abstract:
A semiconductor device includes a semiconductor module and a cooler. The semiconductor device includes semiconductor element(s) within a molded resin and a heat sink plate exposed on the molded resin. The cooler includes a cooling plate located on the heat sink plate of the semiconductor module via thermal grease. The cooling plate includes a bimetal structure in which two layers having different linear expansion coefficients are laminated. The heat sink plate includes a first facing surface facing the cooling plate and the semiconductor module is configured to thermally expand such that the first facing surface displaces with respect to the cooling plate. The cooling plate includes a second facing surface facing the heat sink plate, and the bimetal structure is configured to thermally expand such that the second facing surface of the cooling plate displaces in a same direction as the first facing surface of the heat sink plate.
Abstract:
A semiconductor device includes a semiconductor element having a rectangular shape in a plan view, and a fixed member to which the semiconductor element is fixed. The semiconductor element is disposed so that a rectangular face of the semiconductor element is faced toward a surface of the fixed member. A part of the rectangular face of the semiconductor element is fixed to the surface of the fixed member. At least corner parts of the rectangular face of the semiconductor element are not fixed to the surface of the fixed member.
Abstract:
A semiconductor device may include: a metal plate including a first surface and a second surface opposite to the first surface; two semiconductor chips bonded to the first surface side by side; a thermally anisotropic member provided at the metal plate between the two semiconductor chips; and a cooler provided on the second surface of the metal plate. A thermal conductivity of the thermally anisotropic member in a side-by-side direction of the two semiconductor chips may be lower than a thermal conductivity of the metal plate, and the thermal conductivity of the thermally anisotropic member in in-plane directions perpendicular to the side-by-side direction may be higher than the thermal conductivity of the metal plate.
Abstract:
A semiconductor device, including: an intermediate plate; a semiconductor element connected to one of surfaces of the intermediate plate by a brazing filler metal; a main plate connected to the other one of the surfaces of the intermediate plate by a brazing filler metal; and a resin layer, the intermediate plate having an external region extending to an outer side with respect to a region in which the intermediate plate is connected to the brazing filler metal, a first through-hole extending through the intermediate plate in the external region, the resin layer covering at least the brazing filler metal, the intermediate plate and a surface of the main plate in which the main plate faces the intermediate plate, the resin layer being also arranged inside the first through-hole.
Abstract:
A semiconductor device 1 includes a thermal radiation member 4; a first semiconductor chip 21 connected to the thermal radiation member 4; a second semiconductor chip 22 connected to the thermal radiation member 4; and sealing resin 93 sealing the first semiconductor chip 21 and the second semiconductor chip 22. The semiconductor device 1 comprises a first thermal diffusion member 31 connected to the thermal radiation member 4; a second thermal diffusion member 32 connected to the thermal radiation member 4; and a cooler 5 configured to cool the first thermal diffusion member 31 and the second thermal diffusion member 32. A space between the first thermal diffusion member 31 and the second thermal diffusion member 32 is positioned to oppose a space between the first semiconductor chip 21 and the second semiconductor chip 22 via the thermal radiation member 4.