公开(公告)号：US11335656B2

公开(公告)日：2022-05-17

申请号：US17027175

申请日：2020-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chia Hu ,  Ching-Pin Yuan ,  Sung-Feng Yeh ,  Sen-Bor Jan ,  Ming-Fa Chen

IPC: H01L23/00 ,  H01L23/544 ,  H01L25/065 ,  H01L23/522

Abstract: A semiconductor device including a first die and a second die bonded to one another. The first die includes a first passivation layer over a substrate, and first bond pads in the first passivation layer. The second die includes a second passivation layer, which may be bonded to the first passivation layer, and second bond pads in the second passivation layer, which may be bonded to the first bond pads. The second bond pads include inner bond pads and outer bond pads. The outer bond pads may have a greater diameter than the inner bond pads as well as the first bond pads.

公开(公告)号：US20220278063A1

公开(公告)日：2022-09-01

申请号：US17745225

申请日：2022-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chia Hu ,  Ching-Pin Yuan ,  Sung-Feng Yeh ,  Sen-Bor Jan ,  Ming-Fa Chen

IPC: H01L23/00 ,  H01L23/544 ,  H01L25/065 ,  H01L23/522

Abstract: A semiconductor device including a first die and a second die bonded to one another. The first die includes a first passivation layer over a substrate, and first bond pads in the first passivation layer. The second die includes a second passivation layer, which may be bonded to the first passivation layer, and second bond pads in the second passivation layer, which may be bonded to the first bond pads. The second bond pads include inner bond pads and outer bond pads. The outer bond pads may have a greater diameter than the inner bond pads as well as the first bond pads.

公开(公告)号：US11916031B2

公开(公告)日：2024-02-27

申请号：US17745225

申请日：2022-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chia Hu ,  Ching-Pin Yuan ,  Sung-Feng Yeh ,  Sen-Bor Jan ,  Ming-Fa Chen

IPC: H01L23/00 ,  H01L23/544 ,  H01L25/065 ,  H01L23/522

CPC classification number: H01L24/06 ,  H01L23/522 ,  H01L23/544 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/80 ,  H01L25/0657 ,  H01L2223/54426 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05569 ,  H01L2224/0603 ,  H01L2224/0612 ,  H01L2224/06051 ,  H01L2224/06132 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/091 ,  H01L2224/0913 ,  H01L2224/09051 ,  H01L2224/8001 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80203 ,  H01L2224/80357 ,  H01L2224/80815 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80905 ,  H01L2224/80986 ,  H01L2924/3511 ,  H01L2224/091 ,  H01L2924/00012 ,  H01L2224/05555 ,  H01L2924/00012 ,  H01L2924/3511 ,  H01L2924/00

Abstract: A semiconductor device including a first die and a second die bonded to one another. The first die includes a first passivation layer over a substrate, and first bond pads in the first passivation layer. The second die includes a second passivation layer, which may be bonded to the first passivation layer, and second bond pads in the second passivation layer, which may be bonded to the first bond pads. The second bond pads include inner bond pads and outer bond pads. The outer bond pads may have a greater diameter than the inner bond pads as well as the first bond pads.

公开(公告)号：US20210005561A1

公开(公告)日：2021-01-07

申请号：US17027175

申请日：2020-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chia Hu ,  Ching-Pin Yuan ,  Sung-Feng Yeh ,  Sen-Bor Jan ,  Ming-Fa Chen

IPC: H01L23/00 ,  H01L23/544 ,  H01L25/065 ,  H01L23/522

Abstract: A semiconductor device including a first die and a second die bonded to one another. The first die includes a first passivation layer over a substrate, and first bond pads in the first passivation layer. The second die includes a second passivation layer, which may be bonded to the first passivation layer, and second bond pads in the second passivation layer, which may be bonded to the first bond pads. The second bond pads include inner bond pads and outer bond pads. The outer bond pads may have a greater diameter than the inner bond pads as well as the first bond pads.

公开(公告)号：US20170092626A1

公开(公告)日：2017-03-30

申请号：US14870006

申请日：2015-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Pin Yuan ,  Chen-Hua Yu ,  Ming-Fa Chen ,  Sung-Feng Yeh

IPC: H01L25/07 ,  H01L23/538

CPC classification number: H01L25/074 ,  G02B6/12002 ,  G02B6/4214 ,  G02B6/43 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/19 ,  H01L24/25 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/167 ,  H01L25/50 ,  H01L27/0688 ,  H01L31/12 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/18162

Abstract: Provided is a 3DIC structure including first and second IC chips and connectors. The first IC chip includes a first metallization structure, a first optical active component, and a first photonic interconnection layer. The second IC chip includes a second metallization structure, a second optical active component, and a second photonic interconnection layer. The first and second IC chips are bonded via the first and second photonic interconnection layers. The first optical active component is between the first photonic interconnection layer and the first metallization structure. The first optical active component and the first metallization structure are bonded to each other. The second optical active component is between the second photonic interconnection layer and the second metallization structure. The second optical active component and the second metallization structure are bonded to each other.

公开(公告)号：US09899355B2

公开(公告)日：2018-02-20

申请号：US14870006

申请日：2015-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Pin Yuan ,  Chen-Hua Yu ,  Ming-Fa Chen ,  Sung-Feng Yeh

IPC: G02B6/12 ,  G02B6/42 ,  G02B6/43 ,  H01L23/48 ,  H01L25/065 ,  H01L25/16 ,  H01L31/12 ,  H01L21/768 ,  H01L25/07 ,  H01L23/538 ,  H01L27/06 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L25/074 ,  G02B6/12002 ,  G02B6/4214 ,  G02B6/43 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/19 ,  H01L24/25 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/167 ,  H01L25/50 ,  H01L27/0688 ,  H01L31/12 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/18 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/18162

Abstract: Provided is a 3DIC structure including first and second IC chips and connectors. The first IC chip includes a first metallization structure, a first optical active component, and a first photonic interconnection layer. The second IC chip includes a second metallization structure, a second optical active component, and a second photonic interconnection layer. The first and second IC chips are bonded via the first and second photonic interconnection layers. The first optical active component is between the first photonic interconnection layer and the first metallization structure. The first optical active component and the first metallization structure are bonded to each other. The second optical active component is between the second photonic interconnection layer and the second metallization structure. The second optical active component and the second metallization structure are bonded to each other.