公开(公告)号：US20220375878A1

公开(公告)日：2022-11-24

申请号：US17881739

申请日：2022-08-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chia Hu ,  Chun-Chiang Kuo ,  Sen-Bor Jan ,  Ming-Fa Chen ,  Hsien-Wei Chen

IPC: H01L23/58 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

Abstract: A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.

公开(公告)号：US20240021544A1

公开(公告)日：2024-01-18

申请号：US18358343

申请日：2023-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chia Hu ,  Chun-Chiang Kuo ,  Sen-Bor Jan ,  Ming-Fa Chen ,  Hsien-Wei Chen

IPC: H01L23/58 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L23/585 ,  H01L23/5226 ,  H01L23/53295 ,  H01L29/0649 ,  H01L24/09 ,  H01L24/83 ,  H01L24/03 ,  H01L24/33 ,  H01L25/50 ,  H01L24/80 ,  H01L25/0657 ,  H01L23/562 ,  H01L2225/06568 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2224/94

Abstract: A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.

公开(公告)号：US20230378012A1

公开(公告)日：2023-11-23

申请号：US17896840

申请日：2022-08-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Der-Chyang Yeh ,  Chao-Wen Shih ,  Sung-Feng Yeh ,  Ta Hao Sung ,  Min-Chien Hsiao ,  Chun-Chiang Kuo ,  Tsung-Shu Lin

IPC: H01L23/31 ,  H01L21/56 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L25/10

CPC classification number: H01L23/3192 ,  H01L21/568 ,  H01L23/3185 ,  H01L25/0655 ,  H01L25/0652 ,  H01L25/50 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/20 ,  H01L25/105 ,  H01L24/19 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L24/06 ,  H01L2224/06181 ,  H01L2224/08145 ,  H01L2224/80201 ,  H01L2224/80896 ,  H01L2224/211 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1041 ,  H01L2224/19

Abstract: In an embodiment, a device includes: a first integrated circuit die; a second integrated circuit die; a gap-fill dielectric between a first sidewall of the first integrated circuit die and a second sidewall of the second integrated circuit die; a protective cap overlapping the gap-fill dielectric, the first sidewall of the first integrated circuit die, and the second sidewall of the second integrated circuit die; and an isolation layer around the protective cap, the isolation layer disposed on the first integrated circuit die, and the second integrated circuit die.

公开(公告)号：US11756901B2

公开(公告)日：2023-09-12

申请号：US17881739

申请日：2022-08-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chia Hu ,  Chun-Chiang Kuo ,  Sen-Bor Jan ,  Ming-Fa Chen ,  Hsien-Wei Chen

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/58 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L23/585 ,  H01L23/5226 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/09 ,  H01L24/33 ,  H01L24/80 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L29/0649 ,  H01L23/562 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06593 ,  H01L2224/94 ,  H01L2224/80

Abstract: A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.

公开(公告)号：US11482499B2

公开(公告)日：2022-10-25

申请号：US16989492

申请日：2020-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chia Hu ,  Chun-Chiang Kuo ,  Sen-Bor Jan ,  Ming-Fa Chen ,  Hsien-Wei Chen

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/58 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

Abstract: A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.

公开(公告)号：US20200373253A1

公开(公告)日：2020-11-26

申请号：US16989492

申请日：2020-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chia Hu ,  Chun-Chiang Kuo ,  Sen-Bor Jan ,  Ming-Fa Chen ,  Hsien-Wei Chen

IPC: H01L23/58 ,  H01L23/522 ,  H01L23/532 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L29/06

Abstract: A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.