公开(公告)号：US20180068967A1

公开(公告)日：2018-03-08

申请号：US15795547

申请日：2017-10-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Guo Lee ,  Yung-Sheng Liu ,  Yi-Chen Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/00

CPC classification number: H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05013 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/1411 ,  H01L2224/16058 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/00014

Abstract: A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.

公开(公告)号：US11217548B2

公开(公告)日：2022-01-04

申请号：US16219453

申请日：2018-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Guo Lee ,  Yung-Sheng Liu ,  Yi-Chen Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/00

Abstract: A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.

公开(公告)号：US10090267B2

公开(公告)日：2018-10-02

申请号：US14208744

申请日：2014-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Li-Guo Lee ,  Yung-Sheng Liu ,  Yi-Chen Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/00

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate and a metal pad formed over the first substrate. The semiconductor structure further includes a modified conductive pillar having a top portion and a bottom portion formed over the metal pad and a solder layer formed over the modified conductive pillar. In addition, the top portion of the modified conductive pillar has a first sidewall in a first direction and a bottom portion of the modified conductive pillar has a second sidewall in a second direction different from the first direction.

公开(公告)号：US09997482B2

公开(公告)日：2018-06-12

申请号：US14208675

申请日：2014-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Li-Guo Lee ,  Yi-Chen Liu ,  Yung-Sheng Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/52 ,  H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13017 ,  H01L2224/13139 ,  H01L2224/16058 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8183 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/01074 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01047 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate and a metal pad formed over the first substrate. The semiconductor structure further includes a solder stud formed over the metal pad, and the solder stud has a flat top surface parallel to a top surface of the first substrate.

公开(公告)号：US09806046B2

公开(公告)日：2017-10-31

申请号：US14208948

申请日：2014-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Li-Guo Lee ,  Yung-Sheng Liu ,  Yi-Chen Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/00

CPC classification number: H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05013 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13023 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/1411 ,  H01L2224/16058 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/00014

Abstract: A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.

公开(公告)号：US09779969B2

公开(公告)日：2017-10-03

申请号：US14209023

申请日：2014-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Li-Guo Lee ,  Yung-Sheng Liu ,  Yi-Chen Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/00 ,  H01L21/56

CPC classification number: H01L21/563 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0362 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1607 ,  H01L2224/16238 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/014

Abstract: A package structure and a manufacturing method are provided. The package structure includes a semiconductor substrate and a first conductive feature over the semiconductor substrate. The package structure also includes a substrate and a second conductive feature over the substrate. The second conductive feature is bonded with the first conductive feature through a bonding structure. The package structure further includes a protection material surrounding the bonding structure, and the protection material is in direct contact with a side surface of the first conductive feature.

公开(公告)号：US11145613B2

公开(公告)日：2021-10-12

申请号：US16124337

申请日：2018-09-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Guo Lee ,  Yung-Sheng Liu ,  Yi-Chen Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/00

Abstract: Methods for forming semiconductor structures are provided. The method for forming a semiconductor structure includes forming a metal pad over a first substrate and forming a resist layer having an opening over the metal layer. The method for forming a semiconductor structure further includes forming a conductive pillar and a solder layer over the conductive pillar in the opening of the resist layer and removing the resist layer. The method for forming a semiconductor structure further includes removing a portion of the conductive pillar so that the conductive pillar has an angled sidewall.

公开(公告)号：US20190131264A1

公开(公告)日：2019-05-02

申请号：US16219453

申请日：2018-12-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Guo Lee ,  Yung-Sheng Liu ,  Yi-Chen Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/00

Abstract: A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.

公开(公告)号：US10163843B2

公开(公告)日：2018-12-25

申请号：US15795547

申请日：2017-10-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Guo Lee ,  Yung-Sheng Liu ,  Yi-Chen Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/00

Abstract: A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature.

公开(公告)号：US09735123B2

公开(公告)日：2017-08-15

申请号：US14209118

申请日：2014-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Li-Guo Lee ,  Yi-Chen Liu ,  Yung-Sheng Liu ,  Yi-Jen Lai ,  Chun-Jen Chen ,  Hsi-Kuei Cheng

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L24/13 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11821 ,  H01L2224/11827 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13693 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/01074 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01079 ,  H01L2224/1182 ,  H01L2924/00012 ,  H01L2924/04953 ,  H01L2924/01047

Abstract: A semiconductor device structure and a manufacturing method are provided. The method includes forming a conductive pillar over a semiconductor substrate. The method also includes forming a solder layer over the conductive pillar. The method further includes forming a water-soluble flux over the solder layer. In addition, the method includes reflowing the solder layer to form a solder bump over the conductive pillar and form a sidewall protection layer over a sidewall of the conductive pillar during the solder layer is reflowed.